Sumitomo Electric Industries, Limited

International Superconductivity Technology Center

Takahiro Taneda

Tatsuoki Nagaishi

Kazuya Ohmatsu

Kotaro Ohki

Genki Honda

Kei Hanafusa

Koso Fujino

Tsuyoshi Nakanishi

A thin film superconducting wire with a copper plating thin film produced on a surface of a laminated structure is inferior in bending properties to a thin film superconducting wire having no copper plating thin film. Therefore, a thin film superconducting wire according to the present invention is a thin film superconducting wire including a laminated structure having a substrate, a buffer layer located on one of main surfaces of the substrate, and a superconducting layer located on a main surface of the buffer layer opposite to a main surface facing the substrate. The thin film superconducting wire further includes a copper plating thin film covering an outer periphery of the laminated structure, a residual stress within the copper plating thin film serving as a compression stress. The laminated structure may have a sputtered silver layer. A silver covering layer covering the outer periphery of the laminated structure may be further provided between the copper plating thin film and the laminated structure.

Thin film superconducting wire and superconducting cable conductor

A superconducting thin film material exhibiting excellent superconducting properties and a method of manufacturing the same are provided. A superconducting thin film material includes a substrate, and a superconducting film formed on the substrate. The superconducting film includes an MOD layer formed by an MOD process, and a gas-phase-formed layer formed on the MOD layer by a gas-phase process. Since the MOD layer is formed first and then the gas-phase-formed layer is formed in this manner, degradation of the properties of the gas-phase-formed layer due to heat treatment in the step of forming the MOD layer (heat treatment in the MOD process) can be prevented.

Superconducting thin film material and method of manufacturing same

A method of making a film having a uniform thickness and having a crystal axis parallel to a main surface of a substrate is described. In a deposition method, a film is formed by scattering a deposition material from a target () surface and growing the scattered deposition material on a main surface () of a substrate (). The method includes the steps of positioning the substrate () into a first state where the distance between one end () and the target () is small and the distance between the other end () and the target material () is relatively large, forming a first film () on the substrate () in the first state, positioning the substrate () into a second state where the distance between one end () and the target () is large and the distance between the other end () and the target () is small, and. forming a second film () on the first film () in the second state.

Deposition methods and stacked film formed thereby

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Osaka, Japan

Takahiro Taneda