Fujitsu Corporation

Nitto Chemical Industry Co., Ltd.

Fujitsu Microelectronics Limited

Fujitsu Limtied

Takahisa Namiki

Koji Nozaki

Ei Yano

Miwa Kozawa

Keiji Watanabe

Junichi Kon

Miwa Igarashi

Yoko Kuramitsu

Satoshi Takechi

Makoto Takahashi

Akiko Kotachi

Takashi Saitoh

Takashi Maruyama

Yasuo Yamagishi

Shun-ichi Fukuyama

Yuji Uehara

Tomio Nakamura

Shigeru Shimizu

Michiaki Kanamine

Keiko Yano

Akira Oikawa

Keita Ohtsuka

Hiroshi Shirataki

Yoko Makino

Masaaki Yamagami

Yasuhiro Yoneda

Eiichi Hoshino

Masashi Uzawa

Masami Ishikawa

Iwao Sugiura

Masahiro Uraguchi

Yoshihiro Matsuoka

Toshikatsu Minagawa

Yuichi Yamamoto

A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.

Manufacturing process of semiconductor device

To provide a method for easily forming microscopic patterns exceeding the limit of exposure in the patterning technique utilizing the photolithography method in the vacuum deep ultraviolet ray region, a resist pattern swelling material is comprised by mixing a water-soluble or alkali-soluble composition comprising a resin and a cross linking agent and any one of a non-ionic interfacial active agent and an organic solvent selected from a group of the alcohol based, chain or cyclic ester based, ketone based, chain or cyclic ether based organic solvents.

Resist pattern swelling material, and method for patterning using same

To provide a material including: a silicon-containing polymer having at least an alkali-soluble group and is represented by the following general formula (1); and an organic solvent capable of dissolving the silicon-containing polymer.(SiO)(RSiO)(OR)&#x2003;&#x2003;general formula (1)where Rrepresents at least one of a monovalent organic group, hydrogen atom and hydroxyl group, Rrepresents at least one of a monovalent organic group and hydrogen atom (where Rand Reach may appear twice or more, and at least one of Rand Rcontains an alkali-soluble group), 't' represents an integer of 1 to 3, 'a,' &#x201c;b,&#x201d; and &#x201c;c&#x201d; represent the relative proportions of their units (where a&#x2267;0, b&#x2267;0 and c&#x2267;0, and &#x201c;a,&#x201d; &#x201c;b,&#x201d; and &#x201c;c&#x201d; are not 0 at the same time), and (RSiO)may appear twice or more.

Resist cover film forming material, resist pattern forming method, and electronic device and method for manufacturing the same

The object of the present invention is to provide a process for forming a resist pattern that is capable to utilize excimer laser beam, the thickening level of the resist pattern is controllable uniformly, constantly and precisely, without being affected substantially by environmental changes such as temperatures and humidity, and storage period, and space pattern of resist may be formed with a fineness exceeding exposure limits or resolution limits of available irradiation sources. The process for producing a semiconductor device is characterized in that forming a resist pattern on a surface of workpiece, coating a resist pattern thickening material on the resist pattern, thickening the resist pattern to form a thickened resist pattern, and patterning the surface of workpiece by etching using the thickened resist pattern as a mask, wherein the resist pattern thickening material comprises a resin, and exhibits a pH value of above 7 and not over 14 at coating or after coating on the resist pattern.

Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for producing the same

The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern to be thickened e.g., in form of lines and spaces pattern, can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened; and which is suited for forming a fine space pattern or the like, exceeding exposure limits. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.

Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for manufacturing the same

Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereof

A semiconductor device includes a first multilayer interconnection structure formed on a substrate and a second multilayer interconnection structure formed on the first multilayer interconnection structure, wherein the first multilayer interconnection structure includes a pillar extending from a surface of the substrate and reaching at least the second multilayer interconnection structure.

Semiconductor device having a pillar structure

The object of the present invention is to provide a resist pattern thickening material, etc. which, when coated over a resist pattern formed of ArF resist material, etc., can efficiently thicken the resist pattern such as lines and spaces pattern, etc. regardless of the composition of ArF resist material, and the like; which can easily control the thickening amount of resist pattern by process condition; and which can easily and efficiently form a fine space pattern beyond the exposure (resolution) limits of light sources of the exposure devices at low cost. The resist pattern thickening material of the present invention comprises a solubilizer which melts the resist pattern at the temperature near its melting point and- a water-soluble element. The process for forming a resist pattern of the present invention comprises forming a resist pattern and coating a resist pattern thickening material of the present invention over the surface of the resist pattern.

The resist composition of the present invention contains at least one of a tannin and a derivative thereof. The method of forming a resist pattern of the present invention includes: forming a resist film on a surface of an object to be processed, by using the resist composition; and exposing and developing the resist film. The method of manufacturing a semiconductor device of the present invention includes: forming a resist film on a surface of an object to be processed, by using the resist composition; exposing and developing the resist film to form a resist pattern; and patterning the surface of the object by performing an etching through the resist pattern as a mask.

Resist composition, method of forming resist pattern, semiconductor device and method of manufacturing thereof

The present invention provides a resist pattern thickening material which can thicken a resist pattern to be thickened regardless of a material or a size thereof so as to form a fine space pattern, exceeding an exposure limit of exposure light. The resist pattern thickening material comprises: a resin; a crosslinking agent; and a nitrogen-containing compound. In a process for forming a resist pattern of the present invention, the resist pattern thickening material is applied on a surface of a resist pattern to be thickened, thereby forming a resist pattern. A process for manufacturing a semiconductor device of the present invention includes: applying the thickening material on a surface of a resist pattern to be thickened which is formed on an underlying layer, so as to thicken the resist pattern to be thickened and form a resist pattern; and patterning the underlying layer by etching using the resist pattern.

Resist pattern thickening material, process for forming resist pattern, and process for manufacturing semiconductor device

The present invention provides a resist pattern thickening material which can thicken a resist pattern and form a fine space pattern, exceeding exposure limits of exposure light used during patterning. The resist pattern thickening material contains a resin and a polyhydric alcohol. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.

Resist pattern thickening material and process for forming the same, and semiconductor device and process for manufacturing the same

A resist pattern thickness reducing material has at least one type selected from a water soluble resin and an alkali-soluble resin. A process for forming a resist pattern includes a step for coating the resist pattern thickness reducing material such that the surface of a first resist pattern formed is covered and forming a mixing layer of the resist pattern thickness reducing material and the material of the resist pattern, on the surface of the resist pattern. A process for manufacturing a semiconductor device includes a step for forming a resist pattern on an underlayer; a step for coating the resist pattern with a resist pattern thickness reducing material such that the surface of the resist pattern is covered and forming a mixing layer of a material of the resist pattern and the resist pattern thickness reducing material; a step for developing the resist pattern thickness reducing material to reduce thickness of the resist pattern so as to form a resist pattern reduced in thickness; a step for patterning the underlayer by etching by using the resist pattern as a mask.

Resist pattern thickness reducing material, resist pattern and process for forming thereof, and semiconductor device and process for manufacturing thereof

The present invention is a biodegradable resin composition having excellent physical properties such as strength, water-resistance, molding workability, thermal-resistance, and suitable for a molded article for various electric products. The biodegradable resin composition of the present invention contains a biodegradable resin and filler coated with a biodegradable coating resin in which the filler coated with the biodegradable coating resin is contained within the biodegradable resin. Preferable aspects are such as an aspect that the filler is at least one of mica, talc and montmorillonite, an aspect that a filler content of the biodegradable resin is in the range of 5 mass % to 50 mass %, an aspect that an average diameter of the filler is in the range of 0.01 &#x3bc;m to 200 &#x3bc;m, and an aspect that the biodegradable resin is polylactic acid.

Biodegradable resin composition, filler therefor and molded article thereof

Growing community of inventors

Kawasaki, Japan

Takahisa Namiki