Tanaka Kikinzoku Kogyo K.k.

Tanaka Holdings Co., Ltd

Takanobu Miyashita

Yasuyuki Goto

Ryousuke Kushibiki

Masahiro Nishiura

Masahiro Aono

Toshiya Yamamoto

Takamichi Yamamoto

Kiyoshi Higuchi

Osamu Itoh

A process for producing a magnetron sputtering target includes: mixing and dispersing an oxide powder and a magnetic metal powder, the magnetic metal powder containing a ferromagnetic metal element, to obtain a magnetic powder mixture; mixing and dispersing an oxide powder and each of a plurality of non-magnetic metal powders, the plurality of non-magnetic metal powders containing the ferromagnetic metal element, the plurality of non-magnetic metal powders containing a different constituent element from each other or containing constituent elements at different ratios from each other, to obtain a plurality of non-magnetic powder mixtures; and mixing and dispersing the magnetic powder mixture and the plurality of non-magnetic powder mixtures to obtain a powder mixture for pressure sintering.

Magnetron sputtering target and process for producing the same

Provided is a magnetron sputtering target having a ferromagnetic metal element. This magnetron sputtering target includes: a magnetic phase containing the ferromagnetic metal element; a plurality of non-magnetic phases that each contain the ferromagnetic metal element and that are different in constituent elements or a content ratio of constituent elements; and an oxide phase. At least one of the plurality of non-magnetic phases is more finely interdispersed with the oxide phase than the magnetic phase.

Magnetron sputtering target and method for manufacturing the same

An FePt-based sputtering target contains Fe, Pt, and a metal oxide, and further contains one or more kinds of metal elements other than Fe and Pt, wherein the FePt-based sputtering target has a structure in which an FePt-based alloy phase and a metal oxide phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and less than 60 at % and the one or more kinds of metal elements in an amount of more than 0 at % and 20 at % or less with the balance being Fe and unavoidable impurities and with the total amount of Pt and the one or more kinds of metal elements being 60 at % or less, and wherein the metal oxide is contained in an amount of 20 vol % or more and 40 vol % or less based on the total amount of the target.

FePt-based sputtering target

A process for producing an FePt-based sputtering target includes adding C powder containing unavoidable impurities and metal oxide powder containing unavoidable impurities to FePt-based alloy powder containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities so that the C powder and the metal oxide powder are contained to satisfy:0&#x3c;&#x3b1;&#x2266;20;10&#x2266;&#x3b2;&#x3c;40; and20&#x2266;&#x3b1;+&#x3b2;&#x2266;40,

Process for producing FePt-based sputtering target

A process for producing an FePt-based sputtering target includes adding metal oxide powder containing unavoidable impurities to FePt-based alloy powder containing Pt in an amount of 40 at % or more and less than 60 at % and one or more kinds of metal elements other than Fe and Pt in an amount of more than 0 at % and 20 at % or less with the balance being Fe and unavoidable impurities and with a total amount of Pt and the one or more kinds of metal elements being 60 at % or less so that the metal oxide powder accounts for 20 vol % or more and 40 vol % or less of a total amount of the FePt-based alloy powder and the metal oxide powder, followed by mixing the FePt-based alloy powder and the metal oxide powder to produce a powder mixture.

An FePt&#x2014;C-based sputtering target contains Fe, Pt, and C and has a structure in which an FePt-based alloy phase and a C phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities. The content of C is 21 at % or more and 70 at % or less based on the total amount of the target.

FePt-C-based sputtering target and process for producing the same

An FePt-based sputtering target has a structure in which an FePt-based alloy phase, a C phase containing unavoidable impurities, and a metal oxide phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities, wherein C is contained in an amount of more than 0 vol % and 20 vol % or less based on the total amount of the target, the metal oxide is contained in an amount of 10 vol % or more and less than 40 vol % based on the total amount of the target, and the total content of C and the metal oxide is 20 vol % or more and 40 vol % or less based on the total amount of the target.

A magnetron sputtering target containing a ferromagnetic metal element includes a magnetic phase containing the ferromagnetic metal element; a plurality of non-magnetic phases containing the ferromagnetic metal element, the plurality of non-magnetic phases containing a different constituent element from each other or containing constituent elements at different ratios from each other; and an oxide phase. Regions of the magnetic phase and the plurality of non-magnetic phases are separated from each other by the oxide phase.

A sintering method with uniaxial pressing includes: a powder filling step of disposing a spent target in an inner space of a frame jig having the inner space piercing in a uniaxial direction, and filling the inner space with a raw material powder for a target to cover an erosion part side of the spent target with the raw material powder for a target, a cushioning-material disposition step of disposing a deformable cushioning material so that the raw material powder for a target with which the inner space has been filled in the powder filling step is sandwiched between the spent target and the deformable cushioning material; and a sintering step of pressing the raw material powder for a target with which the inner space has been filled and the spent target in the uniaxial direction through the cushioning material and sintering them.

Method for producing regenerated target

FePt&#x2014;C-based sputtering target and process for producing the same

A target consisting essentially of a CoCrPt-based metal or a CoCrPtRu-based metal, and one or more metal oxides selected from the group consisting of SiO, CrO, CoO, TiOand TaO, is heated in an upper crucible of a two-level crucible that includes the upper crucible with a through hole formed in a bottom surface, and a lower crucible disposed below the through hole. The target is heated at a temperature of from 1400 to 1790&#xb0; C. if the target does not contain both TiOand TaO. The target is heated at a temperature of from 1400 to 1630&#xb0; C. if the target contains TiObut does not contain TaO. The target is heated at a temperature of from 1400 to 1460&#xb0; C. if the target contains TaO. The metal thereby melted is caused to flow into the lower crucible, so that the metal is separated from the metal oxide.

Method for recovering metal from target and method for manufacturing target

In the method for recovering a metal from a target that contains a metal and a metal oxide, the target contains a sintered body of the metal oxide after being heated under a condition of melting the metal without melting or decomposing the metal oxide. The target is heated in an upper crucible of a two-level crucible that includes the upper crucible with a through hole-formed in a bottom surface thereof, and a lower crucible disposed below the through hole, the size of the through hole being set such that it does not allow the sintered body of the metal oxide contained in the target to pass therethrough, and the melted metal is caused to flow into the lower crucible, so that the metal is separated from the metal oxide.

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Tsukuba, Japan

Takanobu Miyashita