Hitachi High-Tech Corporation

Takahiro Sakuragi

Ryoichi Isomura

Keitarou Ogawa

Kohei Sato

Motohiro Tanaka

Tetsuo Kawanabe

In a plasma processing apparatus including a plasma processing chamber disposed in a vacuum chamber, a sample stage disposed in the plasma processing chamber and on which a sample is placed, in the vacuum chamber, a second shower plate disposed above the sample stage, a first shower plate disposed above the second shower plate, and a dielectric window disposed above the first shower plate, first gas is supplied from a first gas supply unit to a space between the dielectric window and the first shower plate, and second gas is supplied from a second gas supply unit to a space between the first shower plate and the second shower plate.

Plasma processing apparatus

According to one embodiment, a vacuum processing device is provided which is capable of being controlled to create the most suitable gas flow under the situation where the device is placed by allowing a plurality of vacuum transfer chambers to communicate with each other via the intermediate chamber in an operation method of the vacuum processing device including the plurality of vacuum transfer chambers connected to each other via the intermediate chamber and a plurality of vacuum processing chambers respectively connected to the vacuum transfer chambers.

Growing community of inventors

Tokyo, Japan

Takahiro Sakuragi