Canon Kabushiki Kaisha

Eneos Corporation

Takahiro Shirai

Daisuke Yoshida

Katsuhito Sakurai

Hideo Kobayashi

Fumihiro Inui

Kohichi Nakamura

Yoshiaki Takada

Takashi Suzuki

Noriyuki Kiuchi

Kazuhiko Muto

Takashi Maeda

Hiroshi Kawachi

Mitsuo Karakane

Tetsuya Itano

Nobuyuki Hirayama

Shinichi Yamashita

Hirofumi Totsuka

Yasushi Matsuno

Takamasa Sakuragi

Kei Ochiai

Yasushi Iwakura

So Hasegawa

Yuuichirou Hatano

Tsunenori Yoshinari

Tsuneori Yoshinari

Provided is a synthetic graphite material, in which a size L (112) of a crystallite in a c-axis direction as calculated from a (112) diffraction line obtained by an X-ray wide angle diffraction method is in a range of 4 to 30 nm, a surface area based on a volume as calculated by a laser diffraction type particle size distribution measuring device is in a range of 0.22 to 1.70 m/cm, an oil absorption is in a range of 67 to 147 mL/100 g, and a half width Δvof a peak present in a wavelength range of 1580 cm±100 cmis in a range of 19 to 24 cmin Raman spectrum analysis using argon ion laser light having a wavelength of 514.5 nm.

Synthetic graphite material, synthetic graphite material production method, negative electrode for lithium ion secondary battery, and lithium ion secondary battery

A synthetic graphite material, in which a size L () of a crystallite in a c-axis direction as calculated from a () diffraction line obtained by an X-ray wide angle diffraction method is in a range of 4 to 30 nm, a surface area based on a volume as calculated by a laser diffraction type particle size distribution measuring device is in a range of 0.22 to 1.70 m/cm, an oil absorption is in a range of 67 to 147 mL/100 g, a spectrum derived from carbon appearing in an electron spin resonance method as measured using an X band is in a range of 3200 to 3410 gauss, and ΔHpp, which is a line width of the spectrum as calculated from a first derivative spectrum of the spectrum at a temperature of 4.8K, is in a range of 41 to 69 gauss.

An imaging device includes a first transmission line connected to a plurality of bit memories, a plurality of second bit memories disposed outside the memory area, and connected to the first transmission line, and each are configured to hold a digital signal of one bit that is one of different bits among a plurality of bits, a second transmission line connected to a part of the plurality of second bit memories, and a third transmission line connected to another part of the plurality of second bit memories.

Imaging device, imaging system, and moving body

A semiconductor apparatus includes a stack of first and second chips each having a plurality of pixel circuits arranged in a matrix form. The pixel circuit of the a-th row and the e1-th column is connected to the electric circuit of the p-th row and the v-th column. The pixel circuit of the a-th row and the f1-th column is connected to the electric circuit of the q-th row and the v-th column. The pixel circuit of the a-th row and the g1-th column is connected to the electric circuit of the r-th row and the v-th column. The pixel circuit of the a-th row and the h1-th column is connected to the electric circuit of the s-th row and the v-th column.

Semiconductor apparatus and equipment

Photoelectric conversion device includes semiconductor chip including first semiconductor region, second semiconductor region arranged on the first semiconductor region, and third semiconductor region arranged on the second semiconductor region. Chip end face of the semiconductor chip is formed by the first semiconductor region, the second semiconductor region and the third semiconductor region. The first semiconductor region is of first conductivity type and the second semiconductor region is of second conductivity type. The third semiconductor region includes photoelectric conversion region, readout circuit region, and peripheral region. The peripheral region includes isolation region and outer periphery region arranged between the chip end face and the isolation region. The isolation region is of the second conductivity type and the outer periphery region is of the first conductivity type.

Photoelectric conversion device, substrate, and system with semiconductor regions

Provided is an analog-to-digital (AD) conversion device including: a comparator configured to compare an input analog signal and a reference signal; a plurality of first bit-memories configured to hold a digital signal including a plurality of bits generated based on a result of comparison performed by the comparator, each of the plurality of first bit-memories holding a bit signal of a corresponding one bit among the plurality of bits of the digital signal; an output circuit to which the bit signal output from each of the plurality of first bit-memories is commonly input; a transmission line configured to transmit the bit signal output from the output circuit; and a first scanning circuit configured to sequentially select, from the plurality of first bit-memories, a first bit-memory that outputs the bit signal to the output circuit.

AD conversion device, imaging device, imaging system, and mobile apparatus

An imaging sensor includes a pixel, an amplifier, and a successive approximation analog-to-digital (AD) converter. The pixel is configured to output a pixel signal. The amplifier is configured to output an amplification signal obtained by amplifying the pixel signal. The successive approximation AD converter detects whether or not the amplification signal is within a predetermined signal range.

Imaging sensor, chip, imaging system, and moving body

An imaging apparatus includes a plurality of pixels, a plurality of signal lines, and a plurality of comparators. The imaging apparatus further includes a first switch and a second switch. The first switch includes a first terminal configured to receive signal from one of the signal lines is input, and a second terminal connected to an input node of one of the comparators. The second switch includes a first terminal connected to the input node of the one comparator, and a second terminal to which a signal from another one of the signal lines is input.

Imaging apparatus, imaging system, moving body, and semiconductor substrate for lamination

An image capturing apparatus includes a plurality of pixels arranged on a substrate, a temperature signal output unit arranged on the substrate and configured to output a temperature signal representing a temperature, and a reference signal output unit arranged on the substrate and configured to output a reference signal used to correct the temperature signal. The temperature signal output unit and the reference signal output unit are arranged in regions different from each other on the substrate.

Image capturing apparatus, image capturing system, and movable apparatus

A spread spectrum clock generation circuit includes a generation unit configured to generate and output a spread spectrum clock based on an input reference clock, a monitoring unit configured to monitor a difference between the number of pulses of a reference clock input to the generation unit after a reference time and the number of pulses of a spread spectrum clock output from the generation unit after the reference time, and a control unit configured to control a frequency of a spread spectrum clock to be generated by the generation unit so as to make the difference fall within a predetermined range.

Spread spectrum clock generation circuit, clock transfer circuit, integrated circuit, and image reading apparatus

When clamping a signal from a solid state image sensor, float of an optical black pixel output due to incoming of infrared light avoids a malfunction of a clamp from occurring. When clamping a signal from the solid state image sensor, the difference between the optical black pixel output and a clamp target level is output as a difference output, the difference output is compared with a comparison level to integrate the number of times larger than the comparison level every horizontal line. When the number of times is equal to or more than a certain rate (&#x2154;) from the number of optical black pixels on the horizontal line, an optical black float state is determined and clamping operation is performed in accordance with a held value immediately before.

Growing community of inventors

Isehara, Japan

Takahiro Shirai