Mitsubishi Heavy Industries Limited

Mitsubishi Power, Ltd.

Oki Semiconductor Co., Ltd.

Takahiro Yamauchi

Kuniaki Aoyama

Katsuhiko Abe

Ichiro Nagano

Toru Tanaka

Shintaro Kumano

Mayumi Saito

Akihisa Endo

Nobuyoshi Tanaka

Yasuoki Tomita

Yukihiko Inoue

Toshihiko Niinomi

Masato Shida

Koji Imakita

Shun Niizuma

Toshihiko Toyota

Tomohiro Baba

Prabhakar Sachan

Tsuyoshi Kinoshita

Kentaro Shikata

Shinsaku Endo

Satoru Mouri

Hisaki Yamauchi

Shogo Ichishiba

Yoshiyuki Nagata

A life consumption estimation device for estimating life consumption of at least one part of a gas turbine includes: a predicted air temperature information acquisition unit configured to acquire predicted air temperature information regarding a future air temperature; a predicted load information acquisition unit configured to acquire predicted load information regarding a future load of the gas turbine; a gas turbine state quantity estimation unit configured to estimate at least one gas turbine state quantity regarding a future state quantity of the gas turbine, on the basis of predicted air temperature information acquired by the predicted air temperature information acquisition unit and the predicted load information acquired by the predicted load information acquisition unit; and a life consumption estimation unit configured to estimate the life consumption of the at least one part, on the basis of the gas turbine state quantity estimated by the gas turbine state quantity estimation unit.

Life consumption estimation device

An acquisition unit is configured to acquire measurement values of a target device. The measurement values that are acquired include at least a temperature and a flow rate of an input fluid to be input to the target device, and a temperature and a flow rate of an output fluid to be output from the target device. A correction unit is configured to obtain a correction measurement value by which the measurement values are corrected through thermal equilibrium calculations based on the measurement values. A distance calculation unit is configured to calculate a Mahalanobis distance with a factor of the correction measurement value.

Monitoring device, method for monitoring target device, and program

An acquisition unit is configured to acquire measurement values of a target device. A likelihood calculation unit is configured to calculate an occurrence likelihood for each of a plurality of phenomena that are liable to occur to the target device based on the measurement values acquired by the acquisition unit. A table storage unit is configured to store a table in which the plurality of phenomena and occurrence causes of abnormalities of the target device are associated to each other. As estimation unit is configured to estimate the occurrence causes based on the occurrence likelihood and the table.

An operational support device sets an execution time of overfiring serving as an operation of a power generation facility at an output higher than a rated output. The device includes a life index value acquisition unit that acquires a life index value at a start time, the life index value being an index indicating a life of the power generation facility and changing in value in one direction with the output of the power generation facility; an output pattern setting unit that sets an output pattern per unit time of the power generation facility from the start time to a stop time based on the life index value such that the life index value reaches a predetermined value; and an overfiring setting unit that sets, based on the output pattern, a time in a period from the start to the stop time at which the overfiring is to be performed.

Operational support device for power generation facility

A notification device is provided with: an abnormality estimation unit for estimating a state relating to an abnormality of a plant and a factor relating to the abnormality of the plant; an item specifying unit for specifying inspection items on the basis of the abnormality of the plant and the state relating to the factor relating to the abnormality of the plant estimated by the abnormality estimation unit; a notification unit for notifying of the inspection items specified by the item specifying unit; a stop-time item specifying unit for specifying the inspection items which should be checked at a time of a stop out of the inspection items specified by the item specifying unit; a check result acquisition unit for receiving a check result for the inspection items notified of by the notification unit; and a stop-time item output unit for outputting the inspection items which should be checked at the time of stop.

Notification device, notification method, and program

A diagnostic device includes a storage unit that stores first information including a first abnormal event which occurred in the past in a plant, a first attribution event that is a cause of the first abnormal event, and a first occurrence probability of the first attribution event, in which a causal relationship between the first abnormal and attribution events is indicated by a tree structure, and second information including a second abnormal event which is supposed to occur in the plant but has not yet occurred, a second attribution event that is a cause of the second abnormal event, and a second occurrence probability of the second attribution event, in which a causal relationship between the second abnormal and attribution events is indicated by a tree structure; and an estimation unit that estimates the cause of the sign of the abnormality, based on the first and second information.

Diagnostic device, diagnostic method, and program

The method includes the steps of forming a gate insulating film over a first conductivity-type layer surface of a semiconductor substrate, implanting a second conductivity-type impurity into the first conductivity-type layer located on both sides adjacent to a conductive layer forming predetermined region, forming a conductive layer over the gate insulating film surface located to cover the first conductivity-type layer surface with no impurity implanted therein and the partial regions surface of the pair of low-concentration diffusion layers adjacent to the first conductivity-type layer, implanting a second conductivity-type impurity into regions uncovered with the conductive layer, of the pair of low-concentration diffusion layers to contact source and drain electrodes, and forming slits to divide regions lying on the sides of the high-concentration diffusion layers, each of which is provided to contact at least the drain electrode of the conductive layer located over the low-concentration diffusion layers, into two respectively.

Manufacturing method of semiconductor device

Growing community of inventors

Kanagawa, Japan

Takahiro Yamauchi