Ngk Spark Plug Company, Limited

Takamichi Ogawa

Manabu Sato

Jun Otsuka

Seiji Ichiyanagi

Yasuhiko Inui

Hideo Tange

Kohei Mitsuya

Motoki Hotta

A first ceramic member and a second ceramic member are joined together at a lower joining temperature while reducing the loss of bond strength. A method for producing a semiconductor production device component includes a step of providing a first ceramic member including an AlN-based material, a step of providing a second ceramic member including an AlN-based material, and a step of joining the first ceramic member and the second ceramic member to each other by thermally pressing the first ceramic member and the second ceramic member to each other via a joint agent including EuO, GdOand AlOdisposed between the first ceramic member and the second ceramic member.

Method for producing semiconductor production device component, and semiconductor production device component

A semiconductor production device component includes a first ceramic member including an AlN-based material, a second ceramic member including an AlN-based material, and a joint layer disposed between the first ceramic member and the second ceramic member so as to join the first ceramic member and the second ceramic member to each other. The joint layer includes a composite oxide containing Gd and Al, and AlO, and is free from AlN.

Component for semiconductor production device, and production method of component for semiconductor production device

A dielectric structure including a metal foil, a dielectric layer and a conductor layer provided in this order, wherein the metal foil has a thickness of from 10 to 40 &#x3bc;m, the dielectric layer has a thickness of from 0.3 to 5 &#x3bc;m, and the conductor layer has a thickness of from 0.3 to 10 &#x3bc;m. The dielectric structure has plural vias which are separated from each other, and which penetrate through both of the dielectric layer and the conductor layer. The vias of the dielectric layer have different diameters which are in a range of from 100 to 300 &#x3bc;m, a diameter of each of the vias of the conductor layer is larger than a diameter of a corresponding via of the dielectric layer by 5 to 50 &#x3bc;m, and a minimum via pitch is from 100 to 350 &#x3bc;m.

Method of manufacturing a dielectric structure

Dielectric lamination structure, manufacturing method of a dielectric lamination structure, and wiring board including a dielectric lamination structure

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Nagoya, Japan

Takamichi Ogawa