Matsushita Electric Industrial Co., Ltd.

Takanori Sugimoto

Kazuyoshi Honda

Masaru Odagiri

Noriyasu Echigo

Nobuki Sunagare

Yoshiaki Kai

Kazuo Iwaoka

Hisaaki Tachihara

Jun Katsube

Hideki Matsuda

Electrode layers () are arranged on both sides of a dielectric layer () facing each other so as to configure a capacitor. Lead electrodes () are formed in the electrode layers (). A penetrating electrode () that is insulated from the electrode layers () is formed. An electronic component () configured in this manner is mounted on a wiring board, and a semiconductor chip can be mounted thereon. Along with connecting the semiconductor chip to the wiring board via the penetrating electrode (), the semiconductor chip or the wiring board is connected to the lead electrodes (). In this manner, while suppressing the size increase of a mounted area, the capacitor or the like can be arranged near the semiconductor chip. Thus, the semiconductor chip is driven with high frequency more easily.

Method for fabricating semiconductor component

The present invention provides a bis(4-mercaptophenyl) sulfide derivative represented by general formula 1. This derivative is a monomer that can form a dielectric film suitable for an electronic component. The present invention further provides a method for producing this derivative and an electronic component having high characteristics under excellent humidity and high temperature.

Capacitor comprising bis(4-mercaptophenyl) sulfide derivative

Electrode layers ( ) are arranged on both sides of a dielectric layer ( ) facing each other so as to configure a capacitor. Lead electrodes ( ) are formed in the electrode layers ( ). A penetrating electrode ( ) that is insulated from the electrode layers ( ) is formed. An electronic component ( ) configured in this manner is mounted on a wiring board, and a semiconductor chip can be mounted thereon. Along with connecting the semiconductor chip to the wiring board via the penetrating electrode ( ), the semiconductor chip or the wiring board is connected to the lead electrodes ( ). In this manner, while suppressing the size increase of a mounted area, the capacitor or the like can be arranged near the semiconductor chip. Thus, the semiconductor chip is driven with high frequency more easily.

Electronic device and manufacture thereof

Growing community of inventors

Matsue, Japan

Takanori Sugimoto