Hitachi-high-technologies Corporation

Nippon Sheet Glass Company, Limited

Hitachi, Ltd.

Matsushita Electric Industrial Co., Ltd.

Takahiro Shimomura

Kazuo Yamada

Takao Arase

Go Saito

Ken Yoshioka

Motohiko Yoshigai

Kenji Maeda

Masamichi Sakaguchi

Hiroaki Ishimura

Hiromichi Kawasaki

Kyoichi Shukuri

Shinichi Nishimoto

Yutaka Kudo

Susumu Tauchi

Yoshifumi Ogawa

Ryoichi Isomura

Satoshi Kanki

Toshiaki Nishida

Komei Kato

Kenshu Ando

Atsuya Kanno

Ian Mackley

An operating ratio is improved in a vacuum processing apparatus to which a plurality of vacuum transfer chambers are connected through a vacuum transfer intermediate chamber. In a method of operating the vacuum processing apparatus having the plurality of vacuum transfer chambers connected through the vacuum transfer intermediate chamber and a plurality of vacuum processing vessels connected to the vacuum transfer chambers, respectively, the plurality of vacuum transfer chambers are made to communicate through the vacuum transfer intermediate chamber, a purge gas is supplied to the vacuum transfer chamber connected to a lock chamber in the plurality of vacuum transfer chambers, an inside of the transfer chamber of the vacuum transfer chamber which is far from the lock chamber is decompressed/exhausted, and pressures in all the transfer chambers of the plurality of vacuum transfer chambers are raised to be higher than the pressure in the vacuum processing vessel.

Vacuum processing apparatus and operating method thereof

A plasma processing apparatus is offered which has evacuable vacuum vessel, processing chamber disposed inside the vacuum vessel and having inside space in which plasma for processing sample to be processed is generated and in which the sample is placed, unit for supplying gas for plasma generation into processing chamber, vacuum evacuation unit for evacuating inside of processing chamber, helical resonator configured of helical resonance coil disposed outside the vacuum vessel and electrically grounded shield disposed outside the coil, RF power supply of variable frequency for supplying RF electric power in given range to the resonance coil, and frequency matching device capable of adjusting frequency of the RF power supply so as to minimize reflected RF power. The resonance coil has electrical length that is set to integral multiple of one wavelength at given frequency. The helical resonance coil has feeding point connected to ground potential using variable capacitive device.

Plasma processing apparatus and plasma processing method

A vacuum processing apparatus includes a row of containers of vacuum transfer chambers connected to each other behind a lock chamber, a wafer being transferred through depressurized inside of the row of the containers of the vacuum transfer containers, an intermediate chamber disposed between the containers of the vacuum transfer chambers, a plurality of processing units including processing containers respectively connected to left or right side walls of the containers of the vacuum transfer chambers and the wafer is processed therein, and a bypass chamber which constitutes a bypass path connecting the processing units, where only either the wafer which is being transferred from the lock chamber toward one of the processing units or the wafer which was processed in one of the processing units and is being transferred toward the lock chamber is transferred through the containers of the vacuum transfer chambers.

Vacuum processing apparatus and operating method of the same

A bent glass sheet shaping method which is capable of reducing occurrence of visibility distortions and a bent glass sheet with reduced visibility distortions. A glass sheet is heated to a shapeable temperature, a cover material is mounted onto a press die such that a direction of waves in the cover material is diagonal to a direction of distortions in the glass sheet, and the heated glass sheet with the press die is pressed.

Bent glass sheet shaping method

A ceramic paste is applied to a first glass sheet, and a ceramic paste is applied to a second glass sheetwith a lower solar absorptivity than that of the first glass sheet. In this case, the amount per unit area of the ceramic paste to be applied to the first glass sheetis allowed to be smaller than that of the ceramic paste to be applied to the second glass sheet. Alternatively, a first ceramic paste and a second ceramic paste are allowed to have different compositions from each other. The first glass sheetand the second glass sheetare bent so that the surfaces onto which the ceramic pastes have been applied are shaped as concave surfaces. The applied ceramic paste is fired using the heating used for bending. Thus maskingsandare formed. The first glass sheetand the second glass sheetare bonded to each other, with a resin interlayer filmbeing interposed therebetween.

Method of manufacturing laminated glass for vehicle and laminated glass for vehicle

A method for manufacturing semiconductor devices includes a step of etching a sample including an interlayer insulating layer containing AlOand a polysilicon or SiOlayer in contact with the interlayer insulating layer using a plasma etching system. The interlayer insulating layer is etched with a gas mixture containing BCl, Ar, and CHor He. The gas mixture further contains Cl. The interlayer insulating layer is etched in such a manner that a time-modulated high-frequency bias voltage is applied to the sample. The interlayer insulating layer is etched in such a manner that the sample is maintained at a temperature of 100&#xb0; C. to 200&#xb0; C. The interlayer insulating layer and the polysilicon or SiOlayer are separately etched in different chambers.

Method for manufacturing semiconductor devices

A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.

Plasma processing method for working the surface of semiconductor devices

A tempered glass sheet having a sufficient strength needed for a windowpane and can be utilized for smoothing a surface of the window is provided. A tempered glass sheet of the present invention, produced by tempering a glass sheet, has a stepped portion of reduced thickness relative to the thickness of the glass sheet in at least a part of a peripheral portion of the tempered glass sheet. By the stepped portion, a thin portion and a thick portion are formed. A difference in thickness between the thin portion and the thick portion is 0.5 mm or more, and the thickness of the thin portion is thicker than half the thickness of the thick portion.

Tempered glass sheet for vehicle and vehicle window

The present invention provides a glass sheet having a hole for attachment of the sheet to a vehicle body. The hole includes a through hole and a thin part in contact with the through hole. A bolt is fitted so that the head of the bolt is fitted in the thin part.

Glass sheet and glass window for vehicles

A bent glass sheet for a vehicle window of the present invention has a roughened region for eliminating distortion of transmitted light through the bent glass sheet. The bent glass sheet comprises a main surface surrounded by an edge of the bent glass sheet and the main surface has a smooth transparent region. The main surface also has the roughened region that covers at least a portion of a peripheral region of the main surface and in the portion of the peripheral area the roughened region extends at least 3 mm from the edge of the bent glass sheet. The roughened region covers an area in which the transmitted light are distorted. Therefore, the discomfort of passengers due to distortion of transmitted light is relieved.

Growing community of inventors

Kudamatsu, Japan

Takahiro Shimomura