Fuji Electric Co., Ltd.

Takamasa Ishikawa

Seiji Noguchi

Noriaki Yao

A method of manufacturing an insulated-gate semiconductor device, includes: digging a gate trench and a dummy trench; burying a dummy electrode in the dummy trench via a gate insulating film and burying a gate electrode in the gate trench via the gate insulating film; exposing an upper portion of the dummy electrode and selectively forming an insulating film for testing so as to cover the gate electrode; depositing a conductive film for testing on the dummy electrode and the insulating film for testing; and selectively testing an insulating property of the gate insulating film in the dummy trench by applying a voltage between the conductive film for testing and the charge transport, region.

Insulated-gate semiconductor device and method of manufacturing the same

A method of manufacturing an insulated-gate semiconductor device includes: digging a dummy trench and digging a gate trench so as to have a U-like shape in a planar pattern to surround the dummy trench into the U-like shape; forming a dummy electrode and a gate electrode in the dummy trench and the gate trench via a gate insulating film; forming a projection for testing connected to the dummy electrode via an opening of the U-like shape and a wiring layer for testing; and testing an insulating property of the gate insulating film in the dummy trench by applying a voltage between the wiring layer for testing and a charge transport region.

Growing community of inventors

Matsumoto, Japan

Takamasa Ishikawa