Toshiba Memory Corporation

Takanobu Itoh

Takeshi Imamura

Kenichi Fujii

Osamu Matsuura

Hideki Inokuma

Genki Kawaguchi

Hideo Wada

Hajime Kaneko

Makoto Watanabe

Masanari Fujita

Seiichi Omoto

Kazumasa Ito

Ryota Nakanishi

Masanori Fujita

According to one embodiment, it includes a stacked body including N-number of layers (N is an integer of 2 or more) stacked on a semiconductor substrate, opening portions penetrating the stacked body in a stacking direction, columnar bodies respectively disposed in the opening portions, and a slit dividing M-number of layers (M is an integer of 1 or more and (N&#x2212;2) or less) of the stacked body in a horizontal direction from above, wherein the slit is formed with lateral surfaces respectively having a spatial periodicity in a horizontal plane.

Three-dimensional semiconductor memory device including slit with lateral surfaces having periodicity

A semiconductor manufacturing method according to an embodiment includes forming a first film on a semiconductor substrate. The semiconductor manufacturing method includes forming cavities in the first film. The semiconductor manufacturing method includes forming a second film inside the cavities by a CVD method using first gas containing a component of the second film, detecting a first time point at which the second film blocks openings of the cavities in forming the second film, and ending forming of the second film at a second time point at which a predetermined time has elapsed from the first time point.

Semiconductor manufacturing method and semiconductor manufacturing apparatus

Growing community of inventors

Yokkaichi, Japan

Takanobu Itoh