Matsushita Electric Industrial Co., Ltd.

International Superconductivity Technology Center

The Tokyo Electric Power Company, Incorporated

Kyocera Corporation

The Furukawa Electric Co., Ltd.

Central Research Institute of Electric Power Industry

Wakamoto Pharmaceutical Co., Ltd.

Ube Industries, Inc.

Kabushiki Kaisha Kobe Seiko Sho

Mitsubishi Metal Corporation

Tohoku Electric Power Company, Inc.

Mitsubushi Metal Corporation

Matsuhita Electric Co., Ltd.

Takahiro Wada

Mikihiko Nishitani

Takayuki Negami

Naoki Kohara

Ryoichi Yamamoto

Shoji Tanaka

Shigemi Kohiki

Nobuo Suzuki

Shoichi Ishihara

Hidekazu Suzuki

Seikoh Yoshida

Masaharu Terauchi

Yasuhiro Hashimoto

Naoki Koshizuka

Takeshi Sakurai

Hisao Yamauchi

Fumiko Yokotani

Ataru Ichinose

Takayuki Miyatake

Hironari Takehara

Satoshi Yamazaki

Shigeo Hayashi

Kazuyuki Hamada

Yoshihiro Matsuo

Makoto Maeda

Shinichi Koriyama

Seiji Adachi

Hiroshi Yoneno

Toshihiro Mihara

Touru Oguma

Masanobu Takeuchi

Shin-ichi Koriyama

Yoshikazu Naito

Yuji Yaegashi

Mitsusuke Ikeda

Yoneno Hiroshi

Kaei Nagoshi

Noriko Tahira

Reiko Hirata

Masanobu Kirita

The present invention has an object to provide an antibacterial aqueous pharmaceutical composition and an aqueous pharmaceutical composition which have a sufficiently low gelation temperature even when new quinolone antibacterial agents such as ofloxacin as the active ingredient and can be retained at the administration site for a long time by virtue of rapid viscosity increase after administration in spite of their being liquid at administration and thereby attain high availability of pharmaceutical agent. The present invention relates to an antibacterial aqueous pharmaceutical composition

Aqueous pharmaceutical compositions

GaN-based FET has a sapphire substrate of about 50 nm thick on which an n-type GaN electron transit layer and an AlGaoN electron supply layer are formed, together with n-type GaN contact regions sandwiching the electron transit and supply layers therebetween. On the entire faces of these layer and regions is formed a polyimide interlayer insulating film of about 3000 nm thick that is formed with contact holes in which source, drain and gate electrodes are formed, each of which is comprised of a TaSi/Au layer and about 5000 nm in thickness. The source and drain electrodes are ohmic-connected to the n-type GaN contact regions and the gate electrode is in contact with an SiOgate insulating film.

Field effect transistor and manufacturing method therefor

The present invention provides a semiconductor device as an FET integrated object having a small effective area, a small ON resistance during operation, a high voltage resistance, and capable of large-current drive. This device comprises one or more FET's each having a gate electrode, a source electrode, and a drain electrode, and arranged side by side on a single plane to constitute a first block which is stacked on a second block having a configuration identical to the first block, wherein the gate electrode, the source electrode, and the drain electrode of the FET(s) of the first block are directly joined with the gate electrode, the source electrode, and the drain electrode of the FET(s) of the second block, respectively.

Semiconductor device and GaN-based field effect transistor for use in the same

The method and the apparatus of manufacturing the I-III-VI.sub.2 type chalcopyrite semiconductor thin films of the present invention control the film composition easily and improve the reproducibility of films by monitoring the composition of the films during forming the films. The apparatus comprise the substrate holder and heater which are in the vacuum chamber and Mo-coated glass substrate on which Cu(In,Ga)Se.sub.2 films are deposited. The change of the substrate temperature is monitored by the use of a heating element to heat the substrate by releasing a certain quantity of heat, a mechanism of measuring a temperature of the heated substrate. The change of power supplied is monitored by the use of a power source for the heating element to keep the substrate at a certain temperature and a mechanism of monitoring the change of the power supplied to the heating element. The changes in substrate temperature or power supplied can be correlated to the film composition.

Method and apparatus for manufacturing chalcopyrite semiconductor thin

O/W emulsion composition for eye drops

A semiconductor thin film comprises an n-type compound semiconductor layer including at least one element from each of groups Ib, IIIb, VIb and II. A solar cell using this semiconductor thin film comprises a substrate and a rear electrode, a p-type compound semiconductor layer, an n-type compound semiconductor layer, an n-type semiconductor layer, a window layer, and a transparent conductive film, formed in this order on the substrate. The n-type compound semiconductor layer including at least one element from each of groups Ib, IIIb, VIb and II has a high carrier density.

Semiconductor thin film, method for manufacturing the same, and solar

A solar cell utilizing a chalcopyrite semiconductor and reducing the density of defects on the junction interface of pn junctions is provided. This solar cell includes a substrate, a back electrode formed on the substrate, a p-type chalcopyrite semiconductor thin film formed on the back electrode, an n-type semiconductor thin film formed so as to constitute a pn junction with the p-type chalcopyrite semiconductor thin film, and a transparent electrode formed on the n-type semiconductor thin film. A material having a higher resistivity than the p-type chalcopyrite semiconductor is formed between the p-type chalcopyrite semiconductor thin film and the n-type semiconductor thin film. A thin film made of this material may be formed by deposition from a solution. For example, CuInS.sub.2 is formed on the surface of a p-type chalcopyrite based semiconductor such as CuInSe.sub.2 by contacting the surface of the semiconductor with a solution in which a salt containing group IIIb elements, an organic substance containing group VIb elements and acid are mixed.

Solar cell and method for manufacturing the same

A thin film solar cell having high conversion efficiency is provided. The band gap of the thin film solar cell can be controlled while keeping the quality superior to conventional solar cells. The absorber layer for photovoltaic energy conversion is a Cu(In.sub.1-X Ga.sub.X)(Se.sub.1-Y S.sub.Y).sub.2 based solid solution where X and Y are in the range of the following Equation:

Thin film solar cell and method for manufacturing the same

A precursor for manufacturing a semiconductor thin film in which an oxide thin film comprising at least one element as a dopant, selected from a group which consists of Groups IA, IIA, IIB, VA, and VB elements, and Groups IB and IIIA elements which are main components of the semiconductor thin film are deposited on a substrate, or a precursor for manufacturing a semiconductor thin film which is formed by depositing a thin film of oxide comprising the Groups IB and IIIA elements on the substrate wherein the content of at least one of the Groups IB and IIIA elements is varied in the direction of film thickness, and a method for manufacturing a semiconductor thin film comprising the step of heat treating the precursor for manufacturing the semiconductor thin film in an atmosphere containing a Group VIA element. The present invention provides a precursor for manufacturing a semiconductor thin film and a method for manufacturing the semiconductor thin film using the precursor which are suitable for manufacturing a semiconductor thin film having a chalcopyrite structure that has a high and uniform energy conversion efficiency when the semiconductor thin film is used as a photoabsorptive layer of a solar cell.

Precursor for semiconductor thin films and method for producing

An apparatus for manufacturing an ABC.sub.2 chalcopyrite film (wherein A represents Cu or Ag, B represents In, Ga or Al, C represents S, Se or Te) includes a substrate holder, a substrate heater, a supply source for supplying elements A, B or C onto the substrate and for controlling the supply process, and a monitor for monitoring an electrical or optical property of the thin film layer deposited on the substrate. The electrical or optical property of the thin film layer abruptly changes at a first time point when the A/B ratio in the thin film layer changes from an element A-excessive state to the stoichiometric composition ratio of the ABC.sub.2. The electrical or optical property of the thin film layer demonstrates a stable value at a second time point when the A/B ratio becomes an element-B excessive state. Deposition is terminated at the second time point.

Apparatus for manufacturing chalcopyrite film

A method for manufacturing an ABC.sub.2 chalcopyrite film (wherein A represents Cu or Ag, B represents In, Ga or Al, C represents S, Se or Te) comprises; a first step of forming a film of a composition of ABC.sub.2 containing element A in excess; a second step of exposing the film formed in the first step to a flux or gas containing element B and C, or to a gas or flux containing element A, B and C but containing element B in excess; and monitoring an electrical or optical property of the film in order to determine an end point of the second step where the electrical or optical property of the film demonstrates a specific change.

Method for manufacturing chalcopyrite film

A chalcopyrite compound, for instance, CuInS.sub.2 or CuInSe.sub.2, is prepared by subjecting a thin film containing copper metal, indium metal, and an indium compound or a compound which contains both indium and copper, selected from the group consisting of oxides, sulfides and selenides, with heat under a reducing atmosphere containing at least one of the Group VIb element or under an atmosphere containing a reducing compound of at least one of the Group VIb element, thereby converting said thin film into a chalcopyrite compound.

Process for producing chalcopyrite type compound thin film

Chalcopyrite compound semiconductor thin films represented by I-III-VI.sub.2-x V.sub.x or I-III-VI.sub.2-x VII.sub.x, and semiconductor devices having a I-III-VI.sub.2 /I-III-VI.sub.2-x V.sub.x or I-III-VI.sub.2 /I-III-VI.sub.2-x VII.sub.x chalcopyrite homojunction are provided. Such chalcopyrite compound semiconductor thin films are produced by radiating molecular beams or ion beams of the I, III, VI, and V or VII group elements simultaneously, or by doping I-III-VI.sub.2 chalcopyrite thin films with VII-group atoms after the formation thereof. Pollution-free solar cells are also provided, which are formed by the steps of forming a structure of a lower electrode, a chalcopyrite semiconductor thin film, and an upper electrode and radiating accelerated ion beams of a V, VII, or VIII group element thereto.

Compound semiconductor, a method for producing a thin film thereof, and

A solar cell includes a compound semiconductor, which is a laminated film having compound semiconductor layers, and low melting point glass. When the solar cell is heated by fire, the low melting point glass melts to seal the compound semiconductor so that toxic substances contained in the compound semiconductor are not released into the air.

Solar cell containing low melting point glass layer

Growing community of inventors

Katano, Japan

Takahiro Wada