Sumitomo Electric Industries, Limited

Sumitomo Electric Hardmetal Corp.

A.l.m.t. Corporation

Takahisa Iguchi

Tsutomu Nakamura

Akihiko Ikegaya

Tetsuo Nakai

Yoshiharu Yamamoto

Takayuki Fudo

Kazuo Sasaya

Syunsuke Yamanaka

Fumiatsu Sato

Akira Nakano

Naoji Fujimori

Hiromu Shiomi

Katsuko Yamamoto

Takashi Tsuno

Katsuhito Yoshida

Toshiya Takahashi

Katsuyuki Tanaka

Yoshiaki Kumazawa

Shigeru Yoshida

Fuminori Higuchi

Provided are a method for producing sodium tungstate by supplying an oxidant made of sodium nitrate or sodium nitrite to bring a tungsten containing material and the oxidant into contact with each other in an atmosphere containing oxygen to thereby continuously produce a reaction product; a method for collecting tungsten using the method; and an apparatus for producing sodium tungstate. Also provided are a method for producing a sodium tungstate aqueous solution in which a reductant is introduced into a melt containing the above-described reaction product which is then dissolved in water; and a method for collecting tungsten using the method.

Method for producing sodium tungstate, method for collecting tungsten, apparatus for producing sodium tungstate, and method for producing sodium tungstate aqueous solution

A diamond electrode includes a conductive silicon substrate having a plurality of pores. The diamond electrode also includes a conductive diamond covering the conductive silicon substrate. The inner wall surfaces of the plurality of pores are at an angle of 60&#xb0; to 85&#xb0; with respect to a substrate of the conductive silicon substrate.

Diamond electrode, method for producing same, and electrolytic cell

A conductive polycrystalline diamond film having specific resistance of at least 1&times;10,&OHgr;cm and less than,&OHgr;cm, whose film thickness is in the range of at least 0.1 &mgr;m and not more than 500 &mgr;m, is film-formed by vapor-phase synthesis on a surface employed for pressure bonding, a surface opposite to this surface or at least two side surfaces intersecting with these surfaces on a substrate of a bonding tool tip that is applicable for bonding and packaging a semiconductor chip.

Tool tip and bonding tool comprising the tool tip and control method for the bonding tool

A polycrystalline diamond is prepared by chemical vapor deposition (step 101). A surface of the polycrystalline diamond is metallized (step 102). The metallized surface of the polycrystalline diamond is grooved with a YAG laser (step 103). A wedge or the like is driven into the grooves of the polycrystalline diamond to pressurize the same, whereby the polycrystalline diamond is divided along the grooves (step 104). Alternatively, a surface of a polycrystalline diamond prepared by chemical vapor deposition is grooved with a YAG laser (step 112), and the surface of the polycrystalline diamond is metallized (step 113) after the grooving. The obtained diamond heat sink (10) includes a first layer (11a) grooved with a laser, and a mechanically divided second layer (11b). Graphite adheres to the outer peripheral surface of the first layer (11a). The outer peripheral surface of the second layer (11b) has a greater surface roughness than that of the first layer (11a).

Polycrystalline diamond heat sink having major surfaces electrically

A semiconductor laser is provided with a heat radiating component for radiating or dissipating heat which is generated in operation. In this heat radiating component, a polycrystalline diamond layer (3) synthesized by vapor deposition is formed on an upper surface of a stem (4). A semiconductor laser element (1) is bonded, e.g. by brazing to the surface of the vapor-deposited polycrystalline diamond layer (3) through a brazing filler metal (2). The heat radiating component has a thermal expansion coefficient which is the same as that of an LSI chip to be mounted thereon to provide an excellent heat radiating property.

Heat radiating component and semiconductor device provided with the same

A polycrystalline diamond is prepared by chemical vapor deposition (step 101). A surface of the polycrystalline diamond is metallized (step 102). The metallized surface of the polycrystalline diamond is grooved with a YAG laser (step 103). A wedge or the like is driven into the grooves of the polycrystalline diamond to pressurize the same, whereby the polycrystalline diamond is divided along the grooves (step 104). Alternatively, a surface of a polycrystalline diamond prepared by chemical vapor deposition is grooved with a YAG laser (step 112), so that the surface of the polycrystalline diamond is metallized (step 113) after the grooving.

Method of manufacturing a diamond heat sink

Growing community of inventors

Itami, Japan

Takahisa Iguchi