Sharp Kabushiki Kaisha Corporation

Takahisa Kurahashi

Hiroshi Nakatsu

Tetsurou Murakami

Hiroyuki Hosoba

Tetsuroh Murakami

Shouichi Ohyama

Shouichi Ooyama

Kazuaki Sasaki

Osamu Yamamoto

Junichi Nakamura

Masahiko Sakata

Toshio Kimura

Masaomi Hioki

Kyotaro Nakamura

Akira Miyazawa

Shouici Ooyama

Hirotaka Sato

A solar cell includes a semiconductor substrate having a photoelectric converting portion, a first electrode formed on a first main surface of the semiconductor substrate, and a second electrode connected to the first electrode on the first main surface. The first electrode includes a plurality of first connecting portions to be connected to an interconnector and a first non-connecting portion not connected to an interconnector. The first non-connecting portion is arranged between first connecting portions to electrically connect the first connecting portions together. The first connecting portion and first non-connecting portion are coupled forming an angle larger than 90&#xb0; and smaller than 180&#xb0;. A solar cell string and a solar cell module employ the solar cells.

Solar cell, solar cell string and solar cell module

A semiconductor light emitting device includes a first conductivity-type first semiconductor layer; an emission layer; a second conductivity-type second semiconductor layer; and a second conductivity-type transparent substrate transparent to light beams from the emission layer and directly bonded to the second semiconductor layer. The transparent substrate has a parallel surface almost parallel to the emission layer on an opposite side of the emission layer, and an inclined surface adjoining the parallel surface and inclined to the parallel surface. Light beams totally reflected on the parallel surface and light beams totally reflected on a side surface of the transparent substrate come incident to the inclined surface at an angle smaller than the critical angle, and emit out of the semiconductor light emitting device.

Semiconductor light emitting device having a current narrowing portion and manufacturing method for semiconductor light emitting device

On a GaAs substrate (), are formed a DBR (Distributed Bragg Reflector) (), and a light-emitting layer () made of a plurality of layers of AlGaInP (0&#x2266;y&#x2266;1, 0&#x2266;z&#x2266;1) above the DBR (). A semiconductor layer or a plurality of semiconductor layers ()-() having a number of layers of 1 or more are formed on the light-emitting layer (), and a grating pattern for scattering light is formed on a surface of the semiconductor layer () by photolithography and by etching with a sulfuric acid/hydrogen peroxide based etchant. Thus, a semiconductor device small in radiation angle dependence of light emission wavelength, as well as a manufacturing method therefor, are provided.

Semiconductor light-emitting device and manufacturing method therefor

An n-type AlAs/n-type AlGaAs DBR layer and a p-type (AlGa)InP/p-type AlInP DBR layer are formed on an n-type GaAs substrate at specified intervals so that a reflection spectrum is centered at 650 nm and the resonance wavelength becomes 650 nm. A quantum well active layer (light-emitting layer) is formed so that the light emission peak wavelength becomes 650 nm in the belly position of the standing wave generated in a resonator constructed of both the DBR layers. A grating pattern is formed on the surface of a p-type AlGaAs light diffusion layer that serves as a light-emitting surface surrounded by a p-type electrode. By thus roughening the light-emitting surface, light emitted from the light-emitting layer is diffused in various directions, reducing the radiation angle dependency of the emission light wavelength.

Semiconductor light-emitting device and method for fabricating the device

A semiconductor light-emitting device exhibits high reflectance even with less number of pairs of light-reflecting layers, and allows light emitted from the active layer to be effectively extracted outside. This semiconductor light-emitting device is fabricated at good mass productivity by a semiconductor light-emitting device manufacturing method including the step of providing an active layer which generates light having a specified wavelength on a semiconductor substrate. On the semiconductor substrate, are stacked an AlGaAs layer and the active layer, in this order. Part of the AlGaAs layer with respect to the is changed into an AlOlayer (where y is a positive real number).

Method of manufacturing a semiconductor light-emitting device

There is provided and manufactured, at a low cost and with high yields, a semiconductor light emitting device which allows extraction of light produced in an emitter layer not only from its top surface but also from its side surfaces and which has high luminance. An AlGaInP-based semiconductor light emitting device having a contact layermade of (AlGa)InP (0&#x2266;y&#x2266;1, 0&#x3c;z&#x3c;1) disposed between an emitter layerand a transparent substratewhich is transparent to emission wavelengths from the emitter layer

Semiconductor light emitting device and method for manufacturing same

A semiconductor light emitting device has in sequence on a semiconductor substrate, a multilayer reflection film, a semiconductor layer, and a quantum well active layer. A distance between an upper surface of the multilayer reflection film and a lower surface of the quantum well active layer is 2&#x3bb;/n or less, where &#x3bb; is a light emission wavelength and n is an average refractive index of the semiconductor layer disposed in between the multilayer reflection film and the quantum well active layer. A phase difference between a reflected ray of light reflected by the multilayer reflection film and an emitted ray of light from the quantum well active layer is a multiple of 2&#x3c0;. The semiconductor light emitting device stably obtains a specified peak wavelength even when there is slight variance in the distance between the upper surface of the multilayer reflection film and the lower surface of the quantum well active layer.

Semiconductor light emitting device for stably obtaining peak wave length of emission spectrum

A light emitting diode (LED) of a double hetero-junction type has a light-emitting layer of a GaAlInP material, a p-type cladding layer and an n-type cladding layer sandwiching the light-emitting layer therebetween, a p-side electrode formed on the p-type cladding layer side, and an n-side electrode formed on the n-type cladding layer side. The p-type cladding layer consists of a first p-type cladding layer positioned closer to the light-emitting layer and having a lower aluminum content and a lower impurity concentration, and a second p-type cladding layer positioned less closer to the light-emitting layer and having a higher aluminum content and a higher impurity concentration. The LED also has a current blocking layer below the p-side electrode for locally blocking electric current flowing from the p-side electrode to the n-side electrode.

Light emitting diode

A light emitting diode having, at least, an AlGaInP light emitting layer and a transparent electrode, wherein the transparent electrode is made of a ZnO film doped with a group III element or a compound thereof.

A semiconductor light-emitting device includes an active layer having a single quantum well structure. The single quantum well structure enables a high-speed response such that the rise and fall time is 2.1 nsec. Further, the single quantum well active layer is doped with Zn at a concentration of 8&times;10 cm . Thereby, the half-value width of the light-emitting spectrum is 25 nm or more, which is wider than in the case of no doping. Thus, temperature dependence of an optical output is reduced.

Semiconductor light-emitting device

A resonant cavity type light emitting diode has a first DBR made of n-type AlAs or Al Ga As, a quantum well active layer, a second DBR made of p-type (Al Ga ) In P or Al In P, and an n-type current constriction layer on an n-type GaAs substrate. The first DBR and the second DBR form a resonator. The quantum well active layer is formed in a position of an antinode of a standing wave inside the resonator. Between the second DBR and the current constriction layer, there is provided a p-type GaP etching protection layer that has a value obtained by dividing resistivity by thickness being 1&times;10 &OHgr; or more. Since a current in a current flow pass formed in the current constriction layer hardly diffuses to the outside of the current flow pass, there is generated few region with low current density that causes deterioration of responsespeed in a quantum well layer. Thus, the light emitting diode has an excellent high-speed response.

Semiconductor light emitting device

Is provided a resonant cavity type light emitting diode having excellent humidity durability and a light output unsaturated even several 10 mA., which is suitable for mass production. The semiconductor light emitting element has a resonator formed by one set of multi-layer reflecting films disposed at a constant distance on a GaAs substrate inclined at an angle of not less than 2 degrees in the direction &lsqb;011&rsqb; or &lsqb;0-1-1&rsqb; from the plane ( ) and a light emitting layer disposed at a loop position of a standing wave in the resonator, wherein a multi-layer reflecting film disposed on the GaAs substrate side is composed of plural layers of Al Ga As (0 &lE;x&lE;1) and a multi-layer reflecting film disposed on the opposite side of the GaAs substrate is composed of plural layers of Al Ga In P (0&lE;y&lE;1, 0&lE;z&lE;1), thereby achieving an improved humidity durability and an increased reflection factor by increasing the number of the reflection layers.

Semiconductor light emitting element

A semiconductor light-emitting device exhibits high reflectance even with less number of pairs of light-reflecting layers, and allows light emitted from the active layer to be effectively extracted outside. This semiconductor light-emitting device is fabricated at good mass productivity by a semiconductor light-emitting device manufacturing method including the step of providing an active layer which generates light having a specified wavelength on a semiconductor substrate. On the semiconductor substrate, are stacked an Al Ga As layer and the active layer, in this order. Part of the Al Ga As layer with respect to the is changed into an AlO layer (where y is a positive real number).

Semiconductor light-emitting device and manufacturing method therefor, and LED lamp and LED display

An n-type AlAs/n-type Al Ga As DBR layer and a p-type (Al Ga ) In P/p-type Al In P DBR layer are formed on an n-type GaAs substrate at specified intervals so that a reflection spectrum is centered at 650 nm and the resonance wavelength becomes 650 nm. A quantum well active layer (light-emitting layer) is formed so that the light emission peak wavelength becomes 650 nm in the belly position of the standing wave generated in a resonator constructed of both the DBR layers. A grating pattern is formed on the surface of a p-type Al Ga As light diffusion layer that serves as a light-emitting surface surrounded by a p-type electrode. By thus roughening the light-emitting surface, light emitted from the light-emitting layer is diffused in various directions, reducing the radiation angle dependency of the emission light wavelength.

In a semiconductor light-emitting element, a first DBR and a second DBR, with a specified spacing left between them, form a resonator, and a single quantum well active layer is positioned at the loop of a standing wave within this resonator. The single quantum well active layer is composed of a Ga In P well layer and a pair of (Al Ga ) In P barrier layers, which sandwiches the Ga In P well layer therebetween. The impurity concentration of the (Al Ga ) In P barrier layers is higher than that of the Ga In P well layer. For example, the impurity concentration of the Ga In P well layer is set to 2&times;10 cm , while the impurity concentration of the (Al Ga ) In P barrier layers is set to 2&times;10 cm .

Growing community of inventors

Kashiba, Japan

Takahisa Kurahashi