Semiconductor Energy Laboratory Co., Ltd.

Takahiro Tuji

Junichiro Sakata

Masashi Tsubuku

Masahiko Hayakawa

Miyuki Hosoba

Koichiro Kamata

Shuhei Yoshitomi

Hiroyuki Tomatsu

Kiyoshi Kato

Shuhei Nagatsuka

Hiroki Inoue

Tsutomu Murakawa

Kaori Ikada

One object of the present invention is to provide a regulator circuit with an improved noise margin. In a regulator circuit including a bias circuit generating a reference voltage on the basis of the potential difference between a first power supply terminal and a second power supply terminal, and a voltage regulator outputting a potential to an output terminal on the basis of a reference potential input from the bias circuit, a bypass capacitor is provided between a power supply terminal and a node to which a gate of a transistor included in the bias circuit is connected.

Regulator circuit and RFID tag including the same in wireless communication to improve noise margin

It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.

Manufacturing method of semiconductor device

The problem of damage on an antenna or a circuit (electrostatic breakdown) due to discharge of electric charge accumulated in an insulator is solved; and the problem of NAKANUKE failure is solved. A pair of conductive layers, a pair of insulators provided between the pair of conductive layers, and a chip which is provided between the pair of insulators and includes an antenna, an analog circuit, and a digital circuit are provided, in which an opening is provided for at least one of the pair of conductive layers, and the opening is provided at a position which overlaps at least the analog circuit.

Semiconductor device

Growing community of inventors

Kanagawa, Japan

Takahiro Tuji