Hitachi-high-technologies Corporation

Takahiro Yonemoto

Masahiro Sumiya

Junya Sasaki

Yoshito Kamaji

A plasma processing method includes forming a deposition film containing silicon as a component in a processing chamber by generating a first plasma in the processing chamber; plasma etching of a sample in which a film containing a metal is formed in the processing chamber; and removing of a metal-based reaction product by generating a second plasma including an element having reducibility and halogen. The plasma processing method further includes removing the deposition film by a third plasma generated by using gas containing a fluorine element; and removing residual gas by a fourth plasma.

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Tokyo, Japan

Takahiro Yonemoto