Kabushiki Kaisha Toyota Chuo Kenkyusho

Takahiro Shiga

Yasunori Taga

Takeshi Morikawa

Takeshi Ohwaki

Ryoji Asahi

A Ti&mdash;O&mdash;N film is formed on an SiO substrate by sputtering. For example, TiO is used as a target and nitrogen gas is introduced into the atmosphere. Crystallization is carried out by a post-sputtering heat treatment. Then a charge separation material such as Pt is supported on the Ti&mdash;O&mdash;N film. With the fabricated TiO crystals, the Ti&mdash;O&mdash;N film containing nitrogen exhibits a good catalytic reaction by using visible light as acting light. Since the charge separation material captures electrons or positive holes, recombination of electrons and positive holes is effectively prevented, and consequently more efficient photocatalytic reaction is performed. It is preferable to form a photocatalyst material film (Ti&mdash;Cr&mdash;O&mdash;N film) by sputtering the SiO substrate by use of TiO and Cr as the target in a nitrogen atmosphere. Crystallization is performed by a post-sputtering heat treatment.

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Aichi, Japan

Takahiro Shiga