Canon Kabushiki Kaisha

Ulvac, Inc.

Takahiro Yajima

Masahiro Kanai

Shotaro Okabe

Akira Sakai

Tadashi Hori

Yuzo Kohda

Yasushi Fujioka

Yuzo Koda

Tadashi Sawayama

Takeshi Shishido

Takayuki Sumida

Tomonori Nishimoto

Akira Shimazu

Tatsuya Saito

Shuichiro Sugiyama

Tatsuro Uchida

Ryo Hayashi

Takahiro Sato

Jinsho Matsuyama

Takaharu Kondo

Hirokazu Ohtoshi

Yoshinori Tateishi

Tomona Yamaguchi

Koichiro Moriyama

Yuko Kato

Youichi Fukaya

Shinichiro Watanabe

Tadashi Oka

Yousuke Matsumoto

Shouta Kanai

Yasuaki Murata

A semiconductor device includes an anode, a cathode, a first functional layer between the anode and cathode, and a second functional layer between the first functional layer and the cathode. The first functional layer contains a first quantum dot having a first ligand, and the second functional layer contains a second quantum dot having a second ligand different from the first ligand. The second ligand is an aromatic compound having a sulfide bond and an ester bond.

Semiconductor device having quantum dots, display device, imaging system, and moving body

An embodiment according to the present disclosure provides a photoelectric conversion element including a first electrode, a second electrode, and a photoelectric conversion layer disposed between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a first region, a second region disposed between the first region and the second electrode, and a third region that is disposed between the second region and the second electrode and that is in contact with the second region, the inorganic ligand ratio in the second region is higher than the inorganic ligand ratio in the first region, the inorganic ligand ratio at the interface of the third region to the second region is lower than the inorganic ligand ratio in the first region, and the inorganic ligand ratio in the second region increases with increasing proximity to the third region.

Photoelectric conversion element, light-receiving element including the same, photoelectric conversion apparatus, mobile unit, method for manufacturing photoelectric conversion film, and method for manufacturing photoelectric conversion element

A vapor deposition mask includes a silicon substrate including a first region that has a first thickness and that includes a part in which a plurality of through-holes is arranged, and a second region that is arranged at an outer circumference of the first region and that has a second thickness that is greater than the first thickness. The silicon substrate has an inner wall that constitutes a step between the first region and the second region. An outer edge of the inner wall has a curve portion in a plan view, and the inner wall has a plurality of steps in a cross-section view.

Vapor deposition mask and method of manufacturing device using vapor deposition mask

A detector that detects or oscillates an electromagnetic wave, the detector including a plurality of antennas having a rectifying element, wherein the plurality of arranged antennas at least include: a first antenna having a first resonant frequency; and a second antenna having a second resonant frequency that differs from the first resonant frequency.

Detector and image forming apparatus

There is disclosed a semiconductor device including: a substrate; a plurality of first electrodes arranged away from each other with gaps on the substrate; a first intermediate layer arranged on each of the plurality of first electrode; a second intermediate layer, at least a part of which is arranged on each of the gaps of the plurality of first electrodes; a photoelectric conversion layer arranged on the first intermediate layer and the second intermediate layer; and a second electrode arranged on the photoelectric conversion layer. A content of oxygen on a molar basis in the second intermediate layer is higher than a content of oxygen on a molar basis in the first intermediate layer.

Semiconductor device

A semiconductor apparatus includes, a substrate having a main surface, an upper electrode disposed above the substrate, a first lower electrode and a second lower electrode disposed between the substrate and the upper electrode, an isolation region disposed between the first lower electrode and the second lower electrode, a functional layer configured to perform light emission or photoelectric conversion, and an interface layer disposed at least on the first lower electrode. The semiconductor apparatus further includes a first insulator portion that is disposed between the first lower electrode and the second lower electrode and includes a first portion disposed at a position farther away from the main surface than an upper surface of the interface layer.

Semiconductor apparatus, photodetection system, light emitting system, and moving body

A light-emitting element in which a first member having a light-emitting diode layer formed therein, and a second member having a drive circuit layer formed therein, are stacked and bonded to each other, wherein the light-emitting diode layer and the drive circuit layer are electrically connected by an electrode; the second member includes a light-shielding portion different from the electrode; the light-shielding portion is disposed so as to cover at least part of a first pixel and a second pixel demarcated by an isolation structure provided in the light-emitting diode layer; and a layer that forms the light-emitting diode layer in the first pixel and a layer that forms the light-emitting diode layer in the second pixel are shared.

Light-emitting element, and method for producing a light-emitting element

A quantum dot includes an inorganic particle, and an organic ligand and an inorganic ligand on a surface of the inorganic particle, and the molar percentage of the inorganic ligand relative to the total amount of the inorganic ligand and the organic ligand is 25% or more and 99.8% or less.

Quantum dot, photoelectric conversion element including the same, light receiving element, photoelectric conversion apparatus, moving object, method for producing quantum dot, and method for producing photoelectric conversion element

An imaging device includes a first substrate including a photoelectric conversion layer that includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type and in which a plurality of photoelectric conversion units are provided; a second substrate that is joined to the first substrate and in which a readout circuit substrate that outputs a signal based on information detected by the plurality of photoelectric conversion units is provided; and an element isolation portion defined by a first opening provided so as to penetrate the second substrate and at least one of the first semiconductor layer and the second semiconductor layer, and each of the plurality of photoelectric conversion units is separated from each other by the element isolation portion.

Imaging device and method of manufacturing imaging device

To provide a device structure that is capable of preventing oxygen, water, and the like from entering the device, and a method of producing the same. A device structureaccording to an embodiment of the present invention includes a substrate (base), a device layer, a first inorganic material layer (convex portion), and a first resin material. The substratehas a first surfaceand a second surfaceopposite to the first surface. The device layeris arranged on at least the first surfaceout of the first and second surfacesand. The first inorganic material layeris formed on the first surface. The first resin materialis unevenly arranged around the first inorganic material layer

Device structure and method of producing the same

A method of forming a silicon-based thin film according to the present invention comprises introducing a source gas containing silicon fluoride and hydrogen into a vacuum vessel, and using a high frequency plasma CVD method to form a silicon-based thin film on a substrate introduced into the vacuum vessel, wherein a luminous intensity attributed to SiF&#x3b1; (440 nm) is not smaller than a luminous intensity attributed to H&#x3b1; (656 nm), thereby providing a photovoltaic element with excellent performance at a low cost as compared with a conventional one, a method of forming a silicon-based thin film with excellent characteristics in a short process cycle time at a further increased film-forming rate, a silicon-based thin film formed by the method, and a photovoltaic element comprising the silicon-based thin film with excellent characteristics, adhesion, and resistance to the environments.

Method of forming silicon-based thin film, silicon-based thin film, and photovoltaic element

A deposited film forming apparatus has a power applying electrode disposed above a flat plate type base member grounded, in a vacuum chamber, and a power source for supplying a power to the power applying electrode, the deposited film forming apparatus being constructed to supply the power from the power source to the power applying electrode so as to generate a plasma in a discharge space between the power applying electrode and a substrate disposed in opposition to the power applying electrode in the vacuum chamber and serving as an electrode in a pair with the power applying electrode, thereby decomposing a source gas introduced into the vacuum chamber to form a deposited film on the substrate, wherein the power applying electrode is fixed to the base member with the power applying electrode being isolated from the base member.

Deposited film forming apparatus and deposited film forming method

A two-layer structured electric power application electrode including a non-split electrode consisting of a single planar plate and six split electrodes arranged on the non-split electrode so as to be electrically in contact with the non-split electrode is arranged on the upper side of a discharge chamber provided within a vacuum container such that the power application electrode faces a strip substrate in parallel. The split electrodes are arranged in such a manner as to form a planar plane, and the distance between the surfaces of the split electrodes facing the strip substrate and the strip substrate is uniform. The total area of the surfaces of the split electrodes facing the strip substrate is the same as the area of the non-split electrode on which the split electrodes are mounted. This improves the uniformity in plasma generated in the apparatus for forming a deposited film and enables cutting-down of the costs required to form deposited films.

Apparatus and method for forming deposited film

In a discharge space, a substrate and a cathode are disposed a distance d (cm) apart from each other, and gas containing one or more silicon compounds and hydrogen are introduced into the discharge space, and a product Pd of a film forming pressure P (Pa) and d, and a hydrogen flow rate M (SLM) are set so as to meet a relation: 80M&plus;200&lE;Pd&lE;160M&plus;333, and an RF power is applied to generate a plasma and a non-monocrystal silicon thin film is formed on the substrate in the discharge space. Thereby, there is provided a thin film formation method making it possible to form an amorphous silicon film in which both a uniform film forming rate of a film distribution facilitating an implementation of a large area and a high conversion efficiency can be obtained while achieving an increase in the film forming rate.

Thin film formation method

A deposited film forming apparatus has a vacuum chamber containing a power applying electrode spaced above a grounded flat plate base member. The power applying electrode is fixed to the base member with a plurality of electrically insulating fastening members, at positions effective to suppress deformation of the power applying electrode, wherein an electrically insulating spacer is placed between the power supplying electrode and the base member to electrically insulate said power applying electrode from the base member.

Growing community of inventors

Kyoto, Japan

Takahiro Yajima