Fujifilm Corporation

Fuji Photo Film Company, Limited

Fuji Xerox Co., Ltd.

Takamichi Fujii

Takayuki Naono

Yoshikazu Hishinuma

Takami Arakawa

Yukio Sakashita

Hiroshi Takeuchi

Hiroyuki Kawanishi

Kenichi Umeda

Hiroaki Sata

Yuuichi Okamoto

Akihiro Mukaiyama

Tsuyoshi Mita

Jeffrey Birkmeyer

Yasukazu Nihei

Naoki Murakami

Youming Li

Yasutoshi Hirabayashi

Mitsuru Sawano

Shinichiro Sonoda

Akinori Harada

Kenichi Nakagawa

Ryuji Tsukamoto

Hiroyuki Usami

Shuhei Hoshino

Takehiro Kasahara

Yoshinori Katoh

Yoshinori Kato

Yoshiki Morita

Atsushi Oosawa

Yukihiro Okuno

Ryosuke Ozawa

A piezoelectric element includes, in sequence, a substrate, a lower electrode layer, a growth control layer, a piezoelectric layer including, as a main component, a perovskite-type oxide containing lead and an upper electrode layer. The growth control layer includes a metal oxide represented by MNO, where M is composed of one or more metal elements capable of substituting in the perovskite-type oxide, 0<d<1, and when the electronegativity is X, 1.41X−1.05≤d≤A1·exp(−X/t1)+y0, where A1=1.68×10, t1=0.0306, and y0=0.59958.

Piezoelectric element

A method of manufacturing a power generation element includes a first step of disposing a support unit that supports a vibration unit in one end portion of the vibration unit in one direction, and disposing a weight unit in the other end portion of the vibration unit in the one direction in a substrate including the vibration unit capable of vibrating, a second step of disposing a piezoelectric unit that generates power due to vibration in a portion of the vibration unit on an opposite side from the support unit side in a thickness direction of the substrate after the support unit and the weight unit are disposed in the vibration unit, and a third step of extracting a power generation element from the substrate by cutting an outer edge of the vibration unit in the thickness direction of the substrate after the piezoelectric unit is disposed in the vibration unit.

Method of manufacturing power generation element, power generation element, and power generation apparatus

Provided are a piezoelectric element having high stability, which operates with high efficiency, and a method for manufacturing the piezoelectric element. The piezoelectric element () has a laminate structure in which a first electrode (), a first piezoelectric film (), a second electrode (), an adhesion layer (), an interlayer (), a third electrode (), a second piezoelectric film (), and a fourth electrode () are laminated in this order on a silicon substrate (). The interlayer () is formed of a material different from that of the second electrode () and has a thickness of 0.4 &#x3bc;m to 10 &#x3bc;m. A device having a diaphragm structure or a cantilever structure is formed by removing a part of the silicon substrate (). The respective layers (to) laminated on the silicon substrate () can be formed using a thin film formation method represented by a vapor phase epitaxial method.

Piezoelectric element and method for manufacturing piezoelectric element

A piezoelectric element is obtained using a method including: preparing a first structure; preparing a second structure; disposing a first facing electrode layer of the first structure to face a first surface of a vibration plate substrate and bonding the first structure to the first surface of the vibration plate substrate; processing the vibration plate substrate into a vibration plate by polishing or etching a second surface of the vibration plate substrate to which the first structure is bonded; preparing a laminate structure by disposing a second facing electrode layer of the second structure to face an exposed surface of the vibration plate and bonding the second structure to the vibration plate; and removing at least a part of a first silicon substrate of the first structure and a second silicon substrate of the second structure from the laminate structure.

Laminate structure, piezoelectric element, and method of manufacturing piezoelectric element

Provided is a pyroelectric sensor including: an Si substrate; a laminated portion in which a heat absorption layer formed of an inorganic material, a lower electrode, a piezoelectric film, and an upper electrode are laminated in this order from one surface side of the Si substrate on the one surface; and an optical filter that is provided at a position of the other surface of the Si substrate corresponding to the laminated portion and selectively transmits an infrared ray, in which an infrared ray incident to the laminated portion from the optical filter side through the Si substrate is sensed.

Pyroelectric sensor

The piezoelectric film includes a perovskite oxide which is represented by General Formula P,ABNbNiO&#x2003;&#x2003;General Formula Pwhere A contains at least Pb, B contains at least Zr and Ti, and x and y respectively satisfy 0.1&#x2264;x&#x2264;0.3 and 0&#x2264;y&#x2264;0.75x. Although standard values of &#x3b4; and z are &#x3b4;=0 and z=3, these values may deviate from the standard values in a range in which a perovskite structure is capable of being obtained.

Piezoelectric film, piezoelectric element, and liquid discharge apparatus

A piezoelectric film of the present invention is a piezoelectric film including a perovskite oxide represented by the following formula (P), in which crystal phases of the perovskite oxide include tetragonal crystals and rhombohedral crystals at a ratio that satisfies the following formula (1).A[(ZrTi)Nb]O&#x2003;&#x2003;(P)0.70&#x2264;rhombohedral crystals/(rhombohedral crystals+tetragonal crystals)&#x2264;0.95&#x2003;&#x2003; (1),

Piezoelectric film, production method thereof, piezoelectric element, and liquid discharge apparatus

In a method for etching a piezoelectric film and a manufacturing method thereof, a piezoelectric film is formed on a substrate on which a lower electrode is formed, a metal film having a thickness of 20 nm to 300 nm is formed, a patterned resist film is formed, the metal film is etched with a first etchant to which the piezoelectric film has etching resistance, and the piezoelectric film is etched with a second etchant to which the metal film has etching resistance.

Method for etching piezoelectric film and method for manufacturing piezoelectric element

A piezoelectric device, which has bipolar polarization-electric field (Pr-E) hysteresis characteristics of a piezoelectric material asymmetrically biased, when a first and second coercive electric fields respectively having smaller and larger absolute values are defined as Ec1 and Ec2 and a bias ratio of the coercive electric field is defined as [(Ec2+Ec1)/(Ec2&#x2212;Ec1)]&#xd7;100[%], includes a piezoelectric element unit including a piezoelectric body film whose bias ratio is 20% or more, the piezoelectric element unit operating with an electric field intensity smaller than that of the first coercive electric field. The piezoelectric device includes a refresh voltage applying circuit configured to apply a voltage to maintain operation performance of the relevant device, the voltage having an electric field intensity larger than the electric field intensity for operating the device and being equal to or less than three times |Ec1|, such that a polarized state of the piezoelectric body film is restored.

Piezoelectric device and method for using same

There is provided a field effect transistor having, on a substrate, at least a gate electrode, a gate insulating film, an active layer mainly containing an oxide semiconductor that contains at least one of In, Ga or Zn, a source electrode, and a drain electrode, the field effect transistor including: a heat diffusion layer, wherein, given that a thermal conductivity of the substrate is N(W/mK), a thermal conductivity of the heat diffusion layer is N(W/mK), a film thickness of the heat diffusion layer is T (mm), a planar opening ratio of the heat diffusion layer is R (0&#x2266;R&#x2266;1), and S=T&#xd7;R, the thermal conductivity Nof the substrate satisfies the condition N&#x3c;1.8, and the thermal conductivity Nof the heat diffusion layer satisfies the conditions N&#x3e;3.0&#xd7;S^(&#x2212;0.97&#xd7;e^(&#x2212;1.2&#xd7;N)) and N&#x2267;N.

Field-effect transistor

A piezoelectric device includes: a substrate; a first electrode which is layered over the substrate; a first piezoelectric film which is layered over the first electrode; a metal oxide film which is layered over the first piezoelectric film; a metal film which is layered over the metal oxide film; a second piezoelectric film which is layered over the metal film; and a second electrode which is layered over the second piezoelectric film.

Piezoelectric device and method of manufacturing piezoelectric device

The sputtering apparatus includes a vacuum vessel, a sputter electrode placed within the vacuum vessel to hold a target material to be sputtered, a radio frequency power source for applying radio frequency waves to the electrode, a substrate holder which is spaced from the electrode and on which a substrate is held, a thin film being to be deposited on the substrate from components of the target material, and an impedance adjusting circuit for adjusting a first impedance of the substrate holder. The impedance adjusting circuit has a first end directly set at a ground potential and has an impedance circuit which is adjustable for adjusting the first impedance, a second impedance of the impedance circuit is adjusted to thereby adjust the first impedance and, hence, a potential of the substrate.

Sputtering method and apparatus

Resonant transducer, method of producing the resonant transducer, and ultrasonic treatment tool including the resonant transducer

A method of manufacturing a micro structure, includes the steps of: preparing separate first and second substrates, the first substrate having a first surface on which a first structural body having a first height and a second structural body having a second height greater than the first height of the first structural body are arranged, the second substrate having a second surface; then placing the first and second substrates to cause the first and second surfaces to face each other across the first and second structural bodies; and then bonding the first and second substrates to each other while compressing the second structural body in a height direction thereof between the first and second surfaces to cause the second structural body to have a height defined by the first structural body.

Method of manufacturing micro structure, and substrate structure

A piezoelectric device includes: a substrate; a first electrode which is layered over the substrate; a first piezoelectric film which is layered over the first electrode; a metal oxide film which is layered over the first piezoelectric film; a metal film which is layered over the metal oxide film; a second piezoelectric film which is layered over the metal film; and a second electrode which is layered over the second piezoelectric film, wherein a polarizing direction of the first piezoelectric film and a polarizing direction of the second piezoelectric film are different from each other.

Growing community of inventors

Kanagawa-ken, Japan

Takamichi Fujii