Renesas Electronics Corporation

Takanori Okita

Shinji Baba

Kazuyuki Nakagawa

Toshihiro Iwasaki

Michitaka Kimura

Takeumi Kato

Katsuhito Kamachi

Yoshikazu Shimote

Masahiko Sekihara

The joint reliability in flip chip bonding of a semiconductor device is enhanced. Prior to flip chip bonding, fluxis applied to the solder bumpsfor flip chip bonding over a substrate and reflow/cleaning is carried out and then flip chip bonding is carried out. This makes is possible to thin the oxide film over the surfaces of the solder bumpsand make the oxide film uniform. As a result, it is possible to suppress the production of local solder protrusions to reduce the production of solder bridges during flip chip bonding and enhance the joint reliability in the flip chip bonding of the semiconductor device.

Semiconductor device and manufacturing method therefor

A manufacturing yield of a semiconductor device including a power transistor is improved. When forming a tip portion LEof a first lead, a tip portion LEof a second lead, and a tip portion LEof a third lead by using a spanking die SDM, the tip portion LEof the first lead, the tip portion LEof the second lead, and the tip portion LEof the third lead are pressed by an upper surface of a protrusion portion provided on a pressing surface of a lower die SDand a bottom surface of a groove portion provided in a pressing surface of an upper die SU, and a bent portion of the second lead and a bent portion of the third lead are pressed by a flat pressing surface of the lower die SDand a flat pressing surface of the upper die SU

Manufacturing method of semiconductor device

A risk of an electrical short between electrode pads of a semiconductor device can be reduced to thereby improve quality of the semiconductor device. During ball bonding in wire bonding, in each of the electrode pads of a semiconductor chip which are arrayed along an ultrasonic wave application direction (ultrasonic vibration direction), a ball at the tip of a copper wire and the electrode pad are coupled to each other while being rubbed against each other in a direction intersecting the ultrasonic wave application direction. Thus, the amount of AL splash formed on the electrode pad can be minimized to make the AL splash smaller. As a result, the quality of the semiconductor device assembled by the above-mentioned ball bonding can be improved.

Ultrasonic wire bonding method for a semiconductor device

Growing community of inventors

Kanagawa, Japan

Takanori Okita