Tokyo Electron Limited

Octec, Inc.

Takanori Nishi

Takahiro Kitano

Makoto Muramatsu

Gen You

Tadatoshi Tomita

Katsuya Okumura

Koukichi Hiroshiro

Shoichi Terada

Shinichiro Kawakami

Eiichi Shirakawa

Shouichi Terada

Takashi Yamauchi

Hisashi Genjima

Hiroyuki Fujii

A substrate treatment method using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer includes a polymer separating step, wherein a ratio of a molecular weight of the hydrophilic polymer in the block copolymer is adjusted to 20% to 40% so that the hydrophilic polymers align at positions corresponding to a hexagonal close-packed structure in a plan view after the polymer separating step, and at the polymer separating step, a columnar first hydrophilic polymer is phase-separated on each of circular patterns of hydrophobic coating films and a columnar second hydrophilic polymer is phase-separated between the first hydrophilic polymers, and a diameter of the circular pattern is set so that the first hydrophilic polymers and the second hydrophilic polymers align at positions corresponding to the hexagonal close-packed structure in a plan view.

Substrate treatment method, computer storage medium and substrate treatment system

A substrate treatment method includes: a polymer separation step of phase-separating a block copolymer into a hydrophilic polymer and a hydrophobic polymer; and a polymer removal step of selectively removing the hydrophilic polymer from the phase-separated block copolymer, wherein in the polymer removal step, the hydrophilic polymer is removed by: irradiating the phase-separated block copolymer with an energy ray; then supplying a first polar organic solvent having a first degree of dissolving the hydrophilic polymer, being lower in boiling point than water and capable of dissolving water, and not dissolving the hydrophobic polymer, to the block copolymer; and then supplying a second polar organic solvent having a second dissolving degree lower than the first dissolving degree, being higher in boiling point than water, and not dissolving the hydrophobic polymer, to the block copolymer.

A substrate treatment method includes: forming a plurality of circular patterns of a resist film on a substrate; thereafter applying a first block copolymer; then phase-separating the first block copolymer into a hydrophilic polymer and a hydrophobic polymer; thereafter selectively removing the hydrophilic polymer; then selectively removing the resist film from a top of the substrate; thereafter applying a second block copolymer to the substrate; then phase-separating the second block copolymer into a hydrophilic polymer and a hydrophobic polymer; and thereafter selectively removing the hydrophilic polymer from the phase-separated second block copolymer. A ratio of a molecular weight of the hydrophilic polymer in the first block copolymer and the second block copolymer is 20% to 40%.

Substrate treatment method, computer readable storage medium and substrate treatment system

In a template treatment of forming a film of a release agent on a treatment surface of a template, the treatment surface of the template is first cleaned. Thereafter, in a coating unit, the release agent is applied to the treatment surface of the template. The release agent on the template is then dried. Then, alcohol is applied to the release agent on the template to make the release agent adhere to the treatment surface of the template and to remove an unreacted portion of the release agent. Thereafter, the alcohol on the template is dried and removed. In this manner, a film of the release agent is formed in a predetermined film thickness on the treatment surface of the template.

Template treatment method, program, computer storage medium, template treatment apparatus and imprint system

The present invention provides a method for applying an application liquid between a template and a substrate, and transferring the transfer pattern onto the application liquid. The template is inclinedly arranged with respect to the substrate in a manner that a first distance between a first end portion of the template and the substrate is a distance that causes a capillary action of the application liquid to occur, and a second distance between a second end portion of the template that opposes the first end portion and the substrate is a distance that does not cause the capillary action of the application liquid to occur. Thereafter, the application liquid is supplied from an outer side of the first end portion to the first end portion. Thereafter, the second end portion and the substrate are relatively moved so that the second distance becomes equal to the first distance.

Imprint method, computer storage medium and imprint apparatus

In the present invention, a coating solution containing polysilazane is applied to a substrate to form a coating film. Thereafter, an ultraviolet ray is applied to the coating film formed on the substrate to cut a molecular bond of polysilazane in the coating film. Then, the coating film in which the molecular bond of polysilazane has been cut is oxidized while the coating film is being heated. Then, the oxidized coating film is baked at a baking temperature equal to or higher than a heating temperature when the coating film is oxidized.

Substrate processing method and computer storage medium

A developing apparatus has a substrate holder to hold a substrate, a heater which is provided in a substrate holder, and heats a substrate on a substrate holder for processing a resist film by PEB, a cooler to cool a substrate on a substrate holder, a developing solution nozzle to supply a developing solution to a substrate on a substrate holder, and a controller to control a heater, a cooler and a developing nozzle.

Developing apparatus and developing method

A substrate processing apparatus for processing a substrate coated with a chemical amplification type resist and subjected to a light-exposure treatment comprises a substrate table on which is disposed a substrate, a heater for heating the substrate disposed on the substrate table, and an electric field forming mechanism for forming an electric field exerting force, which is directed toward the substrate, on the protons generated in the resist formed on the substrate disposed on the substrate table.

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Koshi, Japan

Takanori Nishi