Hitachi Automotive Systems, Ltd.

Hitachi, Ltd.

The Furukawa Electric Co., Ltd.

Hitachi Astemo Ltd.

Hitachi Car Engineering Co., Ltd.

Takahiro Shimura

Yusuke Takagi

Akira Matsushita

Shinichi Fujino

Yujiro Kaneko

Tokihito Suwa

Masami Ikeda

Takeshi Tokuyama

Yasuo Saito

Yosei Hara

Masahiko Soshino

Kinya Nakatsu

Toshiya Satoh

Masaaki Yamamoto

Kenji Miyata

Toshifumi Usui

Toshiaki Nakamura

Hisashi Tanie

Eisuke Wayama

Shiro Yamashita

Shigeru Tokumoto

Yoshikatsu Hashimoto

Hiromi Shimazu

Kouji Sasaki

Yoshinori Fukasaku

Hidefumi Iwaki

Hideto Yoshinari

Kenji Ono

Masanori Kubota

Masato Higuma

Shinji Hiramitsu

Yoshikazu Tsuzuki

Hitoshi Andoh

Yuzo Nakajima

Takashi Kume

Hisao Enomoto

Toshifumi Sagawa

Hisashi Yukita

Tatsuya Minami

Takashi Kuboki

Kenjo Ono

Takekazu Ootsuka

Chikako Satake

Masashi Banse

Shun Kawano

Hidefumi Hatsuzawa

An object of the present invention is to provide a power semiconductor device capable of improving seismic resistance while suppressing a decrease in assembly efficiency. According to the present invention, a power semiconductor deviceincludes an element installation conductorincluding a first conductor portionthat is made of metal and is used for installing a power semiconductor element, a second conductor portionthat is made of metal and forms one or more main terminalsfor transmitting a current to the power semiconductor element, and one or more control terminalsfor transmitting a switching control signal to the power semiconductor element, and a third conductor portionthat is made of metal and is provided at a tip portion of the control terminal. In the power semiconductor device, the element installation conductoris formed so that the thickness of the thickest portion of the second conductor portionis thinner than the thickness of the first conductor portion, and the thickness of the thickest portion of the third conductor portionis thinner than the thickness of the thinnest portion of the second conductor portion

Power semiconductor device with an element installation conductor

A semiconductor module includes a first power semiconductor element having a first surface and a second surface. The semiconductor module also includes a second power semiconductor element having a first surface and a second surface. The semiconductor module also includes first, second, third, and fourth conductor plates, and a connecting part. The connecting part is integrally formed with the second conductor plate, extends toward the third conductor plate, and is connected to the third conductor plate.

Power semiconductor device and power conversion device

The present invention is directed to improving the bonding strength between a bonding wire and a lead frame bonded to a plurality of semiconductor devices electrically connected in parallel. One end and the other end of a first bonding wire are connected to a control electrode and a first lead frame portion or a bent portion of a first semiconductor device, and one end and the other end of a second bonding wire are connected to a control electrode and a second lead frame portion of a second semiconductor device. The first lead frame portion extends in a direction overlapping with the first semiconductor device from the bent portion toward the side opposite to the first semiconductor device side, and the second lead frame portion extends from the bent portion toward the second semiconductor device side in a direction overlapping with the second semiconductor device.

Power semiconductor module

A power semiconductor device includes a first power semiconductor element, a second power semiconductor element, a first conductor plate, a second conductor plate, a third conductor plate, and a fourth conductor plate. The power semiconductor device also includes a DC positive terminal, a DC negative terminal, an AC terminal, and a sealing member that integrally seals the first conductor plate, the second conductor plate, the third conductor plate, and the fourth conductor plate. Each of the DC positive terminal, the DC negative terminal, and the AC terminal has a cut section formed by cutting a tie bar that integrally couples the DC positive terminal, the DC negative terminal, and the AC terminal.

A heat storage material composition, at least containing at least one organic compound selected from ethanol, ethylene glycol, propylene glycol, and acetic acid, sodium acetate, and water, wherein a content of the water is 72.4 to 100 parts by mass, relative to 100 parts by mass of the sodium acetate; an auxiliary heat source and a heat supply method, using the heat storage material composition.

Heat source material composition, and auxiliary heat source and heat supply method using the same

The present invention aims to suppress a coolant from bypassing a non-cooling unit without lowering the productivity. The power converter according to the present invention includes: a power semiconductor module; and a flow path forming body having a flow path in which the power semiconductor module is disposed and an opening which is connected with the flow path, wherein the power semiconductor module includes a first fin formed on one surface and a second fin formed on another surface which faces the one surface so as to sandwich the semiconductor element, the flow path forming body has a first coolant control unit and a second coolant control unit which are arranged so as to sandwich the first fin, the first coolant control unit and the second coolant control unit are formed to be overlapped with a region of the power semiconductor module where the first fin is not formed, and a first flow path is formed along the first coolant control unit and the second coolant control unit.

Power converter

An object of the present invention is to provide a power semiconductor module that can secure a satisfactory cooling without expanding the size of a case component. In the power semiconductor module according to the present invention, a frame case includes a front surface, a back surface, and a pair of side surfaces and formed with an opening part in at least one of the front surface and the back surface. A metal base is inserted into the opening part of the frame case. A frame case is provided with a joining part FW to which the peripheral part of the metal base and the peripheral part of the opening part of the frame case are joined. A first concaved part and a second concaved part are formed respectively in each of a pair of side surfaces of the frame case. Each of the concaved parts is prolonged toward an inner side of the frame case from the side surfaces, and includes a bottom surface formed facing the joining part FW side in an intermediate position of the thickness direction of each of the side surfaces.

Power semiconductor module and manufacturing method of power semiconductor module

A power semiconductor device includes a plurality of power semiconductor elements constituting upper and lower arms of an inverter circuit, a first sealing member sealing the plurality of power semiconductor elements, a positive electrode-side terminal and a negative electrode-side terminal each connected with any of the plurality of power semiconductor elements and protruding from the first sealing member, a second sealing member sealing at least a part of the positive electrode-side terminal and at least a part of the negative electrode-side terminal, and a case in which the power semiconductor elements sealed with the first sealing member are housed.

An object of the present invention is to achieve both low height and miniaturization of a double side cooling type electric power conversion device. A power semiconductor module according to the present invention includes: a circuit body including a power semiconductor device and a terminal; and a case forming an accommodation space for accommodating the circuit body, wherein the case includes: a first heat radiation portion and a second heat radiation portion disposed to face each other sandwiching the accommodation space; a first opening that is disposed at a side portion to the first heat radiation portion and through which the terminal passes; a sealing surface formed to surround the first opening; and a reference surface disposed at a side portion to the second heat radiation portion, and the reference surface is formed on a surface opposite to a surface on which the sealing surface of the case is disposed such that, when projection is performed from a vertical direction of the reference surface, a projection of the reference surface and a projection of the sealing surface overlap each other.

Power semiconductor module and electric power conversion device

Size reduction of a power conversion device is intended. A power conversion device according to the present invention includes: a first power semiconductor module; a second semiconductor module; and a fixing member which fixes the first power semiconductor module, wherein the first power semiconductor module has a first power semiconductor device, a first case which houses the first power semiconductor device, and a first flange portion connected to the case, the second power semiconductor module has a second power semiconductor device, and a second case which houses the second power semiconductor device, the second case is connected to the first flange portion so as to provide a first flow path space for allowing a coolant to flow between the second case and the first case, and the first flange portion is fixed to the fixing member while supporting the first case and the second power semiconductor module.

Power conversion device

A power module includes a base plate, first, second, and third semiconductor chips. At least one of a third edge or fourth edge of the first semiconductor chip is disposed adjacent to a side end of the base plate. Among a half of a distance from a first edge of the first semiconductor chip to one edge of the second semiconductor chip, a half of a distance from a second edge of the first semiconductor chip to one edge of the third semiconductor chip, and a distance from the third edge or fourth edge of the first semiconductor chip disposed adjacent to the side end of the base plate to the side end of the base plate, a length of a solder fillet formed on the edge of the first semiconductor chip at the shortest distance is formed in the shortest length.

Power module

An object of the present invention is to provide a power module having high reliability. The power module according to the present invention, includes a circuit body and a case housing the circuit body. The case has a first case member including a first base plate and a second case member including a second base plate. The first case member has a first side wall portion formed in an arrangement direction of the first base plate and the second base plate. The second case member has a second side wall portion formed in the arrangement direction, the second side wall portion coupling to the first side wall portion. The first side wall portion and the second side wall portion are formed so as to have the sum of lengths of the first side wall portion and the second side wall portion in the arrangement direction smaller than the thickness of the circuit body. The first case member has a deforming portion smaller than the first base plate and the second base plate in rigidity.

Provided are a battery temperature regulation system capable of efficiently heating and/or cooling a battery, and a battery temperature regulation unit suitable for use in the battery temperature regulation system. The battery temperature regulation systemis provided with a thermally conductive member (e.g., a heat pipe) thermally connected to a battery, a heating device (e.g., a heater) that heats the batteryvia the thermally conductive member and/or a cooling device (e.g., an air conditioning apparatus) that cools the batteryvia the thermally conductive member.

Battery temperature regulation system and battery temperature regulation unit

Power module for power inverter

Each of a plurality of power semiconductor module includes a can-type cooling case that is formed with a plate spring portion that generates compressive stress in the semiconductor circuit unit, an adjustment portion that is deformed to adjust elastic deformation of the plate spring portion, and a sidewall portion to which the plate spring portion and the adjustment portion are joined.

Growing community of inventors

Hitachinaka, Japan

Takahiro Shimura