Fujitsu Corporation

Takahisa Ito

Seiji Makino

Kouichi Suzuki

Tomoyuki Okada

Mitsuo Sakurai

Ryuji Kobayashi

Naoyuki Ishiwata

Katsuji Tabara

Yoshimasa Iiduka

Yasuyuki Kushida

A method for correcting pattern data is provided which is capable of making a proper correction to data of a pattern having a complicated layout. A correction is made to pattern data affected by a proximity effect when a pattern is formed on a photomask or wafer according to design data for a semiconductor device, by detecting, according to the design data, a space portion being placed on a photomask or wafer and having a specified size occurring between patterns facing each other in a first direction, by producing pattern data corresponding to an assist pattern that fills the space portion, by detecting an edge to be corrected in a position being opposite to an edge of the assist pattern extending in a second direction between the patterns facing each other, out of framing portions of the pattern being placed in parallel and near to the assist pattern, by making a correction being independent of a correction to be made to other edge of the framing portion to the detected edge to be corrected, and by removing the assist pattern.

Method for correcting pattern data and method for manufacturing semiconductor device using same

A semiconductor device includes a substrate, a circuit pattern formed on the substrate, and a plurality of dummy patterns formed on the substrate in addition to the circuit pattern, wherein the plurality of dummy patterns include a plurality of marker dummy patterns in an array thereof, the marker dummy patterns being distinguishable from other dummy patterns and are distributed irregularly in the array of the dummy patterns.

Semiconductor device having a dummy pattern

A pattern image comparison method is provided which comprises a first input step of inputting a first pattern image based on design data for a reticle mask or a semiconductor device; a second input step of inputting a second pattern image of the reticle mask or semiconductor device manufactured based on the design data; a calculation step of calculating at least one parameter of parameters including a part or all of area, outer periphery, barycenter, and diagonal line of the first pattern image and the second pattern image; and an output step of outputting a result of comparison of a pattern on the reticle mask or semiconductor device and a pattern of the design data based on the calculated parameters of the first and second pattern images.

Pattern image comparison method, pattern image comparison device, and program

In the exposure method which carries out optical proximity correction processing for exposure data having a plurality of exposure patterns and exposes a sample in accordance with such corrected exposure data, the exposure patterns to be corrected are converted, in the optical proximity correction processing, into a minus objective pattern and a minus pattern to be deleted from the minus objective pattern, to form corrected exposure data. And, the minus pattern is deleted from the minus objective pattern of the corrected exposure data to bitmap a corrected exposure pattern, to expose a sample in accordance with such bitmapped corrected exposure pattern.

Exposure method utilizing optical proximity corrected exposure patterns, an apparatus for generating optical proximity corrected exposure data, and an exposure apparatus for optical proximity corrected exposure data

Growing community of inventors

Kawasaki, Japan

Takahisa Ito