National Institute of Information and Communications Technology, Incorporated

Tokyo University of Agriculture and Technology

Takahiro Tsukamoto

Toshiaki Matsui

Yoshiyuki Suda

Nobumitsu Hirose

Katsumi Okubo

Kyohei Degura

Takuma Yagi

Akira Motohashi

Akifumi Kasamatsu

A semiconductor laminate film includes a silicon substrate and a semiconductor layer formed on the silicon substrate and containing silicon and germanium. The semiconductor layer having a surface roughness Rms of 1 nm or less. Further, the semiconductor layer satisfies the following relationship t≤0.881×xwhere t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer. Also, the semiconductor layer being a mixed crystal semiconductor layer containing silicon and germanium.

Manufacturing method for semiconductor laminated film, and semiconductor laminated film

A method of producing a semiconductor laminate film includes forming a semiconductor layer containing silicon and germanium on a silicon substrate by a sputtering method. In the sputtering method, a film formation temperature of the semiconductor layer is less than 500&#xb0; C., and a film formation pressure of the semiconductor layer ranges from 1 mTorr to 11 mTorr, or, a film formation temperature of the semiconductor layer is less than 600&#xb0; C., and a film formation pressure of the semiconductor layer is equal to or more than 2 mTorr and less than 5 mTorr. The sputtering method uses a sputtering gas having a volume ratio of a hydrogen gas of less than 0.1%, and the semiconductor layer satisfies a relationship of t&#x2264;0.881&#xd7;x, where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer.

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Fuchu, Japan

Takahiro Tsukamoto