Sharp Kabushiki Kaisha Corporation

Takahiro Shibiuya

Takashi Nakano

Kazuya Ishihara

Shinobu Yamazaki

Yasunari Hosoi

Yushi Inoue

Tetsuya Ohnishi

A manufacturing method for a variable resistive element according to which a stable switching operation can be achieved with excellent reproducibility is provided. A conductive thin film is deposited on a semiconductor substrate and patterned to a predetermined form, and after that, a first interlayer insulating film is deposited. An opening is then created in a predetermined location on the first interlayer insulating film in such a manner that the upper surface of the conductive thin film is exposed and the thickness of the conductive thin film formed at the bottom of this opening is reduced through processing, and after that, an oxidation process is carried out on the periphery of the exposed conductive thin film. As a result, a variable resistor film is formed in the peripheral region of the opening, and this variable resistor film divides the conductive thin film into a first electrode and a second electrode.

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Fukuyama, Japan

Takahiro Shibiuya