Sumitomo Chemical Company, Limited

Takahiro Seike

Giovanni Ferrara

To improve detectivity of a photoelectric conversion element (). A photoelectric conversion element including a pair of electrodes (), an active layer () provided between the pair of electrodes, and an intermediate layer () provided between the active layer and at least one of the pair of electrodes, in which the intermediate layer has a surface that is in contact with the active layer, the surface having a surface roughness having an absolute value greater than 0.22 nm but smaller than 1.90 nm, and in which the active layer is not less than 350 nm but not more than 800 nm in thickness.

Photoelectric conversion element

This light detecting element has a reduced dark current and improved external quantum efficiency. The light detecting element includes a positive electrode, a negative electrode, and an active layer that is provided between said positive electrode and said negative electrode, and that contains a p-type semiconductor material and an n-type semiconductor material. The thickness of the active layer is at least 800 nm. The value obtained by subtracting the absolute value of the LUMO of the n-type semiconductor material from the work function of the surface in contact with the negative electrode side surface of the active layer is 0.0 to 0.5 eV. The absolute value of the LUMO of the n-type semiconductor material is 2.0 to 10.0 eV.

Light detecting element

This light detecting element has a simple configuration, and is highly sensitive to a prescribed wavelength region. The light detecting element comprises a positive electrode, a negative electrode, and an active layer that is provided between the positive electrode and the negative electrode, and that includes a p-type semiconductor material and n-type semiconductor material. The thickness of the active layer is at least 800 nm. The weight ratio between the p-type semiconductor material and the n-type semiconductor material included in the active layer (p/n ratio) is at most 99/1. The work function of the negative electrode side surface in contact with the active layer is lower than the absolute value of the LUMO energy level of the n-type semiconductor material.

A composition which comprises a conjugated polymer, a fullerene derivative, a first solvent, and a second solvent. When the sum of the weight of the first solvent and the weight of the second solvent is taken as 100, the weight of the first solvent is 70-97. The first solvent at 25&#xb0; C. has a surface tension exceeding 25 mN/m, and the second solvent at 25&#xb0; C. has a surface tension of 15-25 mN/m.

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Tsukuba, Japan

Takahiro Seike