Hosiden Corporation

Nippon Telegraph and Telephone Corporation

Takanobu Nakagawa

Yasuhiro Ukai

Tomihisa Sunata

Shigeo Aoki

Kinya Kato

Tsutomu Wada

Hiroshi Saito

Tadamichi Kawada

Nobuhiko Kakuda

Minoru Shibazaki

Shu Takeuchi

Kiyoshi Taruta

Masamichi Okamura

A transparent insulation film is formed on a glass substrate. Source and drain electrodes are formed on the transparent insulation film with their ends in spaced and opposing relation. The entire face of the substrate is treated with PH.sub.3 plasma to diffuse P atoms to form a doped surface layer. An a-Si semiconductor layer is formed on the doped surface layer so as to span a space between the source and drain electrodes with the opposite end portions of the semiconductor layer overlying those electrodes. A gate insulation film is formed on the semiconductor layer to extend all over the substrate. A gate electrode is formed of metal on the top of the gate insulation film 6 such that the opposite side edges of the gate electrode are recessed inwardly of the edges of the source and drain electrodes. An excimer laser beam is radiated against the face of the substrate with the gate electrode acting as a mask so that the laser-irradiated regions of the semiconductor layer comprise source and drain regions of n.sup.+ poly-Si.

Top gate thin-film transistor

Liquid crystal is encapsulated between two transparent substrates 16, 17. Pixel electrodes 13 are formed on the inner surface of the transparent substrate 17 in the form of a matrix while a common electrode 12 is formed on the inner surface of the transparent substrate 16. Each pixel electrode 13 is divided into subpixel electrodes 13.sub.1, 13.sub.2. The subpixel electrode 13.sub.1 is connected to the drain of a thin film transistor 21 formed adjacent the subpixel electrode to apply driving voltage to the electrode. The subpixel electrode 13.sub.2 is supplied with capacitance-divided driving voltage through a capacitor comprising the electrode 13.sub.1, and a control capacitor 15 connected thereto with an insulation layer 14 interposed therebetween. Each of the subpixel electrodes 13.sub.1, 13.sub.2 are divided into two domains on which are formed alignment layers 41a, 41b, 42a, 42b, in opposition to alignment layers 43a, 43b, 44a, 44b formed on the common electrode 12. One of the opposed alignment layers is adapted to impart to the liquid crystal a pretilt angle greater than the other alignment layer. One of a pair of adjacent orientating films in the same plane is adapted to impart to the liquid crystal a pretilt angle greater than the other orientating film.

Gray scale multi domain liquid crystal display panel having capacitive

In an active matrix structure for liquid crystal display elements which includes pixel electrodes arranged in a matrix form on a glass base plate, thin film transistors having their drains connected to the pixel electrodes, respectively, data lines each connected to sources of the thin film transistors of one column and gate lines connected to gates of the thin film transistors of one row, there are provided in the same plane a light blocking layer disposed opposite each of the thin film transistors across an insulating layer, a storage capacitance electrode disposed partly opposite each of the pixel electrodes across the insulating layer and storage capacitance lines for interconnecting the capacitance electrodes. The light blocking layers, the storage capacitance electrodes and the storage capacitance lines are formed of the same material and at the same time.

Active matrix structure for liquid crystal display elements wherein each

Growing community of inventors

Kobe, Japan

Takanobu Nakagawa