Fuji Electric Co., Ltd.

Takahito Harada

Haruo Nakazawa

Rikihiro Maruyama

Kyohei Fukuda

Fumio Shigeta

A semiconductor module includes a plurality of insulating circuit boards including semiconductor chips, each of the plurality of insulating circuit boards including a first outer edge among outer edges of the insulating circuit board facing an adjacent insulating circuit board of the plurality of insulating circuit boards, and a second outer edge among the outer edges excluding the first outer edge; a resin frame body having a crosspiece abutting against the first outer edges, and a frame element abutting against the second outer edges; a conductive component striding over the crosspiece to electrically connect the insulating circuit boards to each other; and an upper lid having a lid element covering an opening disposed at an upper part of the resin frame body and a partition protruding from a face of the lid element facing the insulating circuit boards to abut against a part of the crosspiece.

Semiconductor module

A semiconductor module includes a printed circuit board having an insulating plate, first and fourth wiring layers disposed on a principal surface of the insulating plate, second and third wiring layers disposed on another surface opposite to the principal surface, a first via disposed in the insulating plate and electrically and mechanically connected to the first and third wiring layers, and a second via disposed in the insulating plate and electrically and mechanically connected to the second and fourth wiring layers; a first insulating substrate disposed with a first circuit plate; a second insulating substrate disposed with a second circuit plate; a first semiconductor chip; a second semiconductor chip; a first heat release member fixed between the third wiring layer and the third circuit plate; and a second heat release member fixed between the fourth wiring layer and the first circuit plate.

A semiconductor device, and method of manufacturing the device, having a p type diffusion layer; a V-groove including a bottom surface parallel to the rear surface and exposing the p type diffusion layer and a tapered side surface rising from the bottom surface; a p type semiconductor layer on the rear surface surrounded by the tapered side surface of the V-groove; and a p type isolation layer formed on the side surface and electrically connecting the p type diffusion layer on the front surface and the p type semiconductor layer on the rear surface. The V-groove has a chamfered configuration around the intersection between a corner part of the side surface and the bottom surface of the V-groove. An object is to prevent performance degradation due to stress concentration at the corner part of a recessed part caused by thermal history in soldering.

Growing community of inventors

Matsumoto, Japan

Takahito Harada