Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Panasonic Intellectual Property Corporation of America

Skyworks Panasonic Filter Solutions Japan Co., Ltd.

Matsushita Electric Industrial Co., Ltd.

Takahiro Sato

Masahiro Hikita

Mitsuaki Oshima

Tsutomu Mukai

Manabu Yanagihara

Masaru Yamaoka

Yoichi Ikeda

Mamoru Shoji

Ikuo Fuchigami

Yosuke Matsushita

Shohji Ohtsubo

Tadanori Tezuka

Hiroto Yamagiwa

Hideyuki Okita

Yasumori Hino

Yuu Okada

Hidehito Shimizu

Akihiko Nishio

Hiroshi Ueda

Hiroyuki Nakamura

Motoshi Ito

Katsuya Watanabe

Yasuhiro Uemoto

Hironori Nakae

Hidenori Takeda

Takashi Inoue

Rei Goto

Tetsuya Tsurunari

Takahiro Nagai

Takashi Yumiba

Takeshi Shimamoto

Yuuichi Kuze

Yusuke Kinoshita

Masayuki Kuroda

Hiroshi Kutsumi

Hiroaki Ueno

Takuto Yamazaki

Tatsuro Nishi

Toru Jibu

Ayanori Ikoshi

Masanori Ohnishi

Shoji Okamoto

Hiroshige Ishibashi

Yasuhiro Tai

Yoshiyuki Hashimoto

Yasue Chihara

Hirokuni Hagita

Keiichi Matsunaga

Takuma Iwasa

Kenichi Morikawa

A semiconductor device includes third active regions that connect two finger-end portions of field effect transistors (FETs) spaced apart from each other, and includes, above the third active regions, portions of a third nitride semiconductor layer that includes P-type impurities.

High voltage nitride semiconductor device

A semiconductor device includes: a substrate; a first nitride semiconductor layer above the substrate; a second nitride semiconductor layer above the first nitride semiconductor layer and being greater than the first nitride semiconductor layer in band gap; and a first field-effect transistor including a first source electrode, a first drain electrode, and a first gate electrode that are above the second nitride semiconductor layer, the first source electrode and the first drain electrode being separated from each other, the first gate electrode being disposed between the first source electrode and the first drain electrode. The first field-effect transistor includes a third semiconductor layer that is above the second nitride semiconductor layer in part of a region between lower part of the first source electrode and the first gate electrode, and is separated from the first gate electrode. The third semiconductor layer and the first source electrode are electrically connected.

Semiconductor device

A semiconductor device includes: a substrate; a first nitride semiconductor layer on the substrate; a second nitride semiconductor layer on the first nitride semiconductor layer; finger-shaped source electrodes on the second nitride semiconductor layer; finger-shaped drain electrodes disposed so as to be spaced apart from the source electrodes; and finger-shaped gate electrodes respectively disposed between the source electrodes and the drain electrodes. The gate electrodes are electrically connected, via a first gate integrated wiring, a plurality of second gate integrated wirings and a third gate integrated wiring, to gate pads located on one or both ends of the third gate integrated wiring. A plurality of source pads and the plurality of second gate integrated wirings are formed alternately in a first direction perpendicular to the longitudinal direction of the gate electrodes.

Semiconductor device and semiconductor component including the same

The semiconductor device includes: a semiconductor substrate; a first transistor disposed above the semiconductor substrate and including a first source electrode, a first gate region, and a first drain electrode; and a second transistor disposed above the semiconductor substrate and including a second source electrode, a second gate region, and a second drain electrode. The first source electrode, the second gate region, and the second source electrode are substantially at an identical potential. The first drain electrode and the second drain electrode are substantially at an identical potential.

Semiconductor device including electrodes with identical potential

An integrated semiconductor device includes an Si substrate, and a high-side transistor and a low-side transistor which configure a half-bridge. A source electrode of a unit transistor configuring the high-side transistor and a drain electrode of a unit transistor configuring the low-side transistor are integrated as a common electrode.

Integrated semiconductor device

A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer; a second nitride semiconductor layer having a greater band gap than the first nitride semiconductor layer; a source electrode and a drain electrode on the second nitride semiconductor layer apart from each other; a third nitride semiconductor layer, between the source electrode and the drain electrode, containing a p-type first impurity and serving as a gate; and a fourth nitride semiconductor layer, between the third nitride semiconductor layer and the drain electrode, containing a p-type second impurity, wherein the average carrier concentration of the fourth nitride semiconductor layer is lower than the average carrier concentration of the third nitride semiconductor layer.

Nitride semiconductor device and method for manufacturing same

A semiconductor device includes a substrate; a semiconductor layer; a first protective film; a first adhesive layer disposed on the first protective film; an electrode pad disposed on the first protective film; a second protective film disposed to cover and be in contact with the electrode pad and the first adhesive layer; and a first opening formed in part of the second protective film such that the upper surface of the electrode pad is exposed, wherein in a plan view, the first adhesive layer includes a first projection projecting from the electrode pad radially in a direction of the periphery of the electrode pad and continuously surrounding the periphery of the electrode pad; and the second protective film is continuously to cover and contact part of the upper and side surfaces of the electrode pad, the upper and side surfaces of first projection, and the first protective film.

A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer () located over the substrate; a second nitride semiconductor layer () located over the first nitride semiconductor layer (), having a larger band gap than the first nitride semiconductor layer (), and having a recess () penetrating into the first nitride semiconductor layer (); and a third nitride semiconductor layer () continuously covering the second nitride semiconductor layer () and the recess (), and having a larger band gap than the first nitride semiconductor layer (); a gate electrode () located above a portion of the third nitride semiconductor layer () over the recess (); and a first ohmic electrode () and a second ohmic electrode () located on opposite sides of the gate electrode ().

A communication device including an image capturing device having a RF-ID unit for performing proximity wireless communication with a RF-ID reader/writer connected via an infrared communication path to a TV. The image capturing device includes: an antenna for the proximity wireless communication; a data receiving unit receiving an input signal from the RF-ID reader/writer; a nonvolatile second memory storing at least UID and an execution program; and a data transmission unit transmitting the UID and the execution program to the RF-ID reader/writer via the antenna according to the input signal. The UID is used to identify the communication device, and the execution program is executed by the TV with reference to the UID. The transmitted UID and execution program are transferred to the TV via the RF-ID reader/writer.

Communication device, communication system, image presentation method, and program

A semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer above the first nitride semiconductor layer and having a band gap larger than that of the first nitride semiconductor layer; a p-type nitride semiconductor layer above the second nitride semiconductor layer; two third nitride semiconductor layers of n-type above the second nitride semiconductor layer and located separately on either side of the p-type nitride semiconductor layer; and a first ohmic electrode above one of the two third nitride semiconductor layers and a second ohmic electrode above the other of the two third nitride semiconductor layers; and a gate electrode above the p-type nitride semiconductor layer. The second nitride semiconductor layer includes, in a region above which neither the p-type nitride semiconductor layer nor the two third nitride semiconductor layers is located, a surface layer including p-type impurities identical to those in the p-type nitride semiconductor layer.

Semiconductor device and method of manufacturing semiconductor device

A communication device, which can simplify various setting processes, transmits, to a server via a network, external device information received from an external device by using proximity wireless communication. The communication device includes: an antenna for the proximity wireless communication with the external device; a proximity wireless communication unit communicating with the external device via the antenna to receive the external device information from the external device; an external device storage unit storing the external device information received by the proximity wireless communication unit; a registration information generation unit generating registration information to be registered in a database in the server based on (a) the external device information stored in the external device storage unit and (b) communication device information including communication device identification information for identifying the communication device; and a server communication unit transmitting registration information to the server via the network.

Communication device that receives external device information from an external device using near field communication

The present invention is an acoustic wave device including first and second acoustic wave resonators. A first tilt angle that is an angle formed between a direction perpendicular to a direction in which electrode fingers of the first acoustic wave resonator extend and a direction along which the electrode fingers are arranged is different from a second tilt angle that is an angle formed between a direction perpendicular to a direction in which electrode fingers of the second acoustic wave resonator extend and a direction along which the electrode fingers are arranged.

Acoustic wave device and antenna duplexer employing the same

In a filter module capable of handling multiple bands, cross wiring with an RF-IC is to be solved. The filter module includes: an antenna terminal; first and second transmission filters; first and second reception filters; a first switch circuit connected to the antenna terminal, and selectively connected to the first and second transmission filters; a second switch circuit connected to the antenna terminal, and selectively connected to the first and second reception filters; a first matching circuit connected between the first switch circuit and the first transmission filter or between the second switch circuit and the first reception filter; and a second matching circuit connected between the first switch circuit and the second transmission filter or between the second switch circuit and the second reception filter.

Filter module

A disc device supplies a disc to each of a plurality of disc drives. The disc device includes a carrier which retains a plurality of discs being stacked in such a stacked state, which separates one disc from the retained plurality of discs above a tray ejected from an arbitrary one of the disc drives, and which places the separated disc on the tray. The carrier includes a plurality of claw portions holding the inner circumferential portion of the bottommost disc out of the plurality of discs, and a disc press pressing the topmost disc out of the plurality of discs so as to be in parallel to the disc placing face of the tray.

Disc device having a carrier for retaining a plurality of discs in a stacked state

Growing community of inventors

Osaka, Japan

Takahiro Sato