Semiconductor Energy Laboratory Co., Ltd.

Other

Sharp Kabushiki Kaisha Corporation

Takahiro Tsuji

Toshimitsu Konuma

Shunpei Yamazaki

Kunihiko Suzuki

Akira Sugawara

Junichiro Sakata

Hidekazu Miyairi

Masashi Tsubuku

Masahiko Hayakawa

Koji Kusunoki

Miyuki Hosoba

Teruaki Ochiai

Shuhei Yoshitomi

Kouji Moriya

Hiroyuki Tomatsu

Takeshi Nishi

Yoshitaka Yamamoto

Masahiro Adachi

Kiyoshi Ogishima

Koji Moriya

Kiyoshi Kato

Shuhei Nagatsuka

Hiroki Inoue

Koichiro Kamata

Tsutomu Murakawa

Kaori Ikada

An object is to provide a high reliability thin film transistor using an oxide semiconductor layer which has stable electric characteristics. In the thin film transistor in which an oxide semiconductor layer is used, the amount of change in threshold voltage of the thin film transistor before and after a BT test is made to be 2 V or less, preferably 1.5 V or less, more preferably 1 V or less, whereby the semiconductor device which has high reliability and stable electric characteristics can be manufactured. In particular, in a display device which is one embodiment of the semiconductor device, a malfunction such as display unevenness due to change in threshold voltage can be reduced.

Semiconductor device and method for manufacturing the same

It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.

Manufacturing method of semiconductor device

An object is to provide a highly reliable transistor and a semiconductor device including the transistor. A semiconductor device including a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; and a source electrode and a drain electrode over the oxide semiconductor film, in which activation energy of the oxide semiconductor film obtained from temperature dependence of a current (on-state current) flowing between the source electrode and the drain electrode when a voltage greater than or equal to a threshold voltage is applied to the gate electrode is greater than or equal to 0 meV and less than or equal to 25 meV, is provided.

Semiconductor device

One object of the present invention is to provide a regulator circuit with an improved noise margin. In a regulator circuit including a bias circuit generating a reference voltage on the basis of the potential difference between a first power supply terminal and a second power supply terminal, and a voltage regulator outputting a potential to an output terminal on the basis of a reference potential input from the bias circuit, a bypass capacitor is provided between a power supply terminal and a node to which a gate of a transistor included in the bias circuit is connected.

Regulator circuit and RFID tag including the same

An object is to provide a measuring method with high reproducibility in a bias-temperature stress test of a transistor in which an oxide semiconductor is used for a semiconductor layer. Provided is a measuring method of a transistor, which includes the steps of disposing a transistor in which an oxide semiconductor is used for a semiconductor layer in a measurement room having a light-blocking property, introducing dry air, nitrogen, or argon into the measurement room, and applying a predetermined voltage to a gate electrode of the transistor in the measurement room kept under an atmosphere where the dew point is greater than or equal to &#x2212;110&#xb0; C. and less than or equal to &#x2212;60&#xb0; C., whereby the amount of change in threshold voltage over time is measured.

Method for measuring transistor

One object is to provide a method for manufacturing a display device in which shift of the threshold voltage of a thin film transistor including an oxide semiconductor layer can be suppressed even when ultraviolet light irradiation is performed in the process for manufacturing the display device. In the method for manufacturing a display device, ultraviolet light irradiation is performed at least once, a thin film transistor including an oxide semiconductor layer is used for a switching element, and heat treatment for repairing damage to the oxide semiconductor layer caused by the ultraviolet light irradiation is performed after all the steps of ultraviolet light irradiation are completed.

Method for manufacturing display device

Growing community of inventors

Atsugi, Japan

Takahiro Tsuji