Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Engineering Company, Limited

Renesas Electronics Corporation

Renesas Technology Corp.

Takahiro Yashita

Keisuke Kawakita

Hideki Miyake

Kazuaki Kubo

Kikuo Kato

Kazuyoshi Takai

Hiroyuki Tamagawa

In a power phase period when in normal operation, switch portions SWH and SWL and switch portions SWH and SWL are turned ON, respectively, and switch portions SWH and SWL are turned OFF. And floating power supply is provided from an electrostatic capacitance element CS to buses A and B, a floating control circuit, a transmitter circuit, and a receiver circuit, respectively. In a data phase period, the switch portions SWH and SWL are turned ON, and the switch portions SWH, SWL, SWH, and SWL are turned OFF. By that manner, the electrostatic capacitance element CS is charged by the power supply of a battery B, and an electrostatic capacitance element CH provides the floating power supply to the floating control circuit, the transmitter circuit, and the receiver circuit, respectively. By this manner, a floating switch unitin which the number of the switch portions is considerably reduced can be configured.

Semiconductor integrated circuit device

A semiconductor device includes an N channel MOS transistor. The N channel MOS transistor includes a first P type buried layer that isolates an N epitaxial region on a P type substrate (P-SUB) from another N epitaxial region, a drain in an N well in the N epitaxial region, a source in a P well surrounding sides of the N well to isolate the N well, and a gate on upper layer portions of the drain and the source. The MOS transistor also includes a second P type buried layer between the N well and the P well and the substrate and contiguous to the P well, and an N buried layer contiguous to the P type buried layer and the P-SUB. The N epitaxial region, the P-SUB, and the first P type buried layer are connected to ground potential.

Semiconductor device

A lateral transistor includes a semiconductor substrate of a first conductivity type having a major surface; an emitter region of a second conductivity type in the semiconductor substrate on the major surface of the semiconductor substrate; a collector region of a second conductivity type in the semiconductor substrate on the major surface of the semiconductor substrate, spaced from and surrounding the emitter region, and including sides and corners; an electrically insulating layer on the major surface of the semiconductor substrate and including a first penetrating hole extending to the collector region except at a first of the corners and a second penetrating hole extending to the emitter region; a collector electrode contacting the collector region through the first penetrating hole and surrounding the emitter region except at the first corner; an emitter electrode at the same level as the collector electrode and contacting the emitter region through the second penetrating hole; and an emitter wiring layer at the same level as the emitter electrode, disposed on the insulating layer, and extending from the emitter electrode across the first corner.

Lateral type transistor

A semiconductor device includes a power transistor group and a signal circuit on the same substrate. The substrate is grounded at an isolation region at an end of the substrate adjacent to the power transistor group so that the grounded portion of the substrate is distant from the signal circuit.

Inductive load driving and control circuits inside isolation regions

A switching signal generator outputs a switching signal which indicates either an accelerating mode or a decelerating mode by comparing a motor control signal and reference voltage. A first activation signal generator and a second activation signal generator output a first activation signal and a second activation signal, respectively, according to the switching signal from the switching signal generator. A switching control signal generator outputs either a switching control signal based on a motor location signal or a desired electric potential according to the switching signal from switching signal generator, a first activation signal from the first activation signal generator and a motor location signal. When a power-supply side controller and an earth side controller are in a decelerating mode, power-supply side first, second, and third output transistors are non-conductive and first second and third earth side output transistors are conductive by supplying a base current based on a predetermined electric potential from the switching control signal generator.

Motor driving circuit for a three-phase brushless motor

A lateral transistor includes a first conductivity type semiconductor substrate, a first second conductivity type region in the substrate, a second second conductivity type region in the substrate spaced from and partially surrounding the first region including a plurality of sides and corners; an electrically insulating film covering the semiconductor substrate and including respective penetrating holes extending to the first and second regions; a first metal film disposed on the insulating film and contacting the second region through a first of the penetrating holes; and a second metal film disposed on the insulating film and contacting the first region through a second of the penetrating holes wherein the first metal film is missing opposite a first of the corners of the second region and the second metal film extends across the second region at the first corner.

Lateral transistor

A semiconductor integrated circuit device for driving a motor and including a p-type semiconductor substrate having spaced apart first and second areas; power transistors in the semiconductor substrate within the first area; a small signal system circuit in the semiconductor substrate within the second area; and an n-type isolating region in the semiconductor substrate separated from the first and second areas and disposed at least partially between the first and second areas, the n-type isolating region being connected to ground.

Growing community of inventors

Tokyo, Japan

Takahiro Yashita