Honda Motor Co., Ltd.

Takanori Maebashi

Nobuaki Miyakawa

Nariaki Kuriyama

Yoshiya Fujiwara

Mitsumoto Kawai

Takahiro Kimura

An analytical cell includes a first substrate and a second substrate each having a through hole extending in a thickness direction thereof. The first substrate and the second substrate are partially overlapped with each other to form an overlapping portion. In the overlapping portion, a solid state joint is formed by solid state bonding of a first solid portion protruding from the first substrate and a second solid portion protruding from the second substrate, whereby the first substrate and the second substrate are spaced from each other by a predetermined distance, and joined together in a state where the first substrate and the second substrate are positioned to form an observation window. At the observation window, the through holes of the first substrate and the second substrate face each other, and an electron beam is transmitted through the observation window.

Analytical cell and method of producing the same

A sample holder includes an adapter attached to an adapter attaching part. An analysis target, e.g., analytical cell, has first electrical connection members. The adapter has second electrical connection members. The number of the first electrical connection members and the number of the second electrical connection members are the same. Further, the adapter has third electrical connection members, and the adapter attaching part has fourth electrical connection members. The number of the third electrical connection members and the number of the fourth electrical connection members are the same. For example, the third electrical connection members are six electrically conductive membranes, i.e., a first electrically conductive membrane to a sixth electrically conductive membrane. Among the six electrically conductive membranes, only the third electrically conductive membrane is not electrically connected to any of the second electrical connection members and the first electrical connection members.

Sample holder

Substrates forming an overlapping portion of an analytical cell have through holes each having a shape tapered from an outer surface of the substrate facing to outside of the overlapping portion toward an inner surface thereof facing to inside thereof. An observation window is formed between the through holes facing each other. In the overlapping portion, at least one of negative and positive electrode active materials is provided between transmission membranes of the observation window, and at least one pillar is provided between first and second positions. At the first position, edge portions of the through holes of the outer surfaces are face-to-face with each other. At the second position, edge portions of the through holes of the inner surfaces are face-to-face with each other. At least one spacer is further provided at a position shifted from the first position toward a circumferential edge of the overlapping portion.

Analytical cell

An analytical cell includes a first substrate with a first through hole formed therein, and a second substrate with first and second through holes formed therein. First and second solid portions protruding respectively from the first and second substrates are solid-state bonded together to form a solid state joint. By the solid state joint, the first and second substrates are joined together such that transmission membranes of the first and second substrates are mutually spaced by a predetermined distance, to form an overlapping portion. In the overlapping portion, an observation window is formed at a position where the first through holes face each other, and an accommodating part is formed between a lid member and the first substrate through the second through hole. One of negative and positive electrode active materials is provided in the accommodating part, and the other is provided between the transmission membranes of the observation window.

An analytical cell includes a first holder and a second holder. The first holder and the second holder each contain a substrate including a through-hole and a transmission membrane having an electron beam permeability. The through-hole is covered with the transmission membrane. The first holder and the second holder are stacked to form an overlapping portion such that the transmission membranes face toward each other. A negative electrode active material and a positive electrode active material, which are arranged at a distance from each other and are in contact, respectively, with an electrolytic solution, are connected electrically to a negative electrode collector and a positive electrode collector, respectively, in the overlapping portion. A lyophobic part having no affinity for the electrolytic solution is formed on at least one of the negative electrode collector and the positive electrode collector.

A through-hole interconnection structure for a semiconductor wafer, in which: the each wafer includes at least a first wafer and a second wafer electrically connected to the first wafer; an electrical signal connecting section of the second wafer is provided to protrude from a bonding surface of the second wafer, the bonding surface being bonded with the first wafer; and the electrical signal connecting section has a cross section with a curved line or two or more straight lines extending in different directions when the second wafer is seen along a cross section parallel to the bonding surface.

Through hole interconnection structure for semiconductor wafer

A deep isolation trench extending from the main surface of a substrate to a desired depth is formed on the substrate with an insulating film in buried in it to form a through isolation portion. Subsequently, after a MOSFET is formed on the main surface of the substrate, an interlayer insulating film is deposited on the main surface of the substrate. Then, a deep conduction trench extending from the upper surface of the interlayer insulating film to a depth within the thickness of the substrate is formed in a region surrounded by the through isolation potion. Subsequently, a conductive film is buried in the deep conduction trench to form through interconnect portion. Then, after the undersurface of the substrate is ground and polished to an extent not to expose the through isolation portion and the through interconnect portion, wet etching is performed to an extent to expose parts of the lower portion of each of the through isolation portion and the through interconnect portion.

Semiconductor device manufacturing method

A deep isolation trench extending from the main surface of a substrate to a desired depth is formed on the substrate with an insulating film in buried in it to form a through isolation portion. Subsequently, after a MOSFET is formed on the main surface of the substrate, an interlayer insulating film is deposited on the main surface of the substrate. Then, a deep conduction trench extending from the upper surface of the interlayer insulating film to a depth within the thickness of the substrate is formed in a region surrounded by the through isolation portion. Subsequently, a conductive film is buried in the deep conduction trench to form through interconnect portion. Then, after the undersurface of the substrate is ground and polished to an extent not to expose the through isolation portion and the through interconnect portion, wet etching is performed to an extent to expose parts of the lower portion of each of the through isolation portion and the through interconnect portion.

Semiconductor wafer

A semiconductor device has a plurality of wafers which are laminated to each other, wherein: each wafer comprises an lamination surface to which another wafer is laminated; the lamination surface is provided with an electric signal connecting portion that electrically connects to said another surface so as to form a semiconductor circuit; at least one of the electrical signal connecting portions facing each other is a protruding connection portion that protrudes from the lamination surface; and a reinforcing protruding portion that is insulated from the semiconductor circuit and is provided in an area where the protruding connection portion is not disposed on the lamination surface formed with the protruding connection portion so as to protrude from the lamination surface with a height equal to or larger than that of the protruding connection portion.

Semiconductor device and method of manufacturing semiconductor device

A semiconductor device has a plurality of wafers which are laminated to each other, wherein: each wafer includes an lamination surface to which another wafer is laminated and a substrate having an element formed thereon; the lamination surface is provided with an electric signal connecting portion that electrically connects to said another wafer so as to form a semiconductor circuit; at least one of the electrical signal connecting portions facing each other is a protruding connection portion that protrudes from a region which exposes the substrate on the lamination surface; and a reinforcing protruding portion that is insulated from the semiconductor circuit, and is formed of the same material as the substrate to protrude from the lamination surface with a height equal to the length of a gap between the lamination surfaces of wafers facing each other is provided in an area where the protruding connection portion is not disposed on the lamination surface formed with the protruding connection portion.

In this semiconductor device, connection parts between wafers are electrically insulated from each other, and a junction face shape of second electrical signal connection parts is larger than the shape of a positioning margin face that is formed by an outer shape when the periphery of a minimum junction face, which has half the area of a junction area of the first electrical signal connection part, is enclosed by a same width dimension as a positioning margin dimension between the first wafer and the second wafer.

Semiconductor device having an increased area of one of the opposing electrode parts for preventing generation of unconnected positions the electrodes on the bonded wafers

Growing community of inventors

Wako, Japan

Takanori Maebashi