Pioneer Corporation

Rohm Co., Ltd.

Hitachi, Ltd.

Semiconductor Energy Laboratory Co., Ltd.

Kyoto University

Mitsubishi Chemical Corporation

Takahito Oyamada

Chihaya Adachi

Naoya Yuzuriha

Yoshiaki Yamamoto

Yasuhiro Takahashi

Haruo Tanaka

Taishi Tsuji

Takuya Hatakeyama

Hiroyuki Sasabe

Hiroyuki Uchiuzo

In an organic electroluminescence device (), a hole transport layer () is formed of a cured resin obtained by a ring opening polymerization of a polymerizable compound (a) containing a ring opening polymerizable group in the presence of a polymerization initiator (b). In addition, both of a maximum peak height Rp and a maximum valley depth Rv in an upper surface of the hole transport layer () are less than or equal to 14 nm. Accordingly, an organic electroluminescence device having excellent mass productivity and high luminescent efficiency is realized.

Organic electroluminescence device and manufacturing method thereof

A method for producing an organic electroluminescent panel having an organic layer formed by a coating step and a large aperture ratio includes: a first step of arraying and distributing a plurality of first electrodes on or above a substrate; a second step of forming stacking bodies each composed of a plurality of organic-emitting layer on the top face of each of the first electrodes; and a third step of forming organic electroluminescent elements by forming second electrodes respectively on or above the stacking bodies. In the first step, a conductive body having an angled edge portion forming a edge line surrounding the top face itself is used. The second step includes a step of supplying at least a liquid having a light-emitting organic material that is ejected from a nozzle and supplied in a fine flow shape to the organic layer on the top face.

Organic electroluminescent panel and method for producing the same

An organic semiconductor device includes, between a pair of electrodes of a first metal electrode and a second electrode, at least, a light-emitting layer, a hole injection layer which removes holes from the first metal electrode, a hole transporting layer formed on the light-emitting layer on a side of the first metal electrode for transporting the holes removed by the hole injection layer to the light-emitting layer, and an electron transporting layer formed on the light-emitting layer on a side of the second electrode for removing electrons from the second electrode and transporting the electrons to the light-emitting layer, wherein the organic semiconductor device further includes a crystallinity controlling member which is a series of discontinuous clusters along the contact surface of the hole injection layer that is in contact with the first metal electrode, for controlling an orientation of crystalline molecules.

Organic semiconductor device, organic solar cell, and display panel

An organic light-emitting device cutting off ambient light while keeping emission intensity includes a pair of first and second electrodes opposed to each other; and a plurality of organic semiconductor layers layered and disposed between the first and second electrodes, wherein the organic semiconductor layers include an organic light-emitting layer, the organic semiconductor device further comprising a light-scattering layer layered and disposed between the organic light-emitting layer and at least one of the first and second electrodes. The light-scattering layer includes: organic materials having carrier injection and transport characteristics of transporting electrons and/or holes; and plural particles dispersed among the organic materials so that light emitted from the organic light-emitting layer is passed therethrough.

Organic light-emitting device

An organic electroluminescence device includes a plurality of organic semiconductor layers including an organic light-emitting layer and layered or disposed between a pair of anode and cathode opposed to each other. The device includes n-type-dopant-containing electron transport layer disposed between the cathode and the organic light-emitting layer. The n-type-dopant-containing electron transport layer includes an organic compound capable of transporting electrons as a first component which mixed with an n-type dopant of an electron donor of metallic atom or ion thereof as a second component. The organic electroluminescence device further includes an n-type-dopant blocking layer having an interface contacting with the n-type-dopant-containing electron transport layer to block the n-type dopant. The n-type-dopant blocking layer includes a heavy atom compound including at least one kind of heavy atoms with an atomic weight of 79 or more.

Organic electroluminescence device

A light-emitting device includes a transparent or semitransparent first electrode, a second electrode that forms a pair with the first electrode and reflects light, and organic semiconductor layers, which include a photoelectric converting layer that emits light by recombining holes removed from one of the first electrode and the second electrode with electrons removed from the other of the first electrode and the second electrode, wherein the organic semiconductor layers include between the first electrode and the photoelectric converting layer a light extraction improving layer, which contains at least silver or gold in part as a component, partially reflects light, and has transparency.

Light-emitting element and display panel

An organic semiconductor light-emitting device having the form of a field-effect transistor and a display using this device is provided. In the device, electrons and holes can be transported. The device comprises an organic semiconductor light-emitting layer capable of emitting light by recombination of holes and electrons, a hole injection electrode for injecting holes into the organic semiconductor light-emitting layer, an electron injection electrode for injecting electrons into the organic semiconductor light-emitting layer, and a gate electrode so disposed as to be opposed to the organic semiconductor light-emitting layer between the electrodes. When a control voltage is applied to the gate electrode, the carrier distribution in the organic semiconductor light-emitting layer is controlled. Thus, the light emission can be turned on/off and the emission intensity can be modulated.

Organic semiconductor light-emitting device and display using same

An organic semiconductor device with a vertical structure having both functions of an organic thin film transistor and light-emitting element, where the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled in the case of forming a gate electrode with an organic conductive film, and a manufacturing method thereof. The above organic semiconductor device has such a structure that organic semiconductor films are sandwiched between a pair of electrodes functioning as a source electrode and drain electrode of an organic thin film transistor and also functioning as an anode and cathode of a light-emitting element, a thin organic conductive film functioning as a gate electrode is sandwiched between the organic semiconductor films, and a part of the organic conductive film is electrically connected to an auxiliary electrode, thereby the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled.

Organic semiconductor device

An organic semiconductor device includes organic semiconductor layers () and an electron injecting electrode () which is composed of MgAu alloy and injects electrons into the organic semiconductor layers (). The MgAu alloy forming the electron injecting electrode () may contain not more than 85 atom % of Au. The organic semiconductor device may further include a hole injecting electrode () for injecting holes into the organic semiconductor layers (). The electron injecting electrode and the hole injecting electrode are arranged apart from each other in such a manner that they fit to each other. The organic semiconductor device may further include a gate electrode which is arranged opposite, via an insulating film, to the region between the electron injecting electrode and the hole injecting electrode.

Organic semiconductor device and method for manufacturing same

The switching element has a switching layer between a first electrode layer and a second electrode layer. The switching layer includes a charge transfer complex containing an electron donor and an electron acceptor. An insulating layer is provided between the first electrode layer and the switching layer, and contacts the switching layer. The switching layer switches from a high-resistance state to a low-resistance state upon application of a voltage greater than a first threshold value in a first bias direction. Thereafter, the switching layer maintains the low-resistance state when the applied voltage decreases beyond the first threshold value. When the applied voltage becomes not smaller than a second threshold value in a second bias direction or a reverse direction to the first bias direction, the switching layer switches from the low-resistance state to the high-resistance state. Thereafter, the switching layer maintains the high-resistance state when the applied voltage decreases beyond the second threshold value.

Growing community of inventors

Kawasaki, Japan

Takahito Oyamada