Matsushita Electric Industrial Co., Ltd.

Takahiro Takisawa

Isamu Aokura

Hitoshi Yamanishi

Yuichiro Yamada

Masahide Yokoyama

Toshiyuki Suemitsu

Hiroshi Tanabe

Toshimichi Ishida

Generated heat is effectively dissipated to prevent thermal deformation of a gas ejector plate in a plasma processing apparatus which is capable of processing a substrate of large scale. A temperature controlling plate 106 and heat conductor 109 are fixedly disposed on the upper electrode-cum-gas ejector plate 105 which is provided with a multiplicity of gas ejecting apertures 105a disposed at regular intervals. The heat conductor 109 is constructed to be a latticed member for effectively conducting heat from the gas ejector plate 105 to the temperature controlling plate 106, and has a plurality of gas pressure equalizing spaces 109a defined between crossing bars of the lattice for pressuring process gas to be evenly ejected through the gas ejecting apertures 105a.

Plasma processing apparatus

A sputtering apparatus uses a plurality of rectangular targets to form a thin film on a substrate, and includes a plurality of magnets disposed along both side edges of each target in such a manner that the polarities of adjacent magnets along the side edges of the targets are opposite, and polarities of the magnets confronting each other across the targets are opposite. The surfaces of at least two targets are inclined to a surface of the substrate at an angle not smaller than 30.degree. and not larger than 60.degree..

Sputtering apparatus and method

A magnetron sputtering electrode assembly which is used in a sputtering system having a rectangular flat-plate target, includes permanent magnets arranged along the longitudinal edges of the target to pass lines of magnetic forces in parallel to the surface of the rectangular flat-plate target, and a driving device for reversing polarity of the magnets to change by 180 degrees the direction of the lines of magnetic force caused by the permanent magnets passing in parallel to the surface of the rectangular flat-plate target.

Sputtering electrode

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Moriguchi, Japan

Takahiro Takisawa