Kabushiki Kaisha Toshiba

Sony Corporation

Toshiba Electronic Devices & Storage Corporation

Kanto Kagaku Kabushiki Kaisha

Takahito Nakajima

Yoshihiro Uozumi

Tsuyoshi Matsumura

Hiroshi Kawamoto

Mikie Miyasato

Yuji Fukazawa

Kazuhiko Takase

Norio Ishikawa

Katsuhiro Sato

Atsushi Okuyama

Takeo Furuhata

Takuo Ohwada

Shinya Ito

Masafumi Muramatsu

Kazumi Asada

Yukino Hagino

A method for manufacturing a semiconductor device according to an embodiment includes forming a first insulating film on a semiconductor substrate, the first insulating film being patterned; forming a trench in the semiconductor substrate using the first insulating film as a mask; depositing a second insulating film in the trench and on the first insulating film; removing the second insulating film on the first insulating film using a CMP method; removing a portion of the first insulating film; removing a portion of the second insulating film using isotropic etching; and removing a remaining portion of the first insulating film.

Method for manufacturing semiconductor device

A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.

Post-dry etching cleaning liquid composition and process for fabricating semiconductor device

A polysilazane perhydride solution, prepared by dispensing polysilazane perhydride in a solvent containing carbon, is applied on a semiconductor substrate (), thereby forming a coated film (), which is heated, volatilizing solvent therein, thereby forming a polysilazane film (), which is chemical-treated, so the polysilazane film () is changed to a silicon dioxide film ().

Manufacturing method for semiconductor devices

An insulating tube includes a underlying insulating film, a first sidewall insulating film disposed on the underlying insulating film, a second sidewall insulating film disposed on the underlying insulating film, opposite to the first sidewall insulating film so as to provide a cavity between the first and second sidewall insulating films having the same height as the first sidewall insulating film, and an upper insulating film provided over the first and second sidewall insulating films.

Insulating tube, semiconductor device employing the tube, and method of manufacturing the same

A method of manufacturing a semiconductor device includes forming a trench in a semiconductor substrate, isotropically forming a trench surface insulating film on an inner surface of the trench, the trench surface insulating film including a deep part functioning as a capacitor insulating film, forming a surface layer side insulating film on the inner surface of the trench so that the surface layer side insulating film is continuously rendered thinner from the surface side of the substrate toward the deep side of the trench, and forming an electrode layer inside the surface layer side insulating film and the trench surface insulating film both formed on the inner surface of the trench.

Semiconductor device with DRAM cell and method of manufacturing the same

Insulating tube

For cleaning a semiconductor wafer without exposing it to the atmosphere, after the semiconductor wafer is placed in a cleaning vessel which is filled with deionized water through a first control valve, a first cleaning fluid is supplied to the cleaning vessel through a second control valve so that the deionized water overflows. A second cleaning fluid is then supplied to the vessel through a third control valve such that the first cleaning fluid overflows to produce a mixed fluid containing the first cleaning fluid, thereby cleaning the semiconductor wafer therein.

Method for cleaning semiconductor wafers

An apparatus for subjecting a semiconductor substrate to a washing process is equipped with a hermetically closable chamber for a substrate washing process and a washing process bath provided in the chamber to subject the substrate to the washing process. The semiconductor substrate is held in a horizontal state by a substrate support mechanism provided in the substrate washing process bath. A liquid supply mechanism is provided for supplying a liquid at least enough great to allow the semiconductor substrate to be immersed with the liquid. A chemicals liquid vapor and gas for substrate washing are supplied, by a chemicals component supply mechanism, into the chamber for a predetermined time period so that the chemicals liquid vapor and gas are dissolved into the liquid in the process bath to give a solution. The solution thus obtained is replaced by a pure water replacing mechanism with a specific liquid.

Apparatus for subjecting a semiconductor substrate to a washing process

Growing community of inventors

Yokohama, Japan

Takahito Nakajima