Renesas Electronics Corporation

Takahiro Tomimatsu

Takeshi Kamino

Takeshi Kawamura

Koji Iizuka

An offset spacer film (OSS) is formed on a side wall surface of a gate electrode (NLGE, PLGE) to cover a region in which a photo diode (PD) is disposed. Next, an extension region (LNLD, LPLD) is formed using the offset spacer film and the like as an implantation mask. Next, process is provided to remove the offset spacer film covering the region in which the photo diode is disposed. Next, a sidewall insulating film (SWI) is formed on the side wall surface of the gate electrode. Next, a source-drain region (HPDF, LPDF, HNDF, LNDF) is formed using the sidewall insulating film and the like as an implantation mask.

Method for manufacturing image capturing device and image capturing device

An imaging device is provided, in which the dynamic range of still pictures can be suppressed from being decreased. In the imaging device, a photodiode including an n-type impurity region and a photodiode including an n-type impurity region are formed in a p-type well. An n-type impurity region is formed between the n-type impurity region on one side and that on the other side so as to contact each of the two. The impurity concentration of the last-formed n-type impurity region is set to be lower than those of the first-formed n-type impurity regions.

Imaging device and manufacturing method thereof

A gate electrode of a field effect transistor is formed. Next, an offset spacer film with a double-layer structure including a silicon oxide film as a lower-layer film and a silicon nitride film as an upper-layer film is formed on a sidewall surface of the gate electrode. The silicon nitride film serves as a supply source of an element for terminating dangling bonds of silicon in a device formation region. Next, treatment for leaving the offset spacer film intact or treatment for removing the silicon nitride film of the offset spacer film is performed. Thereafter, a sidewall insulating film is formed on the sidewall surface of the gate electrode.

Method for manufacturing imaging apparatus, and imaging apparatus

To prevent deterioration in the sensitivity of a pixel part caused by variation in the distance between a waveguide and a photo diode and by decay of light due to suppression of reflection of entering light. In a pixel region, there is formed a waveguide which penetrates through a fourth interlayer insulating film or the like and reaches a sidewall insulating film. The sidewall insulating film is configured to have a stacked structure of a silicon oxide film and a silicon nitride film. The waveguide is formed so as to penetrate through even the silicon nitride film of the sidewall insulating film and to reach the silicon oxide film of the sidewall insulating film, or so as to reach the silicon nitride film of the sidewall.

Image pickup device and method of manufacturing the same

Over a semiconductor substrate, a gate insulating film including an interfacial layer, a HfON film, and a HfSiON film is formed. Then, over the HfSiON film, an Al-containing film and a mask layer are formed. Subsequently, the mask layer and the Al-containing film are selectively removed from an n-channel MISFET formation region. Then, a rare-earth-element-containing film is formed over the HfSiON film in the n-channel MISFET formation region and over the mask layer in a p-channel MISFET formation region. Heat treatment is performed to cause a reaction between each of the HfON film and the HfSiON film and the rare-earth-element-containing film in the n-channel MISFET formation region and cause a reaction between each of the HfON film and the HfSiON film and the Al-containing film in the p-channel MISFET formation region. Thereafter, the unreacted rare-earth-element-containing film and the mask layer are removed, and then metal gate electrodes are formed.

Growing community of inventors

Kawasaki, Japan

Takahiro Tomimatsu