Nuflare Technology, Inc.

Takahito Nakayama

Takanao Touya

Osamu Iizuka

Kenji Ohtoshi

Shunji Shinkawa

Hirofumi Morita

Rieko Nishimura

Yuji Abe

Taku Yamada

Hitoshi Sunaoshi

Nobuo Miyamoto

Satoshi Nakahashi

Ryoichi Kakehi

In one embodiment, a multi-charged-particle-beam writing method includes dividing a data path into a plurality of first blocks based on at least either one of each of a plurality of input/output circuits and a plurality of wiring groups, and calculating a first shift amount for multiple beams for each of the plurality of first blocks. The data path is for inputting control data to a cell array on a blanking aperture array substrate. The control data is for controlling ON/OFF of each beam of the multiple beams. Each of the plurality of wiring groups includes a plurality of pieces of wiring connected to the plurality of input/output circuits and grouped together based on inter-wiring distance. The first shift amount is due to at least one of an electric field and a magnetic field for each of the plurality of first blocks. An irradiation position or a dose of the multiple beams is corrected based on the first shift amount, and irradiation is performed.

Multi-charged-particle-beam writing method, multi-charged-particle-beam writing apparatus, and computer-readable recording medium

According to one embodiment, a charged particle beam writing apparatus includes, a writing mechanism, a writing control circuit, a deflection operation control circuit configured to generate control data for controlling the blanking of each of the charged particle beams based on the shot data, a storage, a blanking control circuit configured to control the blanking based on the control data, and a detector. The writing control circuit is configured to, when the detector detects the abnormality during the writing, interrupt the writing, and generate interrupt position information at a position where the writing is interrupted based on the shot data which has been stored at the storage and is related to the control data that has not been used for controlling the blanking.

Charged particle beam writing apparatus and charged particle beam writing method

An electron beam writing apparatus comprising, a cathode configured to emit an electron beam, a condition controller configured to change a condition under which the electron beam is emitted from the cathode in a plurality of ways, and a prediction unit configured to predict a life span of the cathode based on a temporal change in an amount of fluctuation of a beam characteristic of the electron beam to a change in the condition when the condition is changed.

Electron beam writing apparatus and cathode life span prediction method

A charged particle beam adjustment method includes scanning, with a charged particle beam an emission current of which is set to a first adjustment value smaller than a target value, an aperture substrate including a hole disposed to be a focus position of the charged particle beam using each of lens values in an electron lens and calculating first resolution, calculating a first function of lens values and the first resolution and calculating a lens value range, scanning, with the charged particle beam the emission current of which is set to a second adjustment value, the aperture substrate using each of lens values set to avoid the lens value range and calculating second resolution, calculating a second function of lens values and the second resolution and estimating a lens value at a just focus, and adjusting the electron lens to the lens value at the just focus.

Charged particle beam adjustment method, charged particle beam drawing method, and charged particle beam irradiation apparatus

A charged particle beam writing apparatus according to one aspect of the present invention includes an emission unit to emit a charged particle beam, an electron lens to converge the charged particle beam, a blanking deflector, arranged backward of the electron lens with respect to a direction of an optical axis, to deflect the charged particle beam in the case of performing a blanking control of switching between beam-on and beam-off, a blanking aperture member, arranged backward of the blanking deflector with respect to the direction of the optical axis, to block the charged particle beam having been deflected to be in a beam-off state, and a magnet coil, arranged in a center height position of the blanking deflector, to deflect the charged particle beam.

Charged particle beam writing apparatus, method of adjusting beam incident angle to target object surface, and charged particle beam writing method

A charged particle beam writing apparatus includes a writer writing a pattern on a surface of a substrate using a charged particle beam, a measurement unit measuring a height of the surface of a central portion of the substrate at a plurality of positions in the central portion, a generator performing fitting using a first polynomial on measurement values from the measurement unit, calculating, by extrapolation using the first polynomial, a first height distribution of the height of the surface of a peripheral portion of the substrate, performing fitting using a second polynomial, which is of a higher order than the first polynomial, on the measurement values, calculating a second height distribution of the height of the surface of the central portion by interpolation using the second polynomial, and generating a height distribution of the substrate by combining the first height distribution and the second height distribution, and a controller adjusting a focal position of the charged particle beam based on the height of the surface at a writing position, the height being calculated from the height distribution of the substrate.

In one embodiment, a charged particle beam writing apparatus includes a writer writing a pattern on a substrate placed on a stage by irradiating the substrate with a charged particle beam, a height detector detecting a surface height of a mark on the stage, an irradiation position detector detecting an irradiation position of the charged particle beam on the mark surface by irradiation with the charged particle beam focused at the surface height of the mark, a drift correction unit calculating an amount of drift of the charged particle beam on the mark surface from the irradiation position detected by the irradiation position detector, and generating correction information for correcting a shift in irradiation position caused by a drift on the substrate surface based on the amount of drift, and a writing control unit correcting the irradiation position of the charged particle beam by using the correction information.

A charged particle beam writing method includes acquiring the deviation amount of the deflection position per unit tracking deflection amount with respect to each tracking coefficient of a plurality of tracking coefficients having been set for adjusting the tracking amount to shift the deflection position of a charged particle beam on the writing target substrate in order to follow movement of the stage on which the writing target substrate is placed, extracting a tracking coefficient based on which the deviation amount of the deflection position per the unit tracking deflection amount is closest to zero among the plurality of tracking coefficients, and writing a pattern on the writing target substrate with the charged particle beam while performing tracking control in which the tracking amount has been adjusted using the tracking coefficient extracted.

Charged particle beam writing method and charged particle beam writing apparatus

In one embodiment, a charged particle beam writing apparatus includes a writer writing a pattern on a substrate on a stage with a charged particle beam, a mark substrate disposed on the stage and having a mark, an irradiation position detector detecting an irradiation position of the charged particle beam on a mark surface, a height detector detecting a surface height of the substrate and the mark substrate, a drift correction unit calculating an amount of drift correction, and a writing control unit correcting the irradiation position of the charged particle beam by using the amount of drift correction. The mark substrate has a pattern region with a plurality of marks and a non-pattern region with no pattern therein, and at least part of the non-pattern region is disposed between different portions of the pattern region. The height detector detects a height of a detection point in the non-pattern region.

In one embodiment, a charged particle beam writing apparatus includes a blanking circuit applying a blanking voltage to a blanking deflector, a stage on which a substrate is placed, a mark on the stage, a detector detecting an irradiation position of the charged particle beam based on irradiation of the mark with the charged particle beam, and a diagnostic electric circuitry that causes the charged particle beam to enter a predetermined defocused state relative to the mark, obtains a difference between a first irradiation position when the mark is scanned under first irradiation conditions and a second irradiation position when the mark is scanned under second irradiation conditions in which at least either of irradiation time and settling time in the first irradiation conditions is varied, and determines occurrence of a failure of the blanking circuit when the difference is a predetermined value or more.

Charged particle beam writing apparatus and method for diagnosing failure of blanking circuit

An electron beam writing apparatus comprising a stage that a sample is placed on, an electron optical column, an electron gun emitting an electron beam disposed in the optical column, an electrostatic lens provided with electrodes aligned in an axial direction of the electron beam disposed in the optical column, and a voltage supply device for applying positive voltage constantly to the electrostatic lens. A shield plate is disposed between the XY stage and the electron optical column to block reflected electrons or secondary electrons generated by irradiation to the sample with the electron beam. The electrostatic lens is disposed immediately above the shield plate to change a focal position of the electron beam. A voltage supply device applies a positive voltage constantly to the electrostatic lens.

Electron beam writing apparatus and electron beam writing method

An electron beam writing apparatus comprising a XY stage that a sample is placed on, an electron optical column, an electron gun emitting an electron beam disposed in the optical column, an electrostatic lens provided with electrodes aligned in an axial direction of the electron beam disposed in the optical column, wherein a shield plate is disposed between the XY stage and the electron optical column to block reflected electrons or secondary electrons generated by irradiation to the sample with the electron beam. The electrostatic lens is disposed immediately above the shield plate to change a focal position of the electron beam. A voltage supply device applies a negative voltage constantly to the electrostatic lens.

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Shizuoka, Japan

Takahito Nakayama