Jsr Corporation

Takanori Nakano

Shin-ya Minegishi

Shin-ya Nakafuji

Makoto Sugiura

Kazuhiko Komura

Satoru Murakami

Kyoyu Yasuda

Yushi Matsumura

Shinya Nakafuji

Hiromitsu Nakashima

Kazuo Nakahara

Mitsuo Sato

A resist underlayer film-forming composition includes a polymer having a glass transition temperature (Tg) of 0 to 180&#xb0; C. The resist underlayer film-forming composition is used for a multilayer resist process. The multilayer resist process includes forming a silicon-based oxide film on a surface of a resist underlayer film, and subjecting the silicon-based oxide film to wet etching.

Resist underlayer film-forming composition, pattern-forming method and resist underlayer film

A composition for forming a resist underlayer film includes a polymer having a repeating unit represented by a following formula (1), and a solvent. Rrepresents a hydroxy group, or the like. n is an integer of 0 to 5. X represents a divalent hydrocarbon group having 1 to 20 carbon atoms or an alkanediyloxy group having 1 to 20 carbon atoms. m is an integer of 1 to 7. A sum of m and n is no greater than 7. Rrepresents a single bond or an alkanediyl group having 1 to 4 carbon atoms. Rrepresents an alicyclic group having 4 to 20 carbon atoms or an aryl group having 6 to 30 carbon atoms. A part or all of hydrogen atoms included in the alicyclic group or the aryl group represented by Rare unsubstituted or substituted. 

Composition for forming resist underlayer film and pattern-forming method

A pattern-forming method includes forming a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a base component, and a crosslinking agent. A content of hydrogen atom in the resist underlayer film is from 0 to 50 atom %. The crosslinking agent has a partial structure represented by a following general formula (i). X represents an oxygen atom, a sulfur atom, or &#x2014;NR&#x2014;. R represents a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or an aryl group having 6 to 30 carbon atoms. nis an integer from 1 to 6. Rrepresents a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or an aryl group having 6 to 30 carbon atoms. 

Pattern forming method

A resist underlayer film-forming composition includes a polymer including a structural unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of from 3000 to 10000, and a solvent. Each of Rto Rindependently represents a group shown by a formula (2), a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxycarbonyl group having 2 to 10 carbon atoms, an aryl group having 6 to 14 carbon atoms, or a glycidyl ether group having 3 to 6 carbon atoms, wherein at least one of Rto Rrepresents the group shown by the formula (2). 

Resist underlayer film-forming composition and method for forming pattern

A resist underlayer film-forming composition includes a polymer including a repeating unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and a solvent. Each of Rto Rindividually represent a group shown by the following formula (2) or the like. Rrepresents a single bond or the like. Rrepresents a hydrogen atom or the like. 

Resist underlayer film-forming composition

A pattern-forming method includes forming a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a base component, and a crosslinking agent. The crosslinking agent has a partial structure represented by a following general formula (i). X represents an oxygen atom, a sulfur atom, or &#x2014;NR&#x2014;. R represents a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or an aryl group having 6 to 30 carbon atoms. nis an integer from 1 to 6. Rrepresents a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or an aryl group having 6 to 30 carbon atoms. 

Pattern forming method and resist underlayer film-forming composition

A resist underlayer film-forming composition includes (A) a polymer that includes a repeating unit shown by a formula (1), and has a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and (B) a solvent, wherein Rto Rindividually represent a group shown by the following formula (2) or the like,&#x2014;O&#x2014;R&#x2261;R&#x2003;&#x2003;(2)wherein Rrepresents a single bond or the like, and Rrepresents a hydrogen atom or the like.

Composition for forming resist underlayer film and method for forming pattern

A radiation-sensitive resin composition includes a compound shown by a formula (1) in which Rrepresents a divalent hydrocarbon group having 1 to 20 carbon atoms and Rrepresents a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms, or Rand Rform a heterocyclic structure having 4 to 20 carbon atoms, Rrepresents a monovalent acid-dissociable group, n is an integer from 1 to 6, each of R, R, and Rrepresents one of an alkyl group having 1 to 4 carbon atoms and a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms, or Rrepresents one of an alkyl group having 1 to 4 carbon atoms and a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms and Rand Rform a divalent alicyclic hydrocarbon group having 4 to 20 carbon atoms. 

Growing community of inventors

Tokyo, Japan

Takanori Nakano