Tokyo Electron Limited

Tokyo Electron Limi Ted

Takanobu Hotta

Kensaku Narushima

Yasushi Aiba

Atsushi Matsumoto

Koji Maekawa

Hideaki Yamasaki

Kenji Suzuki

Nagayasu Hiramatsu

Takuya Kawaguchi

Tomohisa Maruyama

Toshio Takagi

Masayuki Moroi

Takashi Kakegawa

Masato Araki

Masayuki Nasu

Kouichi Sekido

Junya Miyahara

Kennan Mo

Hajime Yamanaka

There is provided a film forming method for forming a tungsten film, comprising: preparing a substrate; and forming a tungsten film on the substrate. A chlorine-containing tungsten film whose film stress is adjusted by chlorine concentration in the film is formed as at least a part of the tungsten film.

Film forming method and tungsten film

There is provided a stress reducing method comprising: preparing a film forming apparatus configured to form a tungsten film on a substrate in a chamber by supplying a tungsten raw material gas and a reducing gas into the chamber; and making at least a part of a tungsten film deposited on an in-chamber component into a chlorine-containing tungsten film whose film stress is reduced by adjusting a chlorine concentration, when performing pre-coating in the chamber and/or when forming the tungsten film on the substrate, using the tungsten raw material gas and the reducing gas.

Stress reducing method

A showerhead includes a shower plate, a base member in which a gas flow passage is provided, the base member fixing the shower plate, a plurality of gas supply members disposed in a gas diffusion space and connected to the gas flow passage, the gas diffusion space being formed between the shower plate and the base member, and a flow adjusting plate disposed in the gas diffusion space, the flow adjusting plate being disposed on an outer periphery on an outer side from the plurality of gas supply members.

Showerhead and substrate processing apparatus

There is provided a method of processing a substrate, the method including: providing the substrate on which a natural oxide film is formed; performing a pre-processing on the substrate such that the natural oxide film formed on the substrate is removed; and directly forming a tungsten film on the substrate by heating a stage on which the substrate is mounted to a predetermined temperature and supplying a tungsten chloride gas and a reduction gas to the substrate which has been subjected to the pre-processing.

Substrate processing method and film forming system

A method of controlling flow rate in a gas supply device for supplying a mixed gas containing a raw material gas, which is generated by vaporizing a raw material in a raw material container, and a carrier gas, includes: supplying the mixed gas at a predetermined target flow rate; acquiring a flow rate of the mixed gas when supplying the mixed gas; specifying a stable range of the flow rate of the mixed gas acquired when acquiring the flow rate; calculating a representative value of flow rates of the mixed gas in the stable range specified when specifying the stable range; and correcting the target flow rate based on the representative value calculated when calculating the representative value and the target flow rate.

Flow rate control method, flow rate control device, and film forming apparatus

A method of forming a tungsten film in a penetration portion provided in a film formed on a surface of a base so as to expose the surface of the base includes: forming a barrier metal film made of a nitride of a transition metal in the penetration portion such that the barrier metal film formed on the exposed surface of the base is thicker than the barrier metal film formed on a side wall of the penetration portion; and selectively forming the tungsten film on the exposed surface of the base by supplying a tungsten chloride gas and a reducing gas for reducing the tungsten chloride gas to the penetration portion.

Method of forming tungsten film and controller

There is provided a method of forming a tungsten nitride film on a substrate to be processed, including: forming a tungsten film by repeating a cycle of alternately supplying a tungsten chloride gas and a hydrogen-containing gas with a supply of a purge gas interposed between the supply of the tungsten chloride gas and the supply of the hydrogen-containing gas; and nitriding the tungsten film by supplying a nitrogen-containing gas.

Film forming method

There is provided a film forming method including: an etching step of etching a portion of a base film to reduce a film thickness of the base film by intermittently supplying a tungsten chloride gas into a processing container while performing a purging step in the course of the intermittent supply of the tungsten chloride gas, wherein the processing container accommodates a substrate, and the base film is formed on a surface of the substrate; and a film forming step of forming a tungsten film on the base film by alternately supplying the tungsten chloride gas and a reducing gas for reducing the tungsten chloride gas into the processing container while performing the purging step in the course of the alternate supply of the tungsten chloride gas and the reducing gas, wherein the film forming step occurs after the etching step.

Film forming method and film forming apparatus

There is provided a tungsten film forming method for forming a tungsten film on a target substrate disposed inside a chamber kept under a depressurized atmosphere and having a base film formed on a surface thereof, using a tungsten chloride gas as a tungsten raw material gas and a reducing gas for reducing the tungsten chloride gas, which includes: performing an SiHgas treatment with respect to the target substrate having the base film formed thereon by supplying an SiHgas into the chamber; and subsequently, forming the tungsten film by sequentially supplying the tungsten chloride gas and the reducing gas into the chamber while purging an interior of the chamber in the course of sequentially supplying the tungsten chloride gas and the reducing gas.

Tungsten film forming method and storage medium

There is provided a method for forming a metal film on a target substrate having a complex-shaped portion and a flat portion, the target substrate being loaded into a chamber which is maintained under a depressurized atmosphere, by sequentially supplying a metal chloride gas as a raw material gas and a reduction gas for reducing a metal chloride into the chamber while purging the chamber in the course of sequentially supplying the metal chloride gas and the reduction gas, the method including: forming a first metal film by supplying the metal chloride gas at a relatively low flow rate; and forming a second metal film by supply the metal chloride gas at a relatively high flow rate.

Method of forming metal film

There is provided a method of reducing stress in a metal film that is highly stressed, the method including: processing the metal film by supplying a metal chloride gas containing a metal of the metal film and a reduction gas for reducing the metal chloride gas onto the metal film; and forming a process film on the metal film to reduce stress in the metal film.

Method of reducing stress in metal film and metal film forming method

A gas supply mechanism of supplying a raw material gas obtained from a raw material of a solid state or a liquid state into a chamber configured to perform a film forming process on a workpiece is disclosed. The gas supply mechanism includes a gas supply controller configured to control a flow rate of a carrier gas by means of a flow rate controller, and to enable the carrier gas to flow while closing a material gas supply/shut-off valve to thereby increase internal pressures of a raw material container and a raw material gas supply pipe to be a high-pressure condition and then control the raw material gas supply/shut-off valve to be opened.

Gas supply mechanism, gas supplying method, film forming apparatus and film forming method using the same

In a method of forming a tungsten film, an initial tungsten film and a main tungsten film are formed on an underlying film of a substrate. The initial tungsten film is formed on the underlying film by sequentially supplying a tungsten chloride gas and a reduction gas into a chamber while supplying a purging gas between the supplies of the tungsten chloride gas and the reduction gas, or by simultaneously supplying the tungsten chloride gas and the reduction gas. The main tungsten film is formed on the initial tungsten film by sequentially supplying the tungsten chloride gas and the reduction gas into the chamber while purging an inside of the chamber between the supplies of the tungsten chloride gas and the reduction gas. A supply amount of the tungsten chloride gas in forming the initial film is smaller than that in forming the main tungsten film.

Method of forming tungsten film

A tungsten film forming method for forming a tungsten film on a surface of a target substrate by an ALD (atomic layer deposition) method comprises adding a reduction gas to allow an ALD reaction to mainly occur when a tungsten chloride gas is supplied. In the ALD method, the tungsten chloride gas as a tungsten source gas and the reduction gas for reducing the tungsten chloride gas are alternately supplied into a chamber which accommodates the target substrate and is maintained under a depressurized atmosphere, with a purge process for purging an inside of the chamber performed between the supply of the tungsten chloride gas and the supply of the reduction gas.

Tungsten film forming method

A tungsten film forming method includes: supplying a tungsten chloride gas as a source material of tungsten and a reducing gas towards a substrate to be processed under a depressurized atmosphere to cause reaction between the tungsten chloride gas and the reducing gas while heating the substrate to be processed, such that a main tungsten film is directly formed on a surface of the substrate to be processed without forming an initial tungsten film for nucleus generation.

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Nirasaki, Japan

Takanobu Hotta