Toyoda Gosei Co., Ltd.

Takahiro Sonoyama

Tohru Oka

Toru Oka

Nariaki Tanaka

Kazuya Hasegawa

Noriaki Murakami

Kiyotaka Mizukami

Junya Nishii

A semiconductor device comprises: a gate insulating filmstacked on a semiconductor layer; and a gate electrode layerstacked on the gate insulating filmand provided to apply a voltage via the gate insulating filmfor formation of a channel in the semiconductor layer. The gate insulating filmincludes: a first insulation filmstacked on the semiconductor layer; and a second insulation filmbetween the first insulation filmand the gate electrode layer. When &#x3b5;and &#x3b5;respectively represent relative permittivities of the first and second insulation film, d[nm] and d[nm] represent film thicknesses of the first and second insulation film, and Vmax [V] represents a rated voltage applicable to the gate electrode layer, the semiconductor device is configured to satisfy &#x3b5;and meet (C1): 

Semiconductor device

A semiconductor device includes a substrate, a semiconductor layer that is formed on the substrate and includes a pn junction or a hetero-junction, an insulating film that is formed on the semiconductor layer to be in contact with an end of the pn junction or an end of the hetero-junction, and an electrode formed on the semiconductor layer. The insulating film includes an insulating layer that is mainly made of negatively charged microcrystal.

Semiconductor device including insulating film that includes negatively charged microcrystal

The present invention provides a MIS-type semiconductor device having a ZrONgate insulating film in which threshold voltage shift is suppressed, thereby achieving stable operation. In the MIS-type semiconductor device having a gate insulating film on the semiconductor layer and a gate electrode on the gate insulating film, with a gate applied voltage of 5 V or more, the gate insulating film is formed of ZrON(x and y satisfy the relation: x&#x3e;0, y&#x3e;0, 0.8&#x2266;y/x&#x2266;10, and 0.8&#x2266;0.59x+y&#x2266;1.0). The MIS-type semiconductor device having such a gate insulating film can perform stable operation because there is no shift in the threshold voltage even if a high voltage is applied to the gate electrode.

MIS-type semiconductor device

A semiconductor device comprises: a semiconductor layer; and an insulating film that is formed on the semiconductor layer. The insulating film includes an insulating layer that is mainly made of negatively charged microcrystal.

Semiconductor device including an insulating layer which includes negatively charged microcrystal

A semiconductor device comprises: a gate insulating filmstacked on a semiconductor layer; and a gate electrode layerstacked on the gate insulating filmand provided to apply a voltage via the gate insulating filmfor formation of a channel in the semiconductor layer. The gate insulating filmincludes: a first insulation filmstacked on the semiconductor layer; and a second insulation filmbetween the first insulation filmand the gate electrode layer. When &#x2208;and &#x2208;respectively represent relative permittivities of the first and second insulation film, d[nm] and d[nm] represent film thicknesses of the first and second insulation film, and Vmax [V] represents a rated voltage applicable to the gate electrode layer, the semiconductor device is configured to satisfy &#x2208;and meet (C1): 

A manufacturing method of MIS (Metal Insulator Semiconductor)-type semiconductor device includes the steps of: forming a zirconium oxynitride (ZrON) layer; forming an electrode layer containing titanium nitride (TiN) on the zirconium oxynitride (ZrON) layer; and heating the electrode layer.

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Kiyosu, Japan

Takahiro Sonoyama