Fujifilm Corporation

Wako Pure Chemical Industries, Inc.

Takahiro Yokomizo

Masahiko Kakizawa

Tsutomu Watahiki

Kohei Hayashi

Hiroyuki Tsurumoto

Yoshihisa Tsurumi

Takayuki Kajikawa

Hironori Mizuta

Satoshi Shirahata

The present invention addresses the problem of providing a kit for a cleaning agent, which is used for the purpose of preparing a cleaning agent that maintains, even after long-term storage, adequate impurity removal performance from the surface of a semiconductor substrate that has been subjected to a CMP process. The present invention also addresses the problem of providing a method for preparing the above-described cleaning agent. A kit for a cleaning agent according to the present invention is a kit for preparing a cleaning agent which is used for cleaning of a semiconductor substrate that has been subjected to a CMP process, and which has a pH of from 7.5 to 13.0. This kit for a cleaning agent comprises a first liquid that is acidic and contains a compound represented by formula (1) and a second liquid that is alkaline and contains a basic compound; and an acidic compound is contained in at least one of the first liquid and the second liquid.

Kit for cleaning agent and method for preparing cleaning agent

The object of the present invention is to provide: an etching agent for a titanium-based metal on a semiconductor substrate, which suppresses decomposition of hydrogen peroxide, has a long liquid service life, and has less need for controlling the concentration of hydrogen peroxide in the etching agent, even in the cases where the etching agent is used for a semiconductor substrate having the titanium-based metal and a metallic copper or a metal alloy; an etching method; and an etching agent preparation liquid for use by mixing with hydrogen peroxide. The present invention relates to: an etching agent for a titanium-based metal on a semiconductor substrate, having a titanium-based metal and a metallic copper or a copper alloy on the upper part of the titanium-based metal, comprising an aqueous solution containing at least (A) hydrogen peroxide, (B) phosphonic acid-based chelating agent having a nitrogen atom in the structure, (C) alkali metal hydroxide, and (D) organic acid having at least one hydroxyl group and at least three carboxyl groups; an etching method, which comprises using the etching agent; and an etching agent preparation liquid for use by mixing with hydrogen peroxide.

Etching agent, etching method and etching agent preparation liquid

Growing community of inventors

Kawagoe, Japan

Takahiro Yokomizo