National Institute for Materials Science

Kabushiki Kaisha Toshiba

Taiyo Nippon Sanso Corporation

Takahisa Ohno

Nobuo Tajima

Tatsuo Shimizu

Satoshi Hasaka

Minoru Inoue

Kaoru Sakoda

Yoshiaki Inaishi

Tomoaki Kaneko

Manabu Shinriki

Jun Nara

Kazuhiro Miyazawa

Takahiro Yamasaki

A semiconductor device according to an embodiment includes a silicon carbide layer, a gate electrode, and a silicon oxide layer disposed between the silicon carbide layer and the gate electrode, a number of single bonds between carbon atoms being larger than that of double bonds between carbon atoms in the silicon oxide layer.

Silicon carbide (SiC) MOSFET with a silicon oxide layer capable of suppressing deterioration of carrier mobility and variation in threshold voltage

An insulating film material for plasma CVD represented by a chemical formula (1) shown below, a method of film formation using the insulating film material, and an insulating film. According to the present invention, an insulating film having a low dielectric constant and a superior copper diffusion barrier property suitable for an interlayer insulating film or the like of a semiconductor device can be obtained. In the chemical formula (1), n represents an integer of 3 to 6, and each of Rand Rindependently represents one of CH, CH, CH, CH, CH, CH, CH, CH, CH, CHand CH. 

Insulating film material, method of film formation using insulating film material, and insulating film

Growing community of inventors

Tsukuba, Japan

Takahisa Ohno