Seiko Epson Corporation

Takahisa Akiba

Kunio Watanabe

Masahiro Hayashi

Susumu Kenmochi

Tomo Takaso

A method for manufacturing a semiconductor device includes: forming a first insulation film on a portion of a first region of a semiconductor substrate and forming a second insulation film between a second region and a third region of the semiconductor substrate; etching an upper portion of the first insulation film such that the thickness of the first insulation film is less than the thickness of the second insulation film; forming a third insulation film in the second region and forming a fourth insulation film in the third region; and forming a first gate electrode on the first insulation film whose upper portion was etched, forming a second gate electrode on the third insulation film, and forming a third gate electrode on the fourth insulation film.

Semiconductor device and method for manufacturing the same

A semiconductor device including: a semiconductor layer; a gate insulating layer; a gate electrode; a channel region; a source region and a drain region; a guard ring region; an offset insulating layer; a first interlayer dielectric; a first shield layer formed above the first interlayer dielectric and the guard ring region and electrically connected to the guard ring region; a second interlayer dielectric; and a second shield layer formed above the second interlayer dielectric, wherein the first shield layer is provided outside of both ends of the gate electrode in a channel width direction when viewed from the top side; and wherein the second shield layer is provided in at least part of a first region and/or at least part of a second region, the first region being a region between one edge of the gate electrode and an edge of the first shield layer opposite to the edge of the gate electrode in the channel width direction when viewed from the top side, and the second region being a region between the other edge of the gate electrode and an edge of the first shield layer opposite to the other edge of the gate electrode in the channel width direction when viewed from the top side.

Growing community of inventors

Tsuruoka, Japan

Takahisa Akiba