Matsushita Electric Industrial Co., Ltd.

Other

Panasonic Corporation

Sanyo Electric Co., Ltd.

Sumitomo Metal Mining Company, Ltd.

Yamaichi Electronics Co., Ltd.

Takahiro Sakamoto

Takashi Torii

Masayoshi Yano

Noriaki Furuta

Seiji Nakanishi

Toshiyasu Ito

Hidekazu Hiratsuka

Yutaka Kawatate

Shigeru Sato

Seiji Shishikura

Shin Imaizumi

Norihiro Yamamoto

Hideo Sasaoka

Shinji Arimoto

Shinichi Yasuda

An objective of the present invention is to provide a non-aqueous electrolyte secondary battery positive electrode active material formed from a lithium-nickel composite oxide which, while retaining high capacity and a high level of safety, has an excellent cycle characteristic by controlling reaction resistance and a method for producing it. [Solution] A lithium-nickel composite oxide is produced by steps (a) to (c) described below: (a) nickel hydroxide and/or nickel oxyhydroxide in a prescribed composition are sintered in a non-reducing atmosphere having 850&#xb0; C. or lower to give nickel oxide; (b) after the nickel oxide and a lithium compound are mixed in a prescribed molar ratio, the mixture is sintered in an oxygen atmosphere at a temperature of 650 to 850&#xb0; C.; and (c) after an obtained powder is made to be in a prescribed slurry concentration, it is washed with water during a period of time which satisfies the following formula:/40&#x3c;/10wherein A is a time for washing with water presented as a unit of a minute, B is a slurry concentration of the obtained powder presented as a unit of g/L, filtered and dried.

Nickel composite hydroxide particle and process for producing the same, positive electrode active material for non-aqueous electrolyte secondary battery and process for producing the same, and non-aqueous electrolyte secondary battery

A positive electrode active material for a non-aqueous electrolyte secondary battery is provided. The positive electrode active material includes a composite oxide containing lithium and metal M other than lithium, and M contains Ni, Mn, and Co. The molar ratio of Ni to the total of Ni, Mn, and Co is from 0.45 to 0.65, and the molar ratio of Mn to the total of Ni, Mn, and Co is from 0.15 to 0.35. The positive electrode active material has a pressed density under a compression of 60 MPa of 3.3 g/cmor more and 4.3 g/cmor less. The positive electrode active material has a volume resistivity under a compression of 60 MPa of 100 &#x3a9;&#xb7;cm or more and less than 1000 &#x3a9;&#xb7;cm.

Positive electrode active material for non-aqueous electrolyte secondary battery and method for producing the same

A method for producing a lithium-containing transition metal oxide represented by the general formula: Li[Li(NiM)]Owhere M is metal other than Li and Ni, 0&#x2266;x, and 0&#x3c;a. The method includes: (i) mixing a transition metal compound containing Ni and M in a molar ratio of a:(1&#x2212;a) with lithium carbonate in a predetermined ratio; (ii) causing the temperature of the mixture to reach a predetermined temperature range while repeatedly raising and lowering the temperature thereof; and (iii) thereafter reacting the transition metal compound with the lithium carbonate in the predetermined temperature range.

Method for producing lithium-containing transition metal oxide

A memory card includes: a main body of the memory card in which a notched section is formed; a semiconductor memory; and a write/nonwrite setting element for setting the write/nonwrite state of data in the semiconductor memory, the write/nonwrite setting element being slidably fitted in the notched section, wherein the main body of the memory card includes an upper main body and a lower main body; at least one of the upper main body and the lower main body has an elastic guide formed within the notched section; the write/nonwrite setting element slides along the elastic guide so as to set the write/nonwrite state of the data in the semiconductor memory; and the elastic guide has an engagement portion for engagedly stopping the write/nonwrite setting element so as to select the position of the write/nonwrite setting element with respect to the elastic guide.

Memory card

A memory card includes: a main body of the memory card in which a notched section is formed; a semiconductor memory; and a write/nonwrite setting element for setting the write/nonwrite state of data in the semiconductor memory, the write/nonwrite setting element being slidably fitted in the notched section, wherein the main body of the memory card includes an upper main body and ail lower main body; at least one of the upper main body and the lower main body has an elastic guide formed within the notched section the write/nonwrite setting element slides along the elastic guide so as to set the write/nonwrite state of the data in the semiconductor memory; and the elastic guide has an engagement portion for engagedly stopping the write/nonwrite setting element so as to select the position of the write/nonwrite setting element with respect to the elastic guide.

The connector body comprises: side portions to guide side surfaces of the inserted IC card; a bottom portion having a support surface to support a back surface or front surface of the IC card and stepped portions to engage a raised surface portion formed on the back surface so that the raised surface portion can be moved in an IC card insertion/retraction direction X when the back surface of the IC card is supported on the support surface; and a top plate portion to keep the IC card from floating upward. The top plate portion has: a restriction surface to keep the IC card from floating upward; and a receiving groove to movably receive the raised surface portion of the back surface in the IC card insertion/retraction direction when the back surface of the IC card faces the restriction surface.

Card connector

The card connector of this invention has an erroneous insertion prevention mechanism that blocks the IC card at a predetermined blocking position when the IC card is wrongly inserted into the connector body. The erroneous insertion prevention mechanism has a blocking member retractably supported on the first side wall and an urging means to normally urge the blocking member to project inwardly from the second side wall. When the IC card is inserted in a correct orientation, the blocking member is guided by the inclined surface of the IC card to be retracted outwardly from the first side wall. When the IC card is inserted in a wrong orientation, the blocking member abuts against the front end of the IC card, blocking the further insertion of the IC card at the blocking position.

Growing community of inventors

Osaka, Japan

Takahiro Sakamoto