Anelva Corporation

Showa Denko K.k.

Mitsubishi Chemical Engineering Corporation

Mitsubishi Jidosha Kogyo Kabushiki Kaisha

Sony Olympus Medical Solutions Inc.

Lg Energy Solution Nanjing Co., Ltd.

Takahiro Tamura

Chiaki Sotowa

Junro Sakai

Shuichi Imai

Tatsuya Nakanishi

Takamasa Mikami

Yotaro Nishijima

Nanri Fang

Hisataka Takeda

Yuan Tang

Kaori Kudou

A medical control apparatus includes a circuitry configured to: generate an irradiation image represented by illuminating-light irradiation, based on a brightness distribution of a captured image captured by an imaging device; and control generation of a projection image and projection of the projection image onto a subject by an image projector provided in an optical member based on the irradiation image and a rotation angle for rotation of the optical member rotatably coupled to the imaging device about a longitudinal axis of the optical member relative to the imaging device.

Medical control apparatus and medical observation system

Provided are a treatment apparatus and a treatment method treating a waste cleaning liquid discharged from a process of producing an electrode of a lithium-ion secondary battery, in which a liquid component and a solid component are efficiently separated from each other, and the liquid component can be sufficiently collected and subjected to volume reduction treatment. The treatment apparatus includes: a stirring tank stirring the waste cleaning liquid; a liquid feed line that takes out the waste cleaning liquid from the stirring tank; and a thin film evaporator evaporating a cleaning liquid in the waste cleaning liquid to separate the solid component. Then, in the treatment method, the waste cleaning liquid is stirred in the stirring tank, the waste cleaning liquid is supplied to the thin film evaporator in a state in which the solid component is diffused, and the cleaning liquid in the waste cleaning liquid is evaporated.

Treatment apparatus for waste cleaning liquid and treatment method for waste cleaning liquid

Shift knob for vehicle

A distillation apparatus is capable of regenerating spent NMP from an on-site process for lithium ion battery electrodes. The distillation apparatus has a raw material tank, a side-cut distillation column, and a product tank. The distillation column has a top portion where a liquid to be treated is separated into a high-concentration NMP and water containing light-boiling components, a bottom portion where refluxed liquid in the distillation column is further distilled to separate the refluxed liquid into a high-purity NMP and the high-concentration NMP containing high-boiling components, and a mid-stage portion from which the high-purity NMP is withdrawn as side-cut vapor. The distillation column has, at a rear stage, a condenser for condensing the high-purity NMP withdrawn as the side-cut vapor, and a flow controller for regulating an amount of a liquid of the high-purity NMP withdrawn from the condenser to the product tank.

Distillation apparatus for NMP

An anode active material for use in a lithium secondary battery including a mixture of graphite I that has, according to X-ray powder diffraction, dof not smaller than 0.3354 nm and not greater than 0.337 nm, Lc(004) of smaller than 100 nm, La(110) of not smaller than 100 nm, and a half width of the peak of a plane (101) at a diffraction angle (2&#x3b8;) of 44 degrees to 45 degrees of not smaller than 0.65 degree and another graphite so as to have, according to X-ray powder diffraction, dof not smaller than 0.3354 nm and not greater than 0.337 nm, Lc(004) of not smaller than 80 nm, La(110) of not smaller than 100 nm, and a half width of the peak of a plane (101) at a diffraction angle (2&#x3b8;) of 44 degrees to 45 degrees of not smaller than 0.5 degree.

Anode active material for use in lithium secondary battery

By a method that includes coking a residue resulting from distillation of crude oil under reduced pressure and having API gravity of 1 to 5, an asphaltene content of 10 to 50%, a resin content of 5 to 30%, and a sulfur content of 1 to 12% to obtain coke, pulverizing the coke to obtain a carbon powder, and heating the carbon powder at 1000 to 3500 deg C., a graphite anode active material for use in a lithium secondary battery is obtained that has, in X-ray powder diffraction, dof not smaller than 0.3354 nm and not greater than 0.337 nm, Lc(004) of smaller than 100 nm, La(110) of not smaller than 100 nm, and a half width of the peak of a plane (101) at a diffraction angle (2&#x3b8;) of 44 degrees to 45 degrees of not smaller than 0.65 degree.

Graphite anode active material for use in lithium secondary battery

In a vacuum processing system used in a semiconductor device manufacturing process, a plate-shaped placement area protector made of a dielectric material having a surface of dimensions and shape matching those of a surface of a substrate or an area for substrate placement in a surface of a substrate stage in place of the substrate. An etching gas is introduced into a vacuum vessel by a gas introduction mechanism and predetermined high-frequency electromagnetic wave power is applied to the substrate stage from a stage high-frequency electromagnetic wave power source. Plasma is formed in the proximity of the surface of the substrate stage by the applied high-frequency electromagnetic wave power, and a deposited film on the surface of the substrate stage is removed with the plasma. The placement area protector has the same electrical properties as the deposited film.

Plasma cleaning method and placement area protector used in the method

An electrostatic chucking mechanism including an electrode body, a dielectric block placed on the front of the electrode body and having a dielectric portion to be dielectrically polarized for electrostatically chucking an object to be chucked, and an intermediate layer placed between the electrode body and the dielectric block. The intermediate layer is formed of a metal such as indium having extendibility for absorbing thermal deformation of the electrode body or the dielectric block and is heated and pressurized, thereby joining the electrode body and the dielectric block. A thin film of indium, chrome, or the like, is prepared on the junction face of the dielectric block, enhancing a junction force and adhesion by the intermediate layer.

Electrostatic chucking mechanism

A system for processing a substrate with plasma. In the system, a substrate holder includes an energy application member for energizing an exposure face other than a substrate placement portion. The energy application member energizes the exposure face by an induced current when high-frequency electromagnetic wave power is applied, by heat generated upon energization, or by ion bombardment when a high-frequency electric field is applied. Perfluorocarbon 14 gas and oxygen gas introduced by a gas introduction mechanism form plasma by a power supply mechanism for etching and removing a thin film deposited on the exposure face. At this time, the etching is accelerated by energy given by the energy application member.

Plasma processing system

A plasma treatment device for forming a high-quality thin film with fewer surface flaws and etching by preventing the generation of fine powders from deposited films in a film-forming chamber, by means of plasma treatment using gaseous starting materials. The plasma treatment chamber device includes a plasma generation chamber 11, a power-supplying mechanism for supplying power to this chamber, a film-forming chamber 113 to be spatially connected to the plasma generation chamber 11, a magnetic field generation mechanism 14 provided around this film-forming chamber for forming a multicusp magnetic field therein, an evacuation mechanism for evacuating the chamber, a first gas-supplying mechanism 16 for supplying gaseous starting materials and a second gas-supplying mechanism 17 for supplying gaseous materials for forming films. An inner wall surface 113b of the film-forming chamber is located in an area having a multicusp magnetic field with an intensity of from 50 to 200 G. Alternatively, instead of the inner wall surface 113b, a member 61 formed a nonmagnetic material can be located within the film-forming chamber.

Plasma treatment device

A thin film deposition apparatus forms a thin film onto substrates by use of a plasma gas and a material gas. In this apparatus, generation of particles in a deposition chamber can be reduced and hence a high quality thin film with fewer surface defects can be formed. The apparatus comprises a bell jar, a power-supply unit for supplying electric power to the bell jar, a deposition chamber, a vacuum pumping unit for evacuating the deposition chamber, a first gas introduction unit for introducing a gas used for generating plasma, and a second gas introduction unit for introducing a material gas used for forming the thin film, and further a blocking member for preventing either or both of the material gas and the plasma from entering a space between a gas supply end-portion of the second introduction unit and an interior surface of the deposition chamber. The blocking member is shaped to have relatively large curvature.

Growing community of inventors

Tokyo, Japan

Takahiro Tamura