Mitsubishi Gas Chemical Company, Inc.

Agency of Industrial Science and Technology

Takamasa Kawakami

Kazuhiro Ando

Rieko Nakano

Kansei Izaki

Masao Saito

Satoru Makinose

Yasuo Tanaka

Takashi Suzuki

Takeshi Koyama

Norio Sayama

Akira Mori

Ryuji Fujiura

Takeo Kanaoka

Masami Orisaku

Yasuhiro Shouji

Mamoru Onozawa

Yoshiaki Inoue

Koichi Niihara

Toshio Hidaka

Motoyuki Hosokawa

Akira Naito

Isamu Yoshino

Shigeru Murabayashi

Fumihiro Wakai

Kazuo Fujinami

Yasuharu Kodama

Yuko Murayama

Ryuji Fujira

Kaoru Sasagawa

Kouichi Hakkei

A process for producing a copper-clad laminate using a copper foil obtained by subjecting the surface of the copper foil to chemical oxidation thereby to form, on the surface, a fine roughness constituted by a copper oxide of a brown to black color and then reducing the copper oxide constituting the fine roughness in an atmosphere in which a reducing gas is present.

Process for producing copper clad laminate

A method of preserving an article which includes enclosing the article and an oxygen absorbent parcel in a container having gas-barrier properties and sealing the container. The parcel is formed by packing an oxygen absorbent composition with a gas permeable packing material, the oxygen absorbent composition containing an linear hydrocarbon polymer having one or more unsaturated groups or a mixture of the polymer with an unsaturated fatty acid compound, an oxidation promoter, a basic substance and an adsorption substance.

Method of preserving article with an oxygen absorbent composition

A process for producing a multilayered printed circuit board which comprises using, as an intermediate layer, an inner-layer board obtained by chemically oxidizing the surface of a copper foil constituting an outermost layer of an inner-layer board having a printed circuit formed in the copper foil, thereby to form on the surface a finely roughened layer constituted by a copper oxide of a brown to black color, and then reducing the copper oxide constituting the finely roughened layer in an atmosphere in which a reducing gas is present.

Process for producing multilayered printed board

A process for the production of a fine powder suitable for use in the fields of electronic materials, catalysts, powder metallurgy, pigments and adsorbens. The powder has a primary particle diameter of not more than 0.5 .mu.m, an average secondary aggregate particle diameter of not more than 10 .mu.m and a secondary aggregate particle specific surface area of 2 to 250 m.sup.2 /g, and is produced by a process comprising heating an organic acid metal salt in the presence of palladium, which lowers the thermal decomposition temperature of the salt, at a temperature elevation rate of 0.5.degree. to 20.degree.C./minute and thermally decomposing the organic acid metal salt in the presence of the palladium in the temperature range of not higher than 400.degree.C.

Process for the production of fine powder

There are disclosed in process for shaping ceramic composites which comprises shaping a sintered silicon nitride-silicon carbide composite material having a microstructure formed predominantly of equiaxed grains with an average grain size of 2 .mu.m or below and a silicon carbide content of 10-50% by volume, obtained by liquid-phase sintering, at least 40% by volume of the silicon nitride in the material being in the .beta.-phase, by superplastically deforming said material at a strain rate of 10.sup.-6 sec.sup.-1 to 10.sup.-1 sec.sup.-1 under application of tensile stress or compressive stress in a superplastic temperature region of 1400.degree.-1700.degree. C., and a process for shaping ceramic composites which comprises shaping said sintered composite material by superplastic deformation as described above and then heat-treating the shaped article obtained in a non-oxidizing atmosphere under normal or applied pressure at 1000.degree.-2300.degree. C.

Process for shaping ceramic composites

A sintered silicon nitride-silicon carbide composite material is provided comprising a matrix phase of silicon nitride and silicon carbide where silicon carbide grains having an average diameter of not more than 1 .mu.m are present at grain boundaries of silicon nitride grains and silicon carbide grains having a diameter of several nanometers to several hundred nanometers, typically not more than about 0.5 micrometers, are dispersed within the silicon nitride grains and a dispersion phase where (a) silicon carbide grains having an average diameter of 2 to 50 .mu.m and/or (b) silicon carbide whiskers having a short axis of 0.05 to 10 .mu.m and an aspect ratio of 5 to 300 are dispersed in the matrix phase. A process for the production of the composite material is also provided.

Silicon nitride-silicon carbide composite material and process for

Process for producing a copper plated resin article by forming a uniform copper coating having excellent adhesive strength on a fiber-reinforced or unreinforced thermoplastic or thermosetting resin article having a heat deformation temperature higher than 165.degree. C. The resin article is heated along with a source of copper formate under a reduced pressure or in a non-oxidative atmosphere to a temperature in the range above 165.degree. C. but lower than the heat deformation temperature of the resin article. The process makes it possible to produce a resin article having formed thereon a copper layer having an excellent adhesive strength by a very simple manner, and the resin article thus obtained can be used in various industrial fields.

Process of producing copper plated resin article

A process for producing a copper fine powder, which comprises thermally decomposing anhydrous copper formate in a solid phase in a non-oxidizing atmosphere at a temperature in the range of from 150.degree. to 300.degree. C., thereby yielding a copper fine powder having a primary particle diameter of from 0.2 to 1 .mu.m, a specific surface area of from 5 to 0.5 m.sup.2 /g and small agglomerating properties, said anhydrous copper formate being an anhydrous copper formate powder 90 wt % or more of which undergoes thermal decomposition within a temperature range of from 160.degree. to 200.degree. C. when the anhydrous copper formate powder is heated in a nitrogen or hydrogen gas atmosphere at a heating rate of 3.degree. C./min.

Process for producing copper fine powder

A process for producing copper formate, which comprises subjecting methyl formate to a liquid-phase hydrolysis reaction at a temperature from 60 to 85.degree. C. in the presence of copper carbonate.

Process for producing copper formate

A method for producing a copper film-formed molding is disclosed, comprising a coating a mixed solution containing at least one copper compound selected from copper hydroxide and organic acid copper salts and a polyhydric alcohol as essential components on the desired area of an article having a heat deflection temperature of at least 165.degree. C., and heating to a temperature of from 165.degree. C. to the heat deflection temperature of the article and maintaining at this temperature in a non-oxidizing atmosphere.

Method for producing copper film-formed articles

The invention relates to a sintered silicon nitride-silicon carbide composite material excellent in toughness and strength and to a process for producing the same. The present sintered composite material is substantially formed of silicon nitride predominantly in .beta.-phase and about 5 to 35% by weight of silicon carbide predominantly in .beta.-phase, which is characterized by the microstructure such that the silicon nitride is in the form of fine grains comprising elongated grains, 0.2 to 1.0 .mu.m in length of minor axis and 1 to 10 .mu.m in length of major axis, and equiaxed grains, 1 .mu.m or below in average size, and the silicon carbide is in the form of equiaxed grains, 1 .mu.m or below in average size, said silicon carbide grains being uniformly dispersed. Having a three-point flexural strength of at least 95 kg/mm.sup.2 and a fracture toughness (K.sub.IC) of at least 54 MN/m.sup.3/2, the present sintered material is excellent in toughness and strength. The process for producing such a material is disclosed in detail.

Fine silicon nitride powders, fine silicon carbide powders, or fine powdery mixture of silicon nitride and silicon carbide are prepared by vapor phase reaction of an aminosilane compound, a cyanosilane compound, a silazane compound, an alkoxysilane compound or a siloxane compound and heat treatment of the resulting fine powders in a non-oxidizing gas atmosphere.

Process for preparing silicon nitride, silicon carbide or fine powdery

Fine spherical amorphous powder represented by the general formula:

Fine amorphous powder and process for preparing fine powdery mixture of

Phthalonitrile is produced in a good yield by contacting a xylylenediamine condensate with an oxide catalyst of silica or alumina system in the presence of a molecular oxygen-containing gas or a mixture of a molecular oxygen-containing gas and ammonia.

Process for producing phthalonitrile

Aromatic nitriles can be produced at a high conversion and at a high selectivity by filling cylindrical wire netting into a fluidized bed reactor when the aromatic nitriles are produced by subjecting a mixture of an aromatic hydrocarbon, ammonia and molecular oxygen to fluid catalytic reaction in the presence of a fluid catalyst.

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Ibaraki, Japan

Takamasa Kawakami