Nitto-denko Corporation

Jx Nippon Mining Metals Corporation

Jx Advanced Metals Corporation

Takahiro Uchida

Shiro Tsukamoto

Kazuhiro Ikemura

Shinya Akizuki

Koichi Takemoto

Takuya Eto

Toru Imori

Eiji Toyoda

Hisataka Ito

Hiroshi Noro

Tomohiro Fukuda

Tsutomu Nishioka

Katsumi Shimada

Keisuke Yoshikawa

Tsuyoshi Ishizaka

Hideaki Fukuyo

Takeshi Okada

Kei Toyota

Masatomi Murakami

Takamitsu Oota

In the present invention, a high-purity metallic tin suitable for use in an EUV exposure device is provided through use of an oxidation-resistant metallic tin, the oxidation-resistant metallic tin containing 99.995 mass % or more of tin, and unavoidable impurities, and the thickness of an oxide film being 2.0 nm or less when the surface of a cut face of the oxidation-resistant metallic tin is measured by AES.

Oxidation-resistant metallic tin

Provided is a high-purity tin product that does not contain undesirable carbonaceous impurities as a result of the following: a vacuum-packed high-purity metal article (vacuum-packed high-purity tin article) is obtained by vacuum packaging a high-purity metal (high-purity tin), at least a portion of a surface of a high-purity metal being covered with a fluorocarbon resin sheet; and the vacuum-packed high-purity metal article(vacuum-packed high-purity tin article) is obtained by vacuum packaging, with a vacuum packaging film, the high-purity metal in which at least a portion of a surface is covered with the fluorocarbon resin sheet.

Method for vacuum packing high-purity tin and vacuum-packed high purity tin

The present invention relates to a process for producing a resin composition for an optical semiconductor from a powdery material and a liquid material using a kneader having a first supply port and a secondary supply port disposed at a downstream side of the first supply port, the process including: a step of supplying the powdery material into the kneader from the first supply port and delivering the powdery material to a second supply port side by the kneader at a temperature at which the powdery material is not melted; a step of melting the powdery material by heating and simultaneously supplying the liquid material from the second supply port under a pressure higher than a pressure in the kneader to knead a melted product of the powdery material and the liquid material; and a step of further kneading a kneaded product thereof while cooling.

Process for producing resin composition for optical semiconductor

The present invention relates to an epoxy resin composition for an optical semiconductor device, including the following ingredients (A) to (E): (A) an epoxy resin; (B) an acid anhydride curing agent; (C) a curing accelerator; (D) a specific silicone resin; and (E) a specific alcohol compound.

Epoxy resin composition for optical semiconductor device and optical semiconductor device using the same

A method for producing an epoxy resin composition for semiconductor encapsulation, which does not cause void generation and the like and is excellent in reliability. A method for producing an epoxy resin composition for semiconductor encapsulation, which contains the following components (A) to (C): (A) an epoxy resin, (B) a phenol resin, and (C) a hardening accelerator, which comprises mixing the whole or a part of the components excluding the component (A) among the components containing the components (A) to (C) in advance under a reduced pressure of from 1.333 to 66.65 kPa and under a heating condition of from 100 to 230&#xb0; C., and then mixing the component (A) and remaining components with the resulting mixture.

Method for producing epoxy resin composition for semiconductor encapsulation and epoxy resin composition for semiconductor encapsulation and semiconductor device obtained thereby

An epoxy resin composition for semiconductor encapsulation capable of giving semiconductor devices of high reliability that do not cause short circuits even in pitch reduction in the interconnection electrode distance or the conductor wire distance therein as well as a semiconductor device using the same. The epoxy resin composition for semiconductor encapsulation, which comprises the following components (A) to (C): (A) an epoxy resin, (B) a phenolic resin, and (C) an inorganic filler for preventing semiconductors from short-circuiting in a step of semiconductor encapsulation.

Epoxy resin composition for semiconductor encapsulation, and semiconductor device using the same

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Ibaraki, Japan

Takahiro Uchida