Tokyo Electron Limited

Sony Corporation

Fujifilm Corporation

Fuji Photo Film Company, Limited

Imation Corporation

Takanori Sato

Kazuki Narishige

Manabu Sato

Takahito Miyoshi

Kazunari Motohashi

Masaaki Otoshi

Fumitaka Terai

Kazuto Ogawa

Yasuo Nishikawa

Takayuki Katsunuma

Richard W Molstad

Kenji Matsumoto

Fumiyuki Suzuki

Yoshisada Nakamura

Hideyuki Karaki

Masahiro Ogasawara

Hiroyuki Hiiro

Tadahiro Kegasawa

Hidetoshi Honda

Kazuo Ozaki

Yasuyuki Hosono

Masafumi Urakawa

Sugihiko Tada

Hiroshi Uchiyama

Hiroki Takahashi

Yukio Shirokura

Akifumi Kato

Hideki Takaki

Seiichi Onodera

Manabu Hashigaya

Seiichi Watanabe

Tadashi Ueda

Tatsuya Nomura

Tetsuo Samoto

Tim T Ngo

Naoki Ikeda

Naoki Honda

Hotaka Maruyama

Hiroko Sugihara

Daizo Shiga

Takahiro Sakamoto

Gaku Shimoda

There is provided an applicator that applies a coating liquid onto the upper surface of a web, and an application method which are capable of sufficiently enhancing the evenness of a coating surface. The applicator includes: a bar which rotates while coming into contact with the upper surface of the continuously travelling web via the coating liquid; and a barrier plate which is provided on an upstream side of the bar in a travelling direction of the web and allows the coating liquid to flow in a direction toward the web between the barrier plate and the bar, in which, when a distance between the barrier plate and an end edge portion of the bar, which is closest to the barrier plate, is referred to as A and a distance between the barrier plate and the web is referred to as B, A is 0.5 mm to 5 mm, B is 0.5 mm to 5 mm, and B&#x2264;A is satisfied.

Applicator and application method

A method for etching a silicon film formed on a substrate includes supplying HBr gas, NFgas, and Ogas into a chamber and performing a plurality of etching processes on the silicon film with a plasma generated by the supplied HBr gas, NFgas, and Ogas, gradually reducing a flow rate of the HBr gas during the plurality of etching processes, and adjusting a flow rate of the Ogas according to the reduction of the HBr gas.

Etching method and etching apparatus

In a semiconductor device manufacturing method, a target object including a multilayer film and a mask formed on the multilayer film is prepared in a processing chamber of a plasma processing apparatus. The multilayer film is formed by alternately stacking a silicon oxide film and a silicon nitride film. The multilayer film is etched by supplying a processing gas containing hydrogen gas, hydrogen bromide gas, nitrogen trifluoride gas and at least one of hydrocarbon gas, fluorohydrocarbon gas and fluorocarbon gas into the processing chamber of the plasma processing apparatus and generating a plasma of the processing gas in the processing chamber.

Semiconductor device manufacturing method

Plasma etching is performed while suppressing bowing during etching of a multi-layer film. The plasma etching is performed multiple times using a processing gas containing HBr gas and CFgas, and the etching gradually forms recesses from a SiN layer through a laminated film. By adding a gas containing boron to the processing gas during the etching at a predetermined timing and at a predetermined flow ratio while etching the laminated film, a protective film is formed on side walls of the SiN layer that are exposed to the recess.

Plasma processing method and plasma processing apparatus

A plasma processing method is provided for etching a multilayer film having a first film and a second film with differing dielectric constants alternatingly stacked on a substrate, and forming a hole with a predetermined shape in the multilayer film. The plasma processing method includes a first step of etching the multilayer film to a first depth using a gas mixture containing a CF based gas at a first flow rate and a bromine-containing gas, a chloride-containing gas, and/or an iodine-containing gas; a second step of etching the multilayer film to a second depth after the first step using a gas mixture containing the CF based gas at a second flow rate and the bromine-containing gas, the chloride-containing gas, and/or the iodine-containing gas; and a third step for over etching the multilayer film after the second step until the hole reaches a base layer.

Plasma processing method

A semiconductor device manufacturing method for etching a substrate having a multilayer film formed by alternately stacking a first film and a second film, and a photoresist layer to form a step-shaped structure is provided. The step-shaped structure is formed by repeatedly performing a first step of plasma-etching the first film by using the photoresist layer as a mask, a second step of exposing the photoresist layer formed on the substrate to a plasma generated from a processing gas containing argon gas and hydrogen gas by applying a high frequency power to a lower electrode while applying a negative DC voltage to an upper electrode, a third step of trimming the photoresist layer, and a fourth step of plasma-etching the second film.

Semiconductor device manufacturing method and computer-readable storage medium

There is provided a semiconductor device manufacturing method for forming a step-shaped structure in a substrate by etching the substrate having thereon a multilayer film and a photoresist film on the multilayer film and serving as an etching mask. The multilayer film is formed by alternately layering a first film having a first permittivity and a second film having a second permittivity different from the first permittivity. The method includes a first process for plasma-etching the first film by using the photoresist film as a mask; a second process for exposing the photoresist film to hydrogen-containing plasma; a third process for trimming the photoresist film; and a fourth process for etching the second film by using the trimmed photoresist film and the plasma-etched first film as a mask. The step-shaped structure is formed in the multilayer film by repeatedly performing the first process to the fourth process in this sequence.

A magnetic recording medium includes a tape-shaped nonmagnetic support, and a vertical magnetic layer formed on a main surface of the nonmagnetic support by a vacuum thin-film forming technique, signals being recorded on and reproduced from the vertical magnetic layer in a linear system. In the magnetic recording medium, the dipulse ratio of the vertical recording layer is 0.36 or more.

Magnetic recording medium and magnetic recording/reproducing system

A method for producing a solid-state imaging device, which including: a photoelectric conversion section; a charge transfer section having a charge transfer electrode; and an antireflection film covering a light-receiving region in the photoelectric conversion section, wherein forming the antireflection film includes: forming a sidewall on a lateral wall of the charge transfer electrode after forming the charge transfer electrode; forming an antireflection film on a substrate surface where the sidewall is formed; forming a resist on the antireflection film; melting and flattening the resist to expose the antireflection film on the charge transfer electrode; removing the antireflection film by using the resist as the mask; removing the sidewall; covering the charge transfer electrode with an insulating film; and forming a light-shielding film that reaches a level lower than the top surface of the antireflection film, and that surrounds the periphery of the antireflection film.

Solid-state imaging device and method for producing the same

A method is provided for manufacturing a wide band retardation plate which gives uniform phase difference characteristics to incident light over the whole visible wavelength region, and which, as it permits selection of raw materials regardless of whether they have a positive or negative intrinsic double refraction value, allows a wide selection of raw materials. For this purpose, the method comprises a machine direction-stretched film-forming step for transporting and stretching in an identical direction to the transport direction, a Material A of two or more materials having different positive intrinsic double refraction values to form a machine direction-stretched film, a transverse direction-stretched film-forming step for transporting and stretching in a perpendicular direction to the transport direction, a Material B of the aforesaid two or more materials to form a transverse direction-stretched film, and a lamination step for laminating the machine direction-stretched film and the transverse direction-stretched film.

Retardation plate and its manufacturing method, circularly polarizing plate and 1/2 wave plate using same, and a reflective liquid crystal display

In a helical scanning tape system including a magnetoresistive head; and a magnetic recording medium having a magnetic layer formed by oblique evaporation on a long nonmagnetic support, a signal being read with the magnetoresistive head by helical scanning, the track width of the magnetoresistive head is 0.5 to 0.8 &#x3bc;m, the distance between shields is 0.13 to 0.145 &#x3bc;m, and sensitivity is 1,862 &#x3bc;Vp-p or more.

Helical scan tape system with particular distance between MR element and shield layers

A preform () having a clad part of PVDF and a core part of PMMA is manufactured. The preform () is partially heated in a heating furnace () of 240&#xb0; C. The preform () is subject to the melt-drawing process to form a plastic optical fiber (). The drawing tension to the preform () is measured by use of a drawing tension measure device (). Based on the measured value, a drawing roller pair () adjusts the drawing tension to be 3.8 MPa. The plastic optical fiber () is fed via a dancer roller () and rollers () toward a bobbin () to wind the plastic optical fiber (). A winding tension measure device () measures the winding tension to the POF (). Based on the measured value, the dancer roller () changes its position to adjust the winding tension to be 2.5 MPa.

Plastic optical fiber and method for manufacturing the same

A plastic optical fiber () has a core () and a clad (). The clad () is composed of an outer clad () and an inner clad (). The refractive index in the core () gradually increases as the distance from the center thereof decreases. The refractive index in the inner clad () is equal to the minimum value of the refractive index in the core (), and the refractive index in the outer clad () is smaller than that in the inner clad (). For the purpose of decreasing the transmission loss between the plastic optical fiber () and a light emission device or the light receiving device, the diameter dof the core () and the outer diameter dof the inner clad () satisfy the following conditions;100(&#x3bc;m)&#x2266;&#x2266;700(&#x3bc;m)200(&#x3bc;m)&#x2266;&#x2266;1000(&#x3bc;m)d&#x3c;d

Optical connection method and optical transmission apparatus

A lower magnetic layer magnetized and formed in a first direction and an upper magnetic layer magnetized and formed in a second direction opposite to the lower magnetic layer are laminated on a base. A ratio T/Tof a thickness Tof the upper magnetic layer to a thickness Tof the lower magnetic layer is located within a range of 0.6 to 0.9. Thus, in a herringbone type dual evaporated tape in which data is recorded and reproduced in a serpentine fashion, a vertical magnetization component is canceled to reduce the difference in the waveform distortion of a reproducing signal between a forward direction and a reverse direction.

Evaporation type magnetic recording medium and magnetic recording and reproducing device

Growing community of inventors

Miyagi, Japan

Takanori Sato