Fujitsu Semiconductor Limited

Fujitsu Corporation

Takahiro Tabira

Noriyoshi Shimizu

Nobuyuki Ohtsuka

Yoshiyuki Nakao

Masaki Haneda

Michie Sunayama

A semiconductor device includes a semiconductor substrate, an oxygen-containing insulating film disposed above the above-described semiconductor substrate, a concave portion disposed in the above-described insulating film, a copper-containing first film disposed on an inner wall of the above-described concave portion, a copper-containing second film disposed above the above-described first film and filled in the above-described concave portion, and a manganese-containing oxide layer disposed between the above-described first film and the above-described second film. Furthermore, a copper interconnection is formed on the above-described structure by an electroplating method and, subsequently, a short-time heat treatment is conducted at a temperature of 80&#xb0; C. to 120&#xb0; C.

Semiconductor device and method for manufacturing the same

Method of manufacturing a multilayer interconnection structure in a semiconductor device

A semiconductor device includes an insulating film including oxygen formed over a semiconductor substrate, a recess formed in the insulating film, a refractory metal film formed on the inner wall of the recess, a metal film including copper, manganese, and nitrogen formed on the refractory metal film, and a copper film formed on the metal film to fill in the recess.

Semiconductor device with reduced increase in copper film resistance

Growing community of inventors

Kawasaki, Japan

Takahiro Tabira