Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Kabushiki Kaisha Tobisha

Takanobu Kamakura

Ryota Kitagawa

Akira Fujimoto

Shinji Nunotani

Koji Asakawa

Kumi Masunaga

Kenji Nakamura

Tsutomu Nakanishi

Eishi Tsutsumi

Masaaki Ogawa

Yoshihiko Fuji

Yoichiro Kurita

Hideto Sugawara

Tatsuya Ohguro

Masayuki Sugiura

Yoshiaki Aizawa

Ryohei Nega

Yukio Watanabe

Takafumi Nakamura

Norihiko Tsuchiya

Masanobu Ogino

Youji Yamashita

Kazuhiro Tamura

Kenji Fujimoto

Yoshio Ariizumi

Tsuguo Uchino

Tsutomu Amai

Hiroaki Ootsuka

Takumi Komoto

Shinichi Sanda

Makoto Yamamura

Naoki Murakami

A semiconductor light-emitting device includes a GaAs (gallium arsenide) substrate of a cubic crystal, a light-emitting layer and a multi-semiconductor layer. The light-emitting layer being provided on the GaAs substrate. The light-emitting layer includes InGaAs (indium gallium arsenide) represented by a compositional formula InxGa1-xAs (0<x<1). The multi-semiconductor layer being provided on a front surface of the GaAs substrate between the GaAs substrate and the light-emitting layer. The multi-semiconductor layer is tilted with respect to a (100) plane of the cubic crystal. The multi-semiconductor layer includes a first layer and a second layer. The first and second layers are alternately stacked in a direction perpendicular to the front surface of the GaAs substrate. The first layer is different in composition from the second layer.

Semiconductor light-emitting device and photocoupler

An isolator includes a substrate; a first planar coil provided above the substrate and along a surface of the substrate; a first insulating portion on the first planar coil; a second planar coil on the first insulating portion; and a metal layer above the first insulating portion. The first planar coil, the second planar coil, and the metal layer are arranged in a first direction perpendicular to the surface of the substrate. The first planar coil and the second planar coil each having a center and an outer perimeter in a second direction along the surface of the substrate. A distance in the second direction from the center of the first planar coil to the outer perimeter of the first planar coil is less than a distance in the second direction from the center of the second planar coil to the outer perimeter of the second planar coil.

Isolator

An electronic device includes a substrate, a first insulating film on the substrate, a second insulating film on the first insulating film, first and second coils respectively in the first and second insulating films, first and second terminals, and first and second connection conductors. The first and second insulating films contact each other so that the first and second coils are magnetically coupled. The first insulating film includes a first non-contact portion not contacting the second insulating film. One of the first and second insulating films includes a second non-contact portion not contacting the first or second insulating film. The first terminal is provided on the first non-contact portion and electrically connected to the first coil. The second terminal is provided on the second non-contact portion and electrically connected to the second coil. The first and second connection conductors are connected to the first and second terminals, respectively.

Electronic device

According to one embodiment, an isolator includes first and second electrodes, first and second insulating portions, and a first dielectric portion. The first insulating portion is provided on the first electrode. The second electrode is provided on the first insulating portion. The second insulating portion is provided around the second electrode along a first plane perpendicular to a first direction. The second insulating portion contacts the second electrode. The first dielectric portion is provided between the first and second insulating portions. At least a portion of the first dielectric portion contacts the second electrode and is positioned around the second electrode along the first plane. A distance between a lower end of the second electrode and a first interface between the first dielectric portion and the second insulating portion is less than a distance between the first interface and an upper end of the second electrode.

A semiconductor light-emitting device includes first and second semiconductor layers and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer includes a compound semiconductor represented by a compositional formula AlGaAs (0&#x3c;X&#x3c;1). The first semiconductor layer has an n-type conductivity and includes a first impurity of the n-type. The first layer further includes carbon with a lower concentration than a concentration of the first impurity, and oxygen with a lower concentration than the concentration of the first impurity. The second semiconductor layer includes a compound semiconductor represented by a compositional formula AlYGa1-YAs (0&#x3c;Y&#x3c;1). The second semiconductor layer has a p-type conductivity and including a second impurity of the p-type. The second semiconductor layer further includes carbon with a concentration substantially equal to the carbon concentration in the first semiconductor layer.

Semiconductor light-emitting device

A semiconductor light-emitting element includes a semiconductor stacked body that includes a light emitting layer in which n well layers (where n is, for example, an integer of 1 to 10) formed of In(GaAl)As (0&#x3c;X&#x2266;0.2, 0&#x3c;y&#x3c;1), and (n+1) barrier layers formed of GaAlAs (0&#x3c;z&#x3c;1) and are alternately stacked with the well layer. The light emitting layer in some embodiments can emit light having a peak wavelength in a range of from 700 nm or more to 870 nm or less.

Semiconductor light-emitting element and optical coupling device

A semiconductor light emitting device includes a structural body, a first electrode layer, and a second electrode layer. The structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer includes a metal portion, plural first opening portions, and at least one second opening portion. The metal portion has a thickness of not less than 10 nanometers and not more than 200 nanometers along a direction from the first semiconductor layer toward the second semiconductor layer. The plural first opening portions each have a circle equivalent diameter of not less than 10 nanometers and not more than 1 micrometer. The at least one second opening portion has a circle equivalent diameter of more than 1 micrometer and not more than 30 micrometers.

Semiconductor light emitting device and method for manufacturing the same

According to one embodiment, a semiconductor light emitting device includes a structure, a first electrode layer, and a second electrode layer. The structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode layer is provided on the first semiconductor layer side of the structure. The first electrode layer is made of metal and contains a portion contacting the first semiconductor layer. The second electrode layer is provided on the second semiconductor layer side of the structure. The second electrode layer has a metal portion with a thickness of not less than 10 nanometers and not more than 50 nanometers, and a plurality of openings piercing the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers.

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion.

A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a light emitting layer, a second semiconductor layer, a third semiconductor layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions penetrate the metal portion and have an equivalent circle diameter of a shape of the opening portions. The light emitting layer is between the first semiconductor layer and the first electrode layer. The second semiconductor layer of a second conductivity type is between the light emitting layer and the first electrode layer. The third semiconductor layer of a second conductivity type is between the second semiconductor layer and the first electrode layer. The second electrode layer is connected to the first semiconductor layer.

According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.

A semiconductor light emitting device includes a structural body, a first electrode layer, an intermediate layer and a second electrode layer. The structural body includes a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer; the first electrode layer includes a metal portion and plural opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers. The intermediate layer is between the first and second semiconductor layers in ohmic contact with the second semiconductor layer. The second electrode layer is electrically connected to the first semiconductor layer.

Growing community of inventors

Fukuoka-ken, Japan

Takanobu Kamakura